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| HELP2 PCS/CDMA 3.4V/28dBm Linear Power Amplifier Module TM AWT6308R FEATURES * * Data Sheet - Rev 2.3 InGaP HBT Technology High Efficiency: 40 % @ +28 dBm output 19 % @ +16 dBm output Low Quiescent Current: 15 mA Low Leakage Current in Shutdown Mode: <1 A Internal Voltage Regulation Optimized for a 50 System Low Profile Miniature Surface Mount Package: 1 mm CDMA 1XRTT, 1xEV-DO Compliant Pinout Enables Easy Phone Board Migration From 4 mm x 4 mm Package RoHS-Compliant Package, 250 oC MSL-3 CDMA/EVDO PCS-band Wireless Handsets and Data Devices * * * * * * * * * AW T 630 8R APPLICATIONS M9 Package 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module PRODUCT DESCRIPTION The AWT6308R meets the increasing demands for higher efficiency and smaller footprint in CDMA 1X handsets. The package pinout was chosen to enable handset manufacturers to switch from a 4 mm x 4 mm PA module with few layout changes while reducing board area requirements by 44%. The AWT6308R uses ANADIGICS' exclusive InGaPPlusTM technology, which combines HBT and pHEMT devices on the same die, to enable state-of-the-art reliability, temperature stability, and ruggedness. The AWT6308R is part of ANADIGICS' High-Efficiencyat-Low-Power (HELPTM) family of CDMA power amplifiers, which deliver low quiescent currents and significantly greater efficiency without a costly external DAC or DC-DC converter. Through selectable bias modes, the AWT6308R achieves optimal efficiency across different output power levels, specifically at low- and mid-range power levels where the PA typically operates, thereby dramatically increasing handset talk-time and standby-time. Its built-in voltage regulator eliminates the need for external voltage regulation components. The 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 system. GND at slug (pad) VBATT 1 8 VCC RFIN 2 7 RFOUT VMODE 3 Bias Control 6 GND VEN 4 5 GND Figure 1: Block Diagram 10/2008 AWT6308R GND VBATT 1 8 VCC RFIN 2 7 RFOUT VMODE 3 6 GND VEN 4 GND 5 Figure 2: Pinout (X-ray Top View) GND Table 1: Pin Description PIN 1 2 3 4 5 6 7 8 NAME VBATT RFIN VMODE VEN GND GND RFOUT VCC DESCRIPTION Battery Voltage RF Input Mode Control Voltage PA Enable Voltage Ground Ground RF Output Supply Voltage 2 Data Sheet - Rev 2.3 10/2008 AWT6308R ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER Supply Voltage (VCC and VBATT) Mode Control Voltage (VMODE) Enable Voltage (VEN) RF Input Power (PIN) Storage Temperature (TSTG) MIN 0 0 0 -40 MAX +5 +3.5 +3.5 +10 +150 UNIT V V V dBm C Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER Operating Frequency (f) Supply Voltage (VCC and VBATT) Enable Voltage (VEN) Mode Control Voltage (VMODE) RF Output Power (POUT) Case Temperature (TC) MIN 1850 +3.2 +2.2 0 +2.2 0 27.5 -30 (1) TYP +3.4 +2.4 +2.4 +28.0 - MAX 1915 +4.2 +3.1 +0.5 +3.1 +0.5 +85 UNIT MHz V V V dBm C COMMENTS PA "on" PA "shut down" Low Bias Mode High Bias Mode The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at Vcc = +3.2 V, Pout is derated by 0.5 dB. Data Sheet - Rev 2.3 10/2008 3 AWT6308R Table 4: Electrical Specifications - CDMA Operation (TC = +25 C, VBATT = VCC = +3.4 V, VEN = +2.4 V, 50 system, IS-95 uplink waveform) PARAMETER MIN 24.5 14 14 TYP 27 16 16 MAX 29.5 18 18 UNIT COMMENTS POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +18 dBm, VMODE = +2.4 V, VCC = +3.7 V Gain dB Adjacent Channel Power at +1.25 MHz offset Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz - -51 -58 -52 -46.5 -47 -47 dBc POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +18 dBm, VMODE = +2.4 V, VCC = +3.7 V Adjacent Channel Power at +1.98 MHz offset Primary Channel BW =1.23 MHz Adjacent Channel BW = 30 kHz Adjacent Channel Power at +2.25 MHz offset Primary Channel BW = 1.23 MHz Adjacent Channel BW = 30 kHz Power-Added Efficiency Quiescent Current (Icq) Enable Current Mode Control Current Battery Current Leakage Current Noise in Receive Band Harmonics 2fo 3fo, 4fo Input Impedance Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - -56 -56 -53 -53 dBc POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V 36 16 - -62 -62 40 19 15 0.3 0.3 3 <1 -135 -43 -55 - -57 -57 20 0.8 0.8 5 5 -133 -30 -30 2:1 dBc % mA mA mA mA A POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V through VCC pin, VMODE = +2.4 V through VEN pin, PA "on" through VMODE pin, VMODE = +2.4 V through VBATT pin, VMODE = +2.4 V VCC = +4.2 V, VEN = 0 V, VMODE = 0 V dBm/Hz 1930 MHz to 1990 MHz dBc VSWR POUT < +28 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating ranges Applies over full operating range - - -65 dBc 8:1 - - VSWR Notes: 1. ACPRs and Efficiency Limits at mid-band only. 4 Data Sheet - Rev 2.3 10/2008 AWT6308R APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to both the VREF and VMODE voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to the VMODE voltage. The Bias Control table lists the recommended modes of operation for various applications. Table 5: Bias Control APPLICATION CDMA - low power CDMA - high power Shutdown POUT LEVELS <+16dBm >+16 dBm LOGIC Low High Shutdown VEN +2.4 V +2.4 V 0V VMODE +2.4 V 0V 0V VBATT VCC C5 2.2F 1 2 C1 1000 pF VBATT RFIN VMODE V ENABLE GND at slug VCC RFOUT 8 7 C3 1000 pF C4 2.2 F RF IN VMODE VENABLE 3 4 GND 6 GND 5 C6 68 pF RF OUT C2 0.01F Figure 3: Application Circuit Data Sheet - Rev 2.3 10/2008 5 AWT6308R PACKAGE OUTLINE Figure 4: M9 Package Outline - 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module 6308R LLLLNN BBBBCC Figure 5: Branding Specification 6 Data Sheet - Rev 2.3 10/2008 AWT6308R COMPONENT PACKAGING Pin 1 Figure 6: Tape & Reel Packaging Table 6: Tape & Reel Dimensions PACKAGE TYPE 3 mm x 3 mm x 1 mm TAPE WIDTH 12 mm POCKET PITCH 4 mm REEL CAPACITY 2500 MAX REEL DIA 7" Data Sheet - Rev 2.3 10/2008 7 AWT6308R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE -30 C to +85 C PACKAGE DESCRIPTION RoHS-Compliant 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module COMPONENT PACKAGING AWT6308RM9Q7 Tape and Reel, 2500 pieces per Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product's formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. WARNING 8 Data Sheet - Rev 2.3 10/2008 |
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