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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU323A DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V(Min.) *DARLINGTON *High Reliability APPLICATIONS *Automotive ignition *Switching regulator *Motor control applications ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current- Continuous Collector Current-Peak Base Current Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range VALUE 600 400 8 10 16 3 175 200 -65~200 UNIT V V V A A A W PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE(on) ICER ICBO IEBO hFE-1 hFE-2 hFE-3 VECF COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain DC Current Gain C-E Diode Forward Voltage Output Capacitance CONDITIONS IC= 0.2A; IB= 0; L= 10mH IC= 3A; IB= 60mA B BU323A MIN 400 TYP MAX UNIT V 1.5 1.7 2.7 2.2 3.0 2.5 1.0 1.0 40 300 150 50 3.5 165 2000 V V V V V V mA mA mA IC= 6 A; IB= 120mA IC= 10 A; IB= 300mA B IC= 6 A; IB= 120mA IC= 10 A; IB= 300mA B IC= 10A ; VCE= 6V VCER= RatedVCER;RBE= 100 VCB= RatedVCBO; IE= 0 VEB= 6V; IC= 0 IC= 3A ; VCE= 6V IC= 6A ; VCE= 6V IC= 10A ; VCE= 6V IF= 10A IE= 0; VCB= 10V; f= 100kHz V pF Switching Times ts tf Storage Time VCC= 12V; IC= 6A, IB1= -IB2= 0.3A Fall Time 15 15 s s isc Websitewww.iscsemi.cn |
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