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PD - 97439
IRLML0060TRPBF
HEXFET(R) Power MOSFET
VDS VGS Max RDS(on) max
(@VGS = 10V)
60 16 92 116
V V m m
6 * '
Micro3TM (SOT-23) IRLML0060TRPBF
RDS(on) max
(@VGS = 4.5V)
Application(s)
* Load/ System Switch
Features and Benefits
Features
Industry-standard pinout Compatible with existing Surface Mount Techniques RoHS compliant containing no lead, no bromide and no halogen MSL1, Industrial qualification
Benefits
Multi-vendor compatibility results in Easier manufacturing Environmentally friendly Increased reliability
Absolute Maximum Ratings
Symbol
VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG
Parameter
Drain-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
60 2.7 2.1 11 1.25 0.80 0.01 16 -55 to + 150
Units
V A
W W/C V C
Thermal Resistance
Symbol
RJA RJA
Parameter
Junction-to-Ambient
e
Typ.
--- ---
Max.
100 99
Units
C/W
Junction-to-Ambient (t<10s)
f
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet. Notes through are on page 10
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12/02/09
IRLML0060TRPBF
Electric Characteristics @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
60 --- --- --- 1.0 --- --- --- --- --- 7.6 --- --- --- --- --- --- --- --- --- --- --- 0.06 98 78 --- --- --- --- --- 1.6 --- 2.5 0.7 1.3 5.4 6.3 6.8 4.2 290 37 21 --- --- 116 92 2.5 20 250 100 -100 --- --- --- --- --- --- --- --- --- --- --- --- pF ns nC V
Conditions
VGS = 0V, ID = 250A VGS = 4.5V, ID = 2.2A VGS = 10V, ID = 2.7A VDS = VGS, ID = 25A VDS = 60V, VGS = 0V VDS = 60V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 25V, ID = 2.7A ID = 2.7A VDS =30V VGS = 4.5V ID = 1.0A RG = 6.8 VGS = 4.5V VGS = 0V VDS = 25V = 1.0MHz
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) VGS(th) IDSS IGSS RG gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
V/C Reference to 25C, ID = 1mA m V A nA S
d d
d
VDD = 30Vd
Source - Drain Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 14 13 1.6 A 11 1.3 21 20 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 2.7A, VGS = 0V TJ = 25C, VR = 30V, IF=1.6A di/dt = 100A/s
d
d
2
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IRLML0060TRPBF
100 100
60s PULSE WIDTH
Tj = 25C
ID, Drain-to-Source Current (A)
TOP
10
BOTTOM
ID, Drain-to-Source Current (A)
VGS 10V 6.0V 4.5V 4.0V 3.5V 3.3V 3.0V 2.8V
TOP
10
BOTTOM
VGS 10V 6.0V 4.5V 4.0V 3.5V 3.3V 3.0V 2.8V
60s PULSE WIDTH
Tj = 150C
1
1 2.8V 0.1
0.1 2.8V 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 2.7A VGS = 10V
ID, Drain-to-Source Current (A)
10
1.5
1
TJ = 150C
T J = 25C
1.0
0.1 2 3
VDS = 25V 60s PULSE WIDTH 4 5
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRLML0060TRPBF
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
14.0 ID= 2.7A
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
VDS= 48V VDS= 30V VDS= 12V
1000 Ciss Coss 100 Crss
10 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
0
1
2
3
4
5
6
7
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
100
100 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100sec 1msec 1 10msec
10
T J = 150C 1
T J = 25C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
0.1
T A = 25C
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V) 0.01 0
Tj = 150C Single Pulse 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLML0060TRPBF
3.0
V DS
2.5
ID, Drain Current (A)
RD
VGS RG
D.U.T.
+
2.0 1.5 1.0 0.5
VDS
- VDD
VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
0.0 25 50 75 100 125 150 T A , Ambient Temperature (C)
90%
Fig 9. Maximum Drain Current vs. Ambient Temperature
10% VGS
td(on) tr t d(off) tf
Fig 10b. Switching Time Waveforms
1000
Thermal Response ( Z thJA ) C/W
100
D = 0.50 0.20 0.10 0.05 0.02 0.01
10
1
0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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IRLML0060TRPBF
RDS(on), Drain-to -Source On Resistance (m )
RDS(on), Drain-to -Source On Resistance ( m)
400 ID = 2.7A 300
150 Vgs = 4.5V 125
200 T J = 125C 100 TJ = 25C 0 3 4 5 6 7 8 9 10
100 Vgs = 10V 75
50 0 2 4 6 8 10 12 ID, Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
Fig 13. Typical On-Resistance vs. Drain Current
Current Regulator Same Type as D.U.T.
