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ASDL-5880
High Speed Photodiode in Top View Package
Data Sheet
Description
ASDL-5880 is a Silicon PIN Photodiode encapsulated in clear Top View low profile package. It is ideal for applications from 700nm to 1100nm that require high sensitivity with low dark current and short switching time.
Features
* * * * * * * * Top View Package Short Switching Time High Sensitivity Low Dark Current Low Junction Capacitance Wide viewing Angle Lead Free & ROHS Compliant Available in Tape & Reel
Applications
* IR Remote Control for Consumer Device * IR Remote Control for Industrial Electronics & Equipment * High Speed IR data communication
Ordering Information
Part Number ASDL-5880-C ASDL-5880-C3 Lead Form Straight Color Clear Packaging Tape & Reel Bulk Shipping Option 4000pcs 8000pcs / Carton
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010") unless otherwise noted 3. Protuded resin under flange is 1.5mm (.059") max 4. Lead spacing is measured where leads emerge from package 5. Active area: 49 x 49 mm2 6. Refractive index of epoxy: = 1.5. 7. Specifications are subject to change without notice.
Absolute Maximum Ratings at TA=25C
Parameter Power Dissipation Reverse Voltage (Ir=00uA) Operating Temperature Storage Temperature Junction temperature Lead Soldering Temperature [ .6mm (0.063") From Body ] Symbol PDISS VR TO TS TJ 60C for 5 seconds -40 -55 Min. Max 50 30 85 00 0 Unit mW V C C C
Electrical Characteristics at 25C
Parameter Forward Voltage Breakdown Voltage Reverse Dark Current Diode Capacitance Symbol VF VBR ID CO 5 30 30 Min. Typ. Max. .3 Unit V V nA pF Condition If = 50mA Ir= 00uA Ee = 0mW/cm VR=0V Ee=0mW/cm Vr = 3V F = MHZ Ee = 0mW/cm = 940nm Ee=0.5mW/cm
Open Circuit Voltage Thermal Resistance, Junction to Pin
VOC RqJP -
350 375
mV C/W
Optical Characteristics at 25C
Parameter Photocurrent Symbol IPH Min. Typ. 3 Max. Unit uA Condition Ee = 0.5mW/cm = 940nm Vr = 5V = 940nm Vr = 5V
Radiant Sensitive Area Absolute Spectral Sensitivity Viewing Angle Wavelength of Peak sensitivity Spectral BandWidth Rise Time
A S / PK tr 700
.55 0.6 80 900 900 5 00
mm A/W Deg nm nm ns VR = 0V = 850nm RL = K VR = 0V = 850nm RL = K
Fall Time
tf
5
ns
3
Typical Electrical/Optical Characteristics Curves (TA=25C unless otherwise indicated)
pA 4000 100 pF
3000
80
Dark Current ID
Capacitance Ct
60
2000
40
1000
20
0
0
5
10
15
20 V
0
10
-2
10
-1
10
0
10
1
10 V
2
Reverse Voltage VR
Figure 1. DARK CURRENT VS. REVERSE VOLTAGE TA=25C, Ee=0 mW/cm 2
Reverse Voltage VR
Figure 2. CAPACITANCE VS. REVERSE VOLTAGE F=1MHZ; Ee=0mW/cm 2
nA 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10
-1
103
10
2
Is amb
Is 25
o
Dark Current ID
-20 0 20 40 60 80 C
o
Photocurrent
10
1
10
0
0
20
40
60
80
100 C
o
Ambient Temperature
Figure 3. PHOTOCURRENT VS. AMBIENT TEMPERATURE
Ambient Temperature
Figure 4. DARK CURRENT AMBIENT TEMPERATURE VR=10, Ee=0mW/cm 2
4
Typical Electrical/Optical Characteristics Curves (TA=25C unless otherwise indicated) Cont.
100 % 10
2
uA
Relative Spectral Sensitivity
80 10 60
1
Photocurrent Ip
10
0
40
20
10
-1
0 200 400 600 800 1000 1200 Wavelength
Figure 5. RELATIVE SPECTRAL SENSITIVITY VS WAVELENGTH
10
-2
10
-2
10
-1
10
0
10
1
mW 2 CM
Irradiance Ee
Figure 6. PHOTOCURRENT VS IRRADIANCE = 940 nm
0
o
10
o
20
o
175
30 40 50 60
o
Total Power Dissipation mW
o
Relative Sensitivity
125
o
1.0 0.9 0.8 0.7
o
75
o
70 o 80 100 0.5 0.3 0 0.2 0.4 0.6
o
25 0 -40 -20
o
0
20 40 60 80 100 C
Ambient Temperature
Figure 7. SENSITIVITY DIAGRAM Figure 8. TOTAL POWER DISSIPATION VS AMBIENT TEMPERATURE
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright (c) 007 Avago Technologies Limited. All rights reserved. AV0-000EN - January , 007

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