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NJG1138HA8 900MHz Band LNA GaAs MMIC ! GENERAL DESCRIPTION The NJG1138HA8 is a low noise amplifier designed for band 5/6/8 UMTS cellular phone and cellular data modem. The NJG1138HA8 has two gain state which are high gain mode and low gain mode. The NJG1138HA8 features high gain, low noise figure and high IP3. An Ultra-small and thin USB6-A8 package is adopted. ! FEATURES "Low operating voltage "Low control voltage "Low current consumption "High gain "Low noise figure "Input power at 1dB gain compression point "High input IP3 "Small package size "Lead-free and halogen-free ! PIN CONFIGURATION 3 GND ! PACKAGE OUTLINE NJG1138HA8 +2.8V typ. +1.8V typ. 2.3mA typ. @VCTL=1.8V 10A typ. @VCTL=0V 16.0dB typ. @VCTL=1.8V, fRF =942.5MHz 1.4dB typ. @VCTL=1.8V, fRF =942.5MHz -8.5dBm typ. @VCTL=1.8V, fRF =942.5MHz +16.0dBm typ. @VCTL=0V, fRF=942.5MHz 0dBm typ. @VCTL=1.8V, fRF =942.5MHz +14dBm typ. @VCTL=0V, fRF=942.5MHz USB6-A8 (Package size: 1.0mmx1.2mmx0.38mm typ.) RFIN RFOUT 4 13 2 Bias Circuit GND VCTL Logic Circuit Pin Connection 1. VCTL 2. RFOUT 3. GND 4. RFIN 5. GND 6. NC (GND) 5 1 NC(GND) 6 ! TRUTH TABLE "H"=VCTL(H), "L"=VCTL(L) VCTL H L LNA Mode High Gain Mode Low Gain Mode Note: Specifications and description listed in this datasheet are subject to change without notice. Ver.2009-10-01 -1- NJG1138HA8 ! ABSOLUTE MAXIMUM RATINGS Ta=+25C, Zs=Zl=50 PARAMETERS Supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature SYMBOL VDD VCTL PIN PD Topr Tstg CONDITIONS RATINGS 5.0 5.0 +15 UNITS V V dBm mW C C on PCB board, Tjmax=150C 150 -40~+85 -55~+150 ! ELECTRICAL CHARACTERISTICS 1 (DC) PARAMETERS Operating voltage Control voltage (High) Control voltage (Low) Operating current1 (High Gain Mode) Operating current2 (Low Gain Mode) Control current SYMBOL VDD VCTL(H) VCTL(L) IDD1 IDD2 ICTL VCTL terminal VCTL terminal RF OFF, VCTL=1.8V RFOFF, VCTL=0V RF OFF, VCTL=1.8V CONDITIONS (General Conditions: VDD=2.8V, Ta=+25oC) MIN 2.5 1.36 0 - TYP 2.8 1.8 0 2.3 10 5.5 MAX 3.6 3.6 0.3 4.0 45 8.5 UNITS V V V mA A A -2- NJG1138HA8 ! ELECTRICAL CHARACTERISTICS 2 (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) PARAMETERS Small signal gain 1 Noise figure 1 Input power at 1dB gain compression point 1 3rd order Input Intercept Point 1 RF IN VSWR 1 RF OUT VSWR 1 SYMBOL Gain1 NF1 P-1dB(IN)1 IIP3_1 VSWRI 1 VSWRo1 f1=fRF, f2=fRF+100kHz, Pin=-30dBm CONDITIONS Exclude PCB and connector losses (input: 0.07dB, output: 0.07dB) Exclude PCB and connector losses (input:0.07dB) MIN 14.5 -16.0 -7.0 - TYP 16.0 1.4 -8.5 0 1.8 MAX 17.5 1.7 2.3 UNITS dB dB dBm dBm - 2.2 2.7 ! ELECTRICAL CHARACTERISTICS 3 (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) PARAMETERS Small signal gain 2 Noise figure 2 Input power at 1dB gain compression point 1 3rd order Input Intercept Point 2 RF IN VSWR 2 RF OUT VSWR 2 SYMBOL Gain2 NF2 P-1dB(IN)2 IIP3_2 VSWRI 2 VSWRo2 f1=fRF, f2=fRF+100kHz, Pin=-20dBm CONDITIONS Exclude PCB and connector losses (input: 0.07dB, output: 0.07dB) Exclude PCB and connector losses (input:0.07dB) MIN -4.5 +4.5 +2.0 - TYP -3.0 3.0 +16.0 +14.0 1.4 MAX -2.0 6.0 2.0 2.2 UNITS dB dB dBm dBm - 1.6 -3- NJG1138HA8 ! TERMINAL INFORMATION No. 1 2 3 4 5 6 SYMBOL VCTL RFOUT GND RFIN GND NC (GND) DESCRIPTION Gain control port. Inputting a logic-high, the LNA turn at high gain mode. Inputting a logic-low, the LNA turn at low gain mode. RF output terminal. Requires an external matching components. This terminal should be connected a DC blocking capacitor