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| SUR6080PT thru SUR60120PT Ultra Fast Recovery Epitaxial Diodes A C(TAB) A C A C A Dimensions TO-247AD Dim. A B C D E F G H Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 A=Anode, C=Cathode, TAB=Cathode SUR6080PT SUR60100PT SUR60120PT VRSM V 800 1000 1200 VRRM V 800 1000 1200 J K L M N Symbol IFRMS IFAVM IFRM Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 70 30 375 200 210 185 195 200 180 170 160 -40...+150 150 -40...+150 Unit A IFSM TVJ=150oC TVJ=45oC A I2t TVJ=150oC A2s TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque o C 138 0.8...1.2 6 W Nm g SUR6080PT thru SUR60120PT Ultra Fast Recovery Epitaxial Diodes Symbol Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=30A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 750 250 7 2.2 2.55 1.65 18.2 0.9 0.25 35 Unit uA uA mA V V m K/W IR VF VTO rT RthJC RthCK RthJA trr IRM IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC _ VR=350V; IF=30A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C o 40 16 60 18 ns A FEATURES * International standard package JEDEC TO-247AD * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR6080PT thru SUR60120PT Ultra Fast Recovery Epitaxial Diodes 70 A 60 50 IF 40 30 20 10 0 0 1 VF 2 3 V 4 1 0 1 10 -diF/dt 100 A/s 1000 4 TVJ=25C TVJ=100C TVJ=150C Qr 3 2 max. typ. 6 T =100C C VVJ= 540V R 5 IF=30A IF=60A IF=30A IF=15A 50 A 40 IRM TVJ=100C VR= 540V IF=30A IF=60A IF=30A IF=15A max. 30 20 typ. 10 0 0 200 -diF/dt 400 A/s 600 F ig. 1 F orward current vers us voltage drop. 1.4 1.2 1.0 Kf 0.8 0.6 F ig. 2 R ecovery charge vers us -diF /dt. F ig. 3 P eak revers e current vers us -diF /dt. 60 1200 ns 1000 VFR 800 tfr 30 20 600 400 tfr 1.0 s 0.8 TVJ=100C VR=540V V 50 40 VFR IRM trr max. 0.6 IF=30A IF=60A IF=30A IF=15A QR 0.4 0.4 0.2 0.2 0.0 0 40 TJ 80 120 C 160 0.0 0 200 -diF/dt 400 A/s 600 typ. 10 0 0 200 diF/dt TVJ=125C IF=30A 400 A/s 600 200 0 F ig. 4 Dynamic parameters vers us junction temperature. 1.0 K/W 0.8 ZthJC 0.6 F ig. 5 R ecovery time vers us -diF /dt. F ig. 6 P eak forward voltage vers us diF /dt. 0.4 0.2 0.0 0.001 0.01 0.1 t 1 s 10 F ig. 7 T rans ient thermal impedance junction to cas e. |
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