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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD728 DESCRIPTION With TO-3PN package Complement to type 2SB692 APPLICATIONS For low frequency power amplifier and power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER TOR NDU ICO E SEM ANG INCH CONDITIONS VALUE 150 Collector-base voltage Open emitter Collector-emitter voltage Open base 150 5 Emitter-base voltage Open collector Collector current Collector power dissipation Junction temperature Storage temperature TC=25ae 6 70 150 -55~150 UNIT V V V A W ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD728 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=50mA ;IB=0 IE=1mA ;IC=0 IC=5A ;IB=0.5A VCB=150V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V 100 20 MIN 150 5 2.0 0.1 0.1 TYP. MAX UNIT V V V mA mA SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT COB NDU ICO E SEM ANG INCH Collector output capacitance IE=0 ;f=1MHz;VCB=10V TOR 7 160 MHz pF 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD728 TOR NDU ICO E SEM ANG INCH Fig.2 outline dimensions 3 |
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