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| LED - Chip Preliminary Radiation Infrared Type DH 10.04.2007 Technology AlGaAs/GaAs EL-950-11 rev. 01/06 Electrodes P (anode) up 1000 typ. dimensions (m) typ. thickness 270 (25) m cathode gold alloy, 0.5 m structured, 25% covered anode gold alloy, 1.5 m PoC-05 Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage2 Reverse voltage Radiant power1 Radiant power2 Peak wavelength Spectral bandwidth at 50% Switching time 1 2 1000 Symbol Min Typ Max Unit IF = 20 mA IF = 350 mA IR = 10 A IF = 20 mA IF = 350 mA IF = 20 mA IF = 20 mA IF = 20 mA VF VF VR e e P 0.5 tr, tf 5 1.0 18 940 1.1 1.5 1.3 1.7 V V V 1.3 23 950 45 600 960 mW mW nm nm ns Measured on bare chip on TO-18 header with EPIGAP equipment Measured on bare chip glued on a O 8 x 1mm Cu header (10 s after switched on) with EPIGAP equipment (for information only) Labeling Type EL-950-11 Lot N e(typ) [mW] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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