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| AG12A ... AG12M AG12A ... AG12M Silicon Rectifier Cells with Polysiloxane Cover Silizium-Gleichrichterzellen mit Polysiloxan-Abdeckung Version 2007-07-26 Nominal current Nennstrom O 6.8 12 A 50...1000 V 0.3 g Repetitive peak reverse voltage Periodische Spitzensperrspannung Weight approx. - Gewicht ca. O 5.5 Standard packaging bulk Standard Lieferform lose Dimensions - Mae [mm] Maximum ratings Type Typ AG12A AG12B AG12D AG12G AG12J AG12K AG12M Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 400 600 800 1000 TT = 100C f > 15 Hz TA = 25C TA = 25C IFAV IFRM IFSM i2t 2.3 max Grenzwerte Surge peak reverse voltage Stospitzensperrspannung VRSM [V] 80 130 250 450 700 1000 1300 12 A 60 A 1) 500/550 A 1250 A2s -50...+150C -50...+150C Kennwerte Tj = 25C Tj = 25C IF = 12 A VR = VRRM VF IR < 0.95 V < 10 A Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stostrom fur eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Characteristics Forward voltage - Durchlass-Spannung Leakage current - Sperrstrom TS Tj 1 Max. temperature of the cell T = 150C - Max. Temperatur der Zelle T = 150C http://www.diotec.com/ (c) Diotec Semiconductor AG 1 |
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