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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1427 DESCRIPTION *With TO-3P(H)1S package *Built-in damper diode *High voltage ,high speed *Low collector saturation voltage APPLICATIONS *Designed for use in large screen color deflection circuits PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC IB PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 2.5 80 150 -55~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 1.56 UNIT /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1427 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 5 V VCE(sat) VBE(sat) Collector-emitter saturation voltage IC=4A; IB=0.8A IC=4A; IB=0.8A 5.0 V Base-emitter saturation voltage 1.5 V A ICBO Collector cut-off current VCB=500V; IE=0 10 hFE DC current gain IC=1A ; VCE=5V 8 fT Transition freuqency IC=0.1A ; VCE=10V;f=1MHz 3 MHz COB Output capacitance IE=0 ; VCB=10V;f=1MHz 165 pF VF tf Diode forward voltage IF=5A IC=4A;IB1=0.8A 2.0 V s Fall time 1.0 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1427 Fig.2 outline dimensions (unindicated tolerance:0.15 mm) 3 |
Price & Availability of 2SD1427
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