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| NTJD4152P Trench Small Signal MOSFET 20 V, 0.88 A, Dual P-Channel, ESD Protected SC-88 Features http://onsemi.com V(BR)DSS RDS(on) Typ 215 mW @ -4.5 V -20 V 345 mW @ -2.5 V 600 mW @ -1.8 V -0.88 A ID Max * * * * * * * * Leading Trench Technology for Low RDS(ON) Performance Small Footprint Package (SC70-6 Equivalent) ESD Protected Gate Pb-Free Package is Available Load/Power Management Charging Circuits Load Switching Cell Phones, Computing, Digital Cameras, MP3s and PDAs Applications S1 1 6 D1 MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current Steady State Steady State tv5s tv5s TA = 25C TA = 85C TA = 25C TA = 85C TA = 25C TA = 85C TA = 25C TA = 85C t 10 ms IDM TJ, TSTG IS TL PD ID PD Symbol VDSS VGS ID Value -20 12 -0.88 -0.63 0.272 0.141 -1.0 -0.72 0.35 0.181 3.0 -55 to 150 -0.48 260 A W 1 6 TK M G G 1 S1 G1 D2 A C TK M G = Device Code = Date Code = Pb-Free Package A W Unit V V A Top View D2 3 4 S2 G1 2 5 G2 MARKING DIAGRAM & PIN ASSIGNMENT D1 G2 S2 SC-88/SOT-363 Operating Junction and Storage Temperature Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C CASE 419B STYLE 28 THERMAL RESISTANCE RATINGS (Note 1) Parameter Junction-to-Ambient - Steady State Junction-to-Ambient - t v 5 s Junction-to-Lead - Steady State Symbol RqJA RqJA RqJL Max 460 357 226 Unit C/W (Note: Microdot may be in either location) ORDERING INFORMATION Device NTJD4152PT1 NTJD4152PT1G Package SOT-363 SOT-363 (Pb-Free) Shipping 3000 Units/Reel 3000 Units/Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces), steady state. 2. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces), t v 5 s. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2007 1 August, 2007 - Rev. 2 Publication Order Number: NTJD4152/D NTJD4152P ELECTRICAL CHARACTERISTICS (TJ=25C unless otherwise stated) Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS VGS = 0 V, ID = -250 mA VGS = 0 V, VDS = -16 V TJ = 25C TJ = 125C 1.0 0.03 6.0 -20 1.0 5.0 1.0 mA V mA Symbol Test Condition Min Typ Max Unit Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 4.5 V VDS = 0 V, VGS = 12 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Drain-to-Source On Resistance VGS(TH) RDS(on) VGS = VDS, ID = -250 mA VGS = -4.5 V, ID = -0.88 A VGS = -2.5 V, ID = -0.71 A VGS = -1.8 V, ID = -0.20 A Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge CISS COSS CRSS QG(TOT) QGS QGD VGS = -4.5 V, VDS = -10 V, ID = -0.88 A VGS = 0 V, f = 1.0 MHz, VDS = -20 V 155 25 18 2.2 0.5 0.65 nC pF gFS VDS = -10 V, ID = -0.88 A -0.45 215 345 600 3.0 260 500 1000 S V mW SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -10 V, ID = -0.5 A, RG = 20 W 5.8 6.5 13.5 3.5 ns DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = -0.48 A TJ = 25C TJ = 125C -0.8 -0.66 -1.2 V 3. Pulse Test: pulse width 300ms, duty cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTJD4152P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 1 VGS = -4.5, -3.5 & -2.5 V -ID, DRAIN CURRENT (AMPS) -2 V 0.75 TJ = 25C -1.75 V -ID, DRAIN CURRENT (AMPS) 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 0 25C TJ = -55C 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 125C VDS -20 V 0.5 -1.5 V 0.25 -1.25 V -1 V 0 0.4 0.8 1.2 1.6 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.3 VGS = -4.5 V TJ = 125C 0.25 2.5 Figure 2. Transfer Characteristics TJ = 25C 2.0 VGS = -1.8 V 1.5 0.2 TJ = 25C 1.0 0.15 TJ = -55C 0.1 0 0.25 0.5 0.75 1 -ID, DRAIN CURRENT (AMPS) 0.5 0 0.4 VGS = -2.5 V VGS = -4.5 V 0.5 0.6 0.7 0.8 0.9 1 -ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature 2.0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 ID = -0.88 A VGS = -4.5 V 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V -IDSS, LEAKAGE CURRENT (nA) TJ = 150C 1000 TJ = 125C 100 10 -25 0 25 50 75 100 125 150 0 TJ, JUNCTION TEMPERATURE (C) 10 5 15 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 20 Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTJD4152P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 350 Ciss 300 C, CAPACITANCE (pF) 250 200 150 100 50 0 10 Coss 5 0 5 10 15 20 VDS = 0 V VGS = 0 V TJ = 25C 5 QT 4 Crss 3 Q1 2 Q2 1 0 0 0.4 ID = -0.88 A TJ = 25C 0.8 1.2 1.6 Qg, TOTAL GATE CHARGE (nC) 2 VGS VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation Figure 8. Gate-to-Source Voltage vs. Total Gate Charge 100 -IS, SOURCE CURRENT (AMPS) 0.5 VGS = 0 V TJ = 25C 0.4 t, TIME (ns) 10 td(off) tr td(on) tf VDD = -10 V ID = -0.8 A VGS = -4.5 V 10 RG, GATE RESISTANCE (OHMS) 100 0.3 0.2 0.1 0 1 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current http://onsemi.com 4 NTJD4152P PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D e A3 6 5 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 HE 1 2 3 -E- C b 6 PL 0.2 (0.008) M L E M A A1 SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 5 NTJD4152P/D |
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