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PD - 97437A
IRF9310PBF
HEXFET(R) Power MOSFET
VDS RDS(on) max
(@VGS = 10V)
-30 4.6 -20
V m A
6 6 6 *

' ' ' '
ID
(@TA = 25C)
SO-8
Applications
* Charge and Discharge Switch for Notebook PC Battery Application
Features and Benefits
Features Resulting Benefits
Low RDSon ( 4.6m) Industry-Standard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen
Orderable part number IRF9310PBF IRF9310TRPbF Package Type SO8 SO8
Lower Conduction Losses results in Multi-Vendor Compatibility Environmentally Friendlier
Note
Standard Pack Form Quantity Tube/Bulk 95 4000 Tape and Reel
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max.
-30 20 -20 -16 -160 2.5 1.6 0.02 -55 to + 150
Units
V
f f
c
A
W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range
Notes through are on page 2
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1
03/19/2010
IRF9310PBF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge
Min. Typ. Max. Units
-30 --- --- --- -1.3 --- --- --- --- --- 39 --- --- --- --- --- --- --- --- --- --- --- --- --- 0.020 3.9 5.8 -1.8 -5.8 --- --- --- --- --- 58 110 17 28 2.8 25 47 65 70 5250 1300 880 --- --- 4.6 6.8 -2.4 V
Conditions
VGS = 0V, ID = -250A
V/C Reference to 25C, ID = -1mA VGS = -10V, ID = -20A m VGS = -4.5V, ID = -16A
e e
V VDS = VGS, ID = -100A --- mV/C VDS = -24V, VGS = 0V -1.0 A VDS = -24V, VGS = 0V, TJ = 125C -150 -100 100 --- --- 165 --- --- --- --- --- --- --- --- --- --- Typ. --- --- pF nA S nC nC ns VDD = -15V, VGS = -4.5V ID = -1.0A RG = 1.8 See Figs. 20a &20b VGS = 0V VDS = -15V = 1.0MHz Max. 630 -16 Units mJ A VGS = -20V VGS = 20V VDS = -10V, ID = -16A VDS = -15V, VGS = -4.5V, ID = - 16A VGS = -10V VDS = -15V ID = -16A
h Total Gate Charge h
Turn-On Delay Time Rise Time
h Gate-to-Drain Charge h Gate Resistance h
Gate-to-Source Charge Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter
e
Avalanche Characteristics
EAS IAR Single Pulse Avalanche Energy Avalanche Current
Diode Characteristics
Parameter
IS ISM VSD trr Qrr
d
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 71 12 -2.5 A -160 -1.2 107 18 Typ. --- --- V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = -2.5A, VGS = 0V di/dt = 100A/s Max. 20 50
G S D
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
e
TJ = 25C, IF = -2.5A, VDD = -24V
Thermal Resistance
Parameter
RJL RJA Junction-to-Drain Lead Junction-to-Ambient
e
f
g
Units
C/W
Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 4.9mH, RG = 25, IAS = -16A. Pulse width 400s; duty cycle 2%. When mounted on 1 inch square copper board. R is measured at TJ of approximately 90C. For DESIGN AID ONLY, not subject to production testing.
2
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IRF9310PBF
1000 60s PULSE WIDTH Tj = 25C
-ID, Drain-to-Source Current (A)
TOP VGS -10V -4.5V -3.5V -3.1V -2.9V -2.7V -2.5V -2.3V
1000
60s PULSE WIDTH
Tj = 150C
-ID, Drain-to-Source Current (A)
TOP
100
10
BOTTOM
100
BOTTOM
VGS -10V -4.5V -3.5V -3.1V -2.9V -2.7V -2.5V -2.3V
1
10
0.1 -2.3V 0.01 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V)
-2.3V 1 0.1 1 10 100 -V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
Fig 2. Typical Output Characteristics
1.6 ID = -20A VGS = -10V
-I D, Drain-to-Source Current ()
1.4
100
1.2
T J = 150C 10 T J = 25C VDS = -10V 60s PULSE WIDTH 1.0 1 2 3 4 5
1.0
0.8
0.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 4. Normalized On-Resistance vs. Temperature
14.0 ID= -16A
-VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0 VDS= -24V VDS= -15V
C, Capacitance(pF)
10000
Ciss Coss
1000
Crss
100 1 10 -VDS, Drain-to-Source Voltage (V) 100
0
25
50
75
100
125
150
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRF9310PBF
1000.00 1000
-I D, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec
100.00 T J = 150C 10.00
100 1msec 10
1.00
T J = 25C
1
T A = 25C
VGS = 0V 0.10 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -VSD, Source-to-Drain Voltage (V) 0.1 0.1
Tj = 150C Single Pulse 1
10msec
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
20
-V GS(th), Gate threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
2.5
-I D, Drain Current (A)
15
2.0
10
ID = -100A 1.5
5
0 25 50 75 100 125 150 T A , Ambient Temperature (C)
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Ambient Temperature
100
Thermal Response ( Z thJA ) C/W
Fig 10. Threshold Voltage vs. Temperature
10 1 0.1 0.01 0.001
D = 0.50 0.20 0.10 0.05 0.02 0.01
SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 0.001 0.01 0.1 1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 10 100 1000
0.0001 1E-006
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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RDS(on) , Drain-to -Source On Resistance (m)
ID = -20A 10
RDS(on), Drain-to -Source On Resistance ( m)
12
IRF9310PBF
14 12 10 8 6 VGS = -10V 4 2 0 20 40 60 80 100 120 140 160 -I D, Drain Current (A) VGS = -4.5V
8
6
TJ = 125C
4 TJ = 25C 2 2 4 6 8 10 12 14 16 18 20
-V GS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
2700
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical On-Resistance vs. Drain Current
1000
2400 2100 1800 1500 1200 900 600 300 0 25 50 75
Single Pulse Power (W)
ID TOP -1.8A -2.7A BOTTOM -16A
800
600
400
200
100
125
150
0 1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
Starting T J , Junction Temperature (C)
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
Fig 16. Typical Power vs. Time
D.U.T *
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
*
Reverse Polarity of D.U.T for P-Channel
* VGS = 5V for Logic Level Devices
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Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET(R) Power MOSFETs
5
IRF9310PBF
Id Vds Vgs
L
0
DUT
20K 1K
S S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
VDS
L
I AS
RG
-V GS -20V
D.U.T
IAS
DRIVER
0.01
VDD A
tp
tp V(BR)DSS
15V
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
VDS VGS RG
RD
td(on) tr t d(off) tf
D.U.T.
VGS 10%
+
-VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 20a. Switching Time Test Circuit
6
-
V DD
90% VDS
Fig 20b. Switching Time Waveforms
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IRF9310PBF
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
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SO-8 Part Marking Information
@Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S
DIU@SI6UDPI6G S@8UDAD@S GPBP
;;;; )
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRF9310PBF
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification Information
Qualification level
Consumer (per JEDEC JESD47F guidelines) SO-8 Yes MSL1 (per JEDEC J-STD-020D)
Moisture Sensitivity Level RoHS Compliant

Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release.
Date Comment
Figure 16, Power vs. Time curve is modified and updated. All other parameters remain unchanged.
Revision History
3/18/2010
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/2010
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