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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1117 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 40V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat)= 1.2V(Max) @IC= 5A *Wide Area of Safe Operation *Complement to Type 2SB850 APPLICATIONS *Designed for audio amplifier, series regulators and general purpose power amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range w w scs .i w VALUE 40 40 7 10 2 50 150 -55~150 UNIT V V .cn mi e V A A PC TJ Tstg W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1117 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 40 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.2 V VB E(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B ICBO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain w w w. sem isc VCB= 40V; IE= 0 VEB= 7V; IC= 0 IC= 2A; VCE= 5V .cn i 60 2.0 V 10 A 10 A 240 isc Websitewww.iscsemi.cn 2 |
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