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STM8319
S a mHop Microelectronics C orp.
Ver 1.0
Dual Enhancement Mode Field Effect Transistor ( N and P Channel )
PRODUCT SUMMARY (N-Channel)
VDSS
30V
PRODUCT SUMMARY (P-Channel)
VDSS
-30V
ID
7A
RDS(ON) (m) Max
25 @ VGS=10V
ID
-6A
RDS(ON) (m) Max
35 @ VGS=-10V 52 @ VGS=-4.5V
30 @ VGS=4.5V
D2 D2
5 6 7 8
4 3 2 1
G2 S2 G1 S1
S O-8 1
D1 D1
ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed
b d a
N-Channel 30 20 TA=25C TA=70C 7 5.6 25 17 TA=25C TA=70C 2 1.3
P-Channel -30 20 -6 -4.8 -22 20
Units V V A A A mJ W C
Single Pulse Avalanche Energy Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
-55 to 150
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
62.5
C/W
Details are subject to change without notice.
Oct,29,2007
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STM8319
Ver 1.0
N-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units V 1 10 uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=24V , VGS=0V
30
VGS= 20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=250uA VGS=10V , ID=7A VGS=4.5V , ID=6.4A VDS=5V , ID=7A
1
1.7 19 24 13
3 25 30
V m ohm m ohm S
DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) tf Qg Qgs Qgd Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=15V,VGS=0V f=1.0MHz
445 120 60
pF pF pF
VDD=15V ID=1A VGS=10V RGEN=6 ohm VDS=15V,ID=7A,VGS=10V VDS=15V,ID=7A,VGS=4.5V VDS=15V,ID=7A, VGS=10V
8.5 10.5 17 20 8 4 1.3 1.8
ns ns ns ns nC nC nC nC
DRAIN-SOURCE DIODE CHARACTERISTICS IS VSD Maximum Continuous Drain-Source Diode Forward Current Diode Forward Voltage
b
1.7 0.78 1.2
A V
VGS=0V,IS=1.7A
Oct,29,2007
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STM8319
Ver 1.0
P-Channel ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units V -1 10 uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current
VGS=0V , ID=-250uA VDS=-24V , VGS=0V
-30
VGS= 20V , VDS=0V
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
c
VDS=VGS , ID=-250uA VGS=-10V , ID=-6A VGS=-4.5V , ID=-4.9A VDS=-5V , ID=-6A
-1.0
-1.6 27 38 8.5
-3.0 35 52
V m ohm m ohm S
DYNAMIC CHARACTERISTICS CISS COSS CRSS
Input Capacitance Output Capacitance Reverse Transfer Capacitance
c
VDS=-15V,VGS=0V f=1.0MHz
790 215 120 10 15 67 33 15 7.5 1.4 4
pF pF pF ns ns ns ns nC nC nC nC
SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD=-15V ID=-1A VGS=-10V RGEN=6 ohm VDS=-15V,ID=-6A,VGS=-10V VDS=-15V,ID=-6A,VGS=-4.5V VDS=-15V,ID=-6A, VGS=-10V
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-1.7A -0.76
-1.7 -1.2
A V
Notes
_ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,VDD = 20V,VGS=10V,L=0.5mH.
Oct,29,2007
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STM8319
Ver 1.0
N-Channel
40 VGS=10V VGS=5V VGS=4.5V 20 VGS=4V
ID, Drain Current(A)
ID, Drain Current(A)
32
16
24 VGS=3.5V 16 VGS=3V
12 Tj=125 C 8 -55 C 4 0 25 C
8
0 0 0.5 1 1.5 2 2.5 3
0
0.7
1.4
2.1
2.8
3.5
4.2
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60 50
Figure 2. Transfer Characteristics
2.0 1.8 1.6 1.4 1.2 1.0 0.0
V G S =4.5V ID=6.4A V G S =10V ID=7A
RDS(on)(m )
40 30 20 VGS=10V 10 1 VGS=4.5V
1
RDS(on), On-Resistance Normalized
8
16
24
32
40
0
25
50
75
100
125
150 T j ( C )
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA
Vth, Normalized Gate-Source Threshold Voltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75
VDS=VGS ID=250uA
100 125 150
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation with Temperature 4
Figure 6. Breakdown Voltage Variation with Temperature
Oct,29,2007
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STM8319
Ver 1.0
20.0
49 42
Is, Source-drain current(A)
ID=7A
10.0
RDS(on)(m )
35
75 C
28 21
25 C
125 C
75 C 25 C
125 C
14 7
0
2
4
6
8
10
1.0 0.4
0.6
0.8
1.0
1.2
1.4
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
900
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VGS, Gate to Source Voltage(V)
750
C, Capacitance(pF)
8 6 4 2 0 0
VDS=15V ID=7A
600 Ciss 450 300 150 Crss 0 0 5 10 15 20 25 30 Coss
1
2
3
4
5
6
7
8
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
Tr
250
ID, Drain Current(A)
Switching Time(ns)
100 60 10
TD(off ) TD(on)
10
Tf
RD
S
(
) ON
L im
it
10 0u
1m
s
10
1
V G S =10V S ingle P ulse T c=25 C
DC
10 ms 0m s
s
1 1
VDS=15V,ID=1A VGS=10V
0.1 60 100 300 600 0.1
6 10
1
10
100
Rg, Gate Resistance()
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Oct,29,2007
5
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STM8319
Ver 1.0
15V
V(B R )DS S
tp
VDS
L
DR IV E R
RG
20V
D .U .T
IA S tp
+ - VD D
A
0.0 1
IAS
Unclamped Inductive Test Circuit Figure 13a.