QG
50K 12V .2F .3F
VGS
VG
QGS
QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRLML0060TRPBF
2.8
VGS(th), Gate threshold Voltage (V)
100
2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
0 1 10 100 1000 10000 100000 Time (sec) 20 80
ID = 250A
Power (W)
60
ID = 25A
40
Fig 15. Typical Threshold Voltage vs. Junction Temperature
Fig 16. Typical Power vs. Time
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IRLML0060TRPBF
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
6 D
A A2 C
DIMENSIONS
A 5
SYMBOL
MILLIMETERS MIN MAX
INCHES MIN MAX
3 6 E1 1 2
E
0.15 [0.006] M C B A
0.10 [0.004] C
A1
3X b
0.20 [0.008] M C B A
5
B
e e1
NOTES:
H4
L1
Recommended Footprint
c
A A1 A2 b c D E E1 e e1 L L1 L2
0.972
0.950
0.89 0.01 0.88 0.30 0.08 2.80 2.10 1.20 0.95 1.90 0.40 0.54 0.25 0
1.12 0.10 1.02 0.50 0.20 3.04 2.64 1.40 BSC BSC 0.60 REF BSC 8
## 0.0004 # "$ # ! ! " ' ! '" # #& $$ "& 7T8 &$ 7T8A % !# ! REF BSC
0 8
"$
L2 3X L 7
0.802
2.742
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994 2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. 3. CONTROLLING DIMENSION: MILLIMETER. 4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE. 7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
1.900
Micro3 (SOT-23/TO-236AB) Part Marking Information
S 6 @ A S 6 9 I @ G 6 8 A A P A DU DB 9 A U T 6 G A 7 A 9 @ 9 @ 8 @ S Q A A D A % ! A 2 A X FF S@ !"# P@ XX X 6789 S 6 @
S 6 @ A 2 A F @ @ X A 2 A X
!"#$%&'( !!!!!!!!!!
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
S @ 7 H V I A U S 6 Q U P G @ 9 P 8 ) @ 8 I @ S @ A @ S A @ 9 P 8 A S @ 7 H V I A U S 6 Q ! # ! G H G DS A 2 A 6 " ' ! G H G DS A 2 A 7 ! " % G H G DS A 2 A 8 " $ G H G DS A 2 A 9 ! # % G H G DS A 2 A @ # % G H G DS A 2 A A ! $ ! G H G DS A 2 A B " ! $ G H G DS A 2 A C " G H G DS A 2 A DA " ! G H G DS A 2 A E G H G DS A 2 A F % G H G DS A 2 A G # G H G DS A 2 A H % ! G H G DS A 2 A I
!"#$%&'( 6789@A BCE F
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Ya X 6789
S @ U U @ G A 6 A 7 A 9 @ 9 @ 8 @ S Q A A D A ! $ & ! A 2 A X S 6 @ !"#$%&'( !!!!!!!!!! ! $$$ Ya
r r A A xA r rq h Ar xG A r A r vh up q A rA v ir hr AA ru yv A 6 Au ) rA h I
8
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IRLML0060TRPBF
Micro3TM Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 )
1.6 ( .062 ) 1.5 ( .060 )
1.85 ( .072 ) 1.65 ( .065 )
1.32 ( .051 ) 1.12 ( .045 )
TR
3.55 ( .139 ) 3.45 ( .136 )
8.3 ( .326 ) 7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 ) 3.9 ( .154 )
1.1 ( .043 ) 0.9 ( .036 )
0.35 ( .013 ) 0.25 ( .010 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLML0060TRPBF
Orderable part number IRLML0060TRPBF
Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Micro3
Cons umer (per JE DE C JE S D47F

Package Type Micro3
Standard Pack Form Quantity Tape and Reel 3000
Note
guidelines ) MS L1
(per IPC/JE DE C J-S T D-020D Yes
)

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board. Refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/2009
10
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