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| SST6301K Elektronische Bauelemente 640mA, 30V,RDS(ON) 1.0[ N-Channel Enhancement Mode Power Mos.FET SOT-26 Description 0.37Ref. 0.20 0.60 Ref. 2.60 3.00 The SST6301K utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The SST6301K is universally used for all commercial-industrial applications. 0.30 0.55 0.95 Ref. 2.70 3.10 0~0.1 0.25 1.40 1.80 0 o 10 o 1.20Ref. Features * RoHS Compliant * Simple Drive Requirement * Small Package Outline G1 D1 D2 G2 Dimensions in millimeters D1 6 S1 5 D2 4 Date Code 301E S1 S2 1 G1 2 S2 3 G2 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current 1,2 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 16 640 500 950 1.2 0.01 -55~+150 Unit V V mA mA mA W W/ C o o C Thermal Data Parameter Thermal Resistance Junction-ambient3 (Max) Symbol Rthj-a Ratings 110 o Unit C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 SST6301K Elektronische Bauelemente 640mA, 30V,RDS(ON) 1.0[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C) o o Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min. 30 _ Typ. _ Max. _ _ Unit V V/ oC V uA uA uA Test Condition VGS=0V, ID= 250uA Reference to 25oC ,ID= 1mA VDS=VGS, ID=250uA VGS=16V VDS=30V,VGS=0 VDS= 24V,VGS=0 VGS=10V, ID=500mA 0.06 _ _ _ _ 0.5 _ _ _ _ 1.5 10 1 100 1 2 3 1.6 _ _ _ _ _ _ _ _ _ 1 0.5 0.5 12 10 56 29 32 8 6 600 Static Drain-Source On-Resistance RDS(ON) _ _ [ VGS=4.5V, ID=400mA VGS=2.7V, ID=200mA ID=600mA VDS=50V VGS=4.5V Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Forward Transconductance Qg Qgs Qgd Td(ON) Tr Td(Off) Tf Ciss Coss Crss Gfs _ _ _ _ _ _ _ _ _ _ nC VDD= 30V ID= 600mA nS VGS=10V RG=3.3[ RD=52 [ 50 _ _ pF VGS=0V VDS=25V f=1.0MHz _ _ mS VDS=10V, ID=600mA Source-Drain Diode Parameter Forward On Voltage 2 Symbol VS D Min. _ Typ. _ Max. 1.2 Unit V Test Condition IS=1.2A , VGS=0V. Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse widthO 300us, dutycycleO2%. 3.Surface mounted on 1 in copper pad of FR4 board; 180 OC/W when mounted on min. copper pad. 2 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 SST6301K Elektronische Bauelemente 640mA, 30V,RDS(ON) 1.0[ N-Channel Enhancement Mode Power Mos.FET Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode http://www.SeCoSGmbH.com/ 01-Jun-2002 Rev. A Fig 6. Gate Threshold Voltage v.s. Junction Temperature Any changing of specification will not be informed individual Page 3 of 4 SST6301K Elektronische Bauelemente 640mA, 30V,RDS(ON) 1.0[ N-Channel Enhancement Mode Power Mos.FET Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 180 Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 |
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