Unclamped Inductive Waveforms Figure 13b.
10
Normalized Transient Thermal Resistance
1
0.5 0.2
0.1
P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2
0.1
0.05 0.02 0.01
Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
Oct,29,2007
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STM8319
Ver 1.0
P-Channel
20 VGS=10V VGS=5V VGS=4.5V 12 VGS=3.5V 8 20 125 C VGS=4V
ID, Drain Current(A)
ID, Drain Current(A)
16
16
12 25 C 8 -55 C 4 0
4
VGS=3V
0 0 0.5 1 1.5 2 2.5 3
0
0.9
1.8
2.7
3.6
4.5
5.4
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
90 75 60 45 30 VGS=-10V 15 1 VGS=-4.5V
Figure 2. Transfer Characteristics
2.0 1.8
RDS(on), On-Resistance Normalized
RDS(on)(m )
1.6 1.4 1.2 1.0 0.8
VGS=-10V ID=-6A
VGS=-4.5V ID=-4.9A
1
4
8
12
16
20
0
25
50
75
100
125
150
T j ( C )
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.2
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ID=-250uA
Vth, Normalized Gate-Source Threshold Voltage
1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75
VDS=VGS ID=-250uA
100 125 150
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation with Temperature 7
Figure 6. Breakdown Voltage Variation with Temperature
Oct,29,2007
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STM8319
Ver 1.0
100 90
20.0
Is, Source-drain current(A)
ID =-6A
10.0
RDS(on)(m )
80 60 125 C 40 20 0 75 C 25 C
125 C
25 C
75 C
1.0
0 2 4 6 8 10
0
0.25
0.5
0.75
1.0
1.25
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VGS, Gate to Source Voltage(V)
1200 1000
C, Capacitance(pF)
8 6 4 2 0 0
VDS =-15 V ID=-6A
800 600 400 200 Crss 0 0 5 10
Ciss
Coss
15
20
25
30
2
4
6
8
10
12
14
16
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
Tr
250
ID, Drain Current(A)
Switching Time(ns)
100 60 10
T D(off) Tf
10
RD
S
(
) ON
L im
it
10
10 s 10 ms 0m s
0u
s
T D(on)
1m
1
V G S =10V S ingle P ulse T c=25 C
DC
1 1
V D S = -15V,I D=-1A V G S = -10 V
0.1 60 100 300 600 0.1
6 10
1
10
100
Rg, Gate Resistance()
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Oct,29,2007
8
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STM8319
Ver 1.0
15V
V(B R )DS S
tp
VDS
L
DR IV E R
RG
20V
D .U .T
IA S tp
+ - VD D
A
0.0 1
IAS
Unclamped Inductive Test Circuit Figure 13a.
Unclamped Inductive Waveforms Figure 13b.
10
Normalized Transient Thermal Resistance
1
0.5 0.2 0.1
P DM t1 t2 1. RthJA (t)=r (t) * R th JA 2. R thJA=See Datasheet 3. TJM-TA = PDM* R thJA (t) 4. Duty Cycle, D=t1/t2
0.1
0.05 0.02 0.01
Single Pulse 0.01 0.00001
0.0001
0.001
0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve
10
100
1000
Oct,29,2007
9
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STM8319
Ver 1.0
PACKAGE OUTLINE DIMENSIONS SO-8
1 L
E D
0.015X45
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
Oct,29,2007
10
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STM8319
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1 D1 P2
A
E1 E2
B0
A0
D0
P0
A
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:
PACKAGE SOP 8N 150 A0
6.50 0.15
B0
5.25 0.10
K0
2.10 0.10
D0
1.5 (MIN)
D1
1.55 0.10
E
12.0 +0.3 - 0.1
E1
1.75 0.10
E2
5.5 0.10
E
P0
8.0 0.10
P1
4.0 0.10
P2
2.0 0.10
T
0.30 0.013
SO-8 Reel
W1
S G N
R H W
UNIT:
V
M
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
12.75 + 0.15
K
S
2.0 0.15
G
R
K V
Oct,29,2007
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