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| CMT05N50 POWER MOSFET GENERAL DESCRIPTION This Power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid and relay drivers. FEATURES Higher Current Rating Lower rDS(ON), Lower Capacitances Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PIN CONFIGURATION TO-220/TO-220FP SYMBOL D Top View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ORDERING INFORMATION Part Number CMT05N50N220 CMT05N50N220FP Package TO-220 TO-220FP ABSOLUTE MAXIMUM RATINGS Rating Drain to Current Continuous Pulsed (Note 1) Gate-to-Source Voltage Continue Total Power Dissipation Derate above 25 Single Pulse Avalanche Energy (Note 2) Operating and Storage Temperature Range Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds EAS TJ, TSTG JC JA TL Symbol ID IDM VGS PD Value 5.0 18 20 96 0.77 125 -55 to 150 1.70 62 300 V W W/ mJ /W Unit A 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 1 CMT05N50 POWER MOSFET ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25. CMT05N50 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 500V, VGS = 0 V) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = -20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.7A) (Note 4) Forward Transconductance (VDS = 15V, ID = 2.5 A) (Note 4) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Reverse Recovery Charge Forward Turn-On Time Reverse Recovery Time Diode Forward Voltage Note (1) (2) (3) Repetitive rating; pulse width limited by max. junction temperature VDD = 100V, VGS = 10V, L=10mH, IAS = 5A, RG = 25 ISD 4.5A, di/dt 75A/s, VDD V(BR)DSS, TJ 150 IS = 5A, VGS = 0 V IF = 5A, di/dt = 100A/s , TJ = 25 Qrr ton trr VSD 1.8 ** 415 1.5 ns V C LS 7.5 nH (VDS = 400V, ID = 5A VGS = 10 V) (Note 4) (VDD = 250 V, ID = 5 A, RG = 9.1, VGS = 10 V) (Note 4) (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD 2.8 520 170 11 7.0 9.0 20 10 10 2 3 4.5 730 240 20 10 20 40 20 1.5 mhos pF pF pF ns ns ns ns nC nC nC nH VGS(th) 2.0 4.0 V IGSSR -100 nA IGSSF IDSS 25 100 nA A Symbol V(BR)DSS Min 500 Typ Max Units V ** Negligible, Dominated by circuit inductance 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 2 CMT05N50 POWER MOSFET TYPICAL ELECTRICAL CHARACTERISTICS 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 3 CMT05N50 POWER MOSFET PACKAGE DIMENSION TO-220 D A c1 F E PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE E1 A A1 L1 b b1 c c1 D L E E1 e e1 F L b1 e1 e b A1 c Side View L1 Front View TO-220FP 0 0.1 D Q H R1 C R J .5 0 R1 .5 0 B I 8 3.1 A B A C D E E P K O G H I J K M N O P Q 1. R 60 G b R b b1 b2 e b1 e Front View b2 R N M Side View Back View 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 4 CMT05N50 POWER MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. customer should provide adequate design and operating safeguards. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer's applications, the HsinChu Headquarter 5F-1, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 Sales & Marketing 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : +886-2-2788 0558 F A X : +886-2-2788 2985 2006/10/11 Rev. 1.1 Champion Microelectronic Corporation Page 5 |
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