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| MT4S200U TOSHIBA TRANSISTOR SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE MT4S200U UHF-SHF Low Noise Amplifier Application Unit: mm FEATURES * * Low Noise Figure :NF=1.7dB (@f=5.8GHz) High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P USQ JEDEC JEITA 1 2 1.Collector 2.Emitter 3.Base 4.Emitter 2-2K1E Maximum Ratings (Ta = 25C) Characteristics Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation Collector Power dissipation Junction temperature Storage temperature Range Symbol VCBO VCEO VEBO IC IB Pc PC(Note1) Tj Tstg Rating 8 4 1.2 35 5 100 140 150 -55~150 Unit V V V mA mA mW mW C C TOSHIBA Weight: 0.006 g (typ.) Note1 : Ta=25degC (When mounted on a 1.6mm(t) glass epoxy PCB) 1 2006-12-26 MT4S200U Microwave Characteristics (Ta = 25C) Characteristics Transition Frequency Insertion Gain Symbol fT |S21e| (1) |S21e| (2) NF(1) NF(2) 2 2 Test Condition VCE=3V, IC=15mA VCE=3V, IC=15mA,f=2GHz VCE=3V, IC=15mA, f=5.8GHz VCE=3V, IC=5mA, f=2GHz VCE=3V, IC=5mA, f=5.8GHz Min 15.0 Typ. 30 17.5 9.5 0.75 1.7 Max 1.0 Unit GHz dB dB dB dB Noise Figure Electrical Characteristics (Ta = 25C) Characteristics Collector Cut-off Current Emitter Cut-off Current DC Current Gain Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE Cob Cre Test Condition VCB=8V, IE=0 VEB=1V, IC=0 VCE=3V, IC=15mA VCB=3V, IE=0, f=1MHz VCB=3V, IE=0, f=1MHz (Note 1) Min 100 Typ. 0.25 0.074 Max 1 1 260 0.5 0.18 Unit A A pF pF Note 1: Cre is measured by 3 terminal method with capacitance bridge. Caution: This device is sensitive to electrostatic discharge due to applied the high frequency transistor process of fT=60GHz class is used for this product. Please make enough tool and equipment earthed when you handle. 2 2006-12-26 MT4S200U IC-VCE 30 COMMON EMITTER,Ta=25 IB= 160uA 140uA 120uA 100uA 80uA 60uA 40uA 20uA hFE-IC 1000 Collector-current IC(mA) 25 20 15 10 5 0 DC Current Gain hFE 100 10 0.0 1.0 2.0 3.0 4.0 5.0 COMMON EMITTER VCE=3V 0.1 1 10 100 Collector-Emitter voltage VCE(V) Collector-current IC(mA) |S21e|2-IC 2GHz 20 18 IC-VBE 100 10 1 0.1 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 COMMON EMITTER VCE=3V Ta=25 Insertion Gain |S21e|2(dB) Collector-current IC(mA) 16 14 12 10 8 6 4 2 0 1 10 f=2GHz Ta=25 100 VCE=3v VCE=2v Base-Emitter voltage VBE(V) |S21e|2-IC 5.8GHz 12 35 Collector-current IC(mA) fT-IC Transition Frequency fT(GHz) 10 30 25 20 15 10 5 0 1 10 VCE=3V Ta=25 100 Insertion Gain |S21e|2(dB) 8 6 4 2 0 1 10 VCE=3v f=5.8GHz Ta=25 100 Collector-current IC(mA) Collector-current IC(mA) 3 2006-12-26 MT4S200U Cre,Cob-VCB Reverse Transfer Capacitance Cre(pF) 0.40 IE=0,f=1MHz,Ta=25 5.0 4.0 2GHz Ga 5.8GHz NF NF,Ga-IC 25.0 20.0 15.0 2GHz NF 10.0 5.0 VCE=3v Ta=25 1 10 0.0 100 Output Capacitance Cob(pF) 0.35 0.25 0.20 0.15 0.10 0.05 0.00 0.1 1 10 Cre Noise Figure NF(dB) 0.30 Cob 3.0 2.0 1.0 0.0 5.8GH Ga Collector-Base voltage VCB (V) Collector-current IC(mA) 4 2006-12-26 Associated Gain Ga(dB) MT4S200U Output Power vs Input Power 15 10 15 10 Output Power vs Input Power Output Power [dB(mW)] Output Power [dB(mW)] 5 0 -5 -10 -15 -30 -20 -10 VCE=3v Ic=15mA f=2GHz Zs=ZL=50ohm 0 10 5 0 -5 -10 -15 -20 -10 VCE=3v Ic=15mA f=5.8GHz Zs=ZL=50ohm 0 10 Input Power [dB(mW)] Input Power [dB(mW)] IM3 (2GHz) 30 20 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -40 -30 VCE=3v,Ic=15mA f=2GHz,2.001GHz -20 -10 0 10 IM3 Pout IM3 (5.8GHz) 30 20 10 Output Power [dB(mW)] Output Power [dB(mW)] 0 -10 -20 -30 -40 -50 -60 -70 -80 Pout IM3 VCE=3v,Ic=15mA f=5.8GHz,5.801GHz -30 -20 -10 0 10 20 Input Power [dB(mW)] Input Power [dB(mW)] 5 2006-12-26 MT4S200U RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-12-26 |
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