C1. Ground terminal. Connect to the PCB ground plane. RF input terminal. Requires an external matching components. Ground terminal. Connect to the PCB ground plane. No connected terminal. This terminal is not connected with internal circuit. Connect to the PCB ground plane. Notes: Ground terminal (No.3 and 5) and NC terminal (No.6) should be connected with the PCB ground for good RF performance. -4- NJG1138HA8 ! ELECTRICAL CHARACTERISTICS (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) Pout vs. Pin (f=942.5MHz) 10 20 Gain, IDD vs. Pin (f=942.5MHz) 10 5 15 0 Gain 8 Pout (dBm) Gain (dB) -5 -10 5 4 Pout -15 0 -20 P-1dB(IN)=-7.7dBm -25 -40 -30 -20 -10 0 10 -5 -40 IDD 2 P-1dB(IN)=-7.7dBm 0 -30 -20 -10 0 10 Pin (dBm) Pout, IM3 vs. Pin (f1=942.5MHz, f2=f1+100kHz) 20 Pin (dBm) OIP3, IIP3 vs. frequency (f1=900~1000MHz, f2=f1+100kHz, Pin=-30dBm) 18 17 6 5 4 0 Pout 16 Pout, IM3 (dBm) OIP3 (dBm) -20 -40 14 13 12 11 2 1 -60 IM3 -80 IIP3 0 -1 -2 1000 IIP3=-0.4dBm -100 -40 -30 -20 -10 0 10 Pin (dBm) 10 900 920 940 960 980 frequency (MHz) k factor vs. frequency (f=50MHz~20GHz) NF, Gain vs. frequency (f=800~1100MHz) 4 3.5 3 20 18 20 Gain 16 14 12 15 NF (dB) 2.5 2 1.5 1 0.5 (Exclude PCB, Connector Losses) Gain (dB) k factor 10 NF 10 8 6 4 1100 5 0 800 850 900 950 1000 1050 0 0 5 10 15 20 frequency (MHz) frequency (GHz) -5- IIP3 (dBm) 15 OIP3 3 IDD (mA) 10 6 NJG1138HA8 ! ELECTRICAL CHARACTERISTICS (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) Gain, NF vs. VDD (f=942.5MHz) 18 17 16 15 14 13 12 11 (Exclude PCB, Connector Losses) 10 2 2.5 3 3.5 4 0 4.5 -10 2 2.5 3 3.5 4 4.5 4 3.5 -2 -3 -4 P-1dB(IN) vs. VDD (f=942.5MHz) Gain (dB) 2.5 2 P-1dB(IN) (dBm) Gain 3 -5 -6 -7 -8 -9 NF (dB) NF 1.5 1 0.5 P-1dB(IN) VDD (V) OIP3, IIP3 vs. VDD (f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm) 19 18 17 5 4 3 4 3.5 VDD (V) VSWRi, VSWRo vs. VDD (f=942.5MHz) VSWRo 3 16 15 14 13 12 11 2 OIP3 IIP3 (dBm) 2 1 0 -1 -2 -3 4.5 VSWRi, VSWRo OIP3 (dBm) 2.5 2 1.5 1 0.5 0 2 2.5 3 3.5 4 4.5 IIP3 VSWRi 2.5 3 3.5 4 VDD (V) IDD vs. VDD (RF OFF) 4 3.5 3 2.5 VDD (V) IDD (mA) IDD 2 1.5 1 0.5 0 2 2.5 3 3.5 4 4.5 VDD (V) -6- NJG1138HA8 ! ELECTRICAL CHARACTERISTICS (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , with application circuit) Gain, NF vs. Temperature (f=942.5MHz) 19 18 17 16 15 14 13 12 (Exclude PCB, Connector Losses) 11 -60 -40 -20 0 20 40 o 60 80 0 100 -16 -60 -40 -20 0 20 40 60 80 100 4 3.5 0 -2 -4 P-1dB(IN) vs. Temperature (f=942.5MHz) Gain 3 2.5 2 1.5 1 0.5 P-1dB(IN) (dBm) P-1dB(IN) -6 -8 -10 -12 -14 Gain (dB) NF NF (dB) Temperature ( C) OIP3, IIP3 vs. Temperature (f1=942.5MHz, f2=f1+100kHz, Pin=-30dBm) 18 17 16 4 3 2 4 3.5 Temperature (oC) VSWRi, VSWRo vs. Temperature (f=942.5MHz) VSWRo 3 OIP3 (dBm) OIP3 15 14 13 12 11 10 -60 0 -1 IIP3 (dBm) 1 VSWRi, VSWRo 2.5 2 1.5 1 0.5 0 -60 VSWRi IIP3 -2 -3 -4 100 -40 -20 0 20 Temperature ( C) IDD vs. Temperature (RF OFF) 4 3.5 3 2.5 40 o 60 80 -40 -20 0 20 40 60 80 100 Temperature (oC) IDD (mA) IDD 2 1.5 1 0.5 0 -60 -40 -20 0 20 Temperature ( C) 40 o 60 80 100 -7- NJG1138HA8 ! ELECTRICAL CHARACTERISTICS (High Gain Mode) (General Conditions: VDD=2.8V, VCTL=1.8V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) -8- NJG1138HA8 ! ELECTRICAL CHARACTERISTICS (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) Pout vs. Pin (f=942.5MHz) 20 -2 Gain, IDD vs. Pin (f=942.5MHz) 240 Gain 10 -4 200 0 Pout (dBm) -6 160 Gain (dB) -10 -8 120 -20 -10 -30 80 Pout -12 40 P-1dB(IN)=+16.1dBm 0 -30 -20 -10 0 10 20 -40 P-1dB(IN)=+16.1dBm -50 -40 -30 -20 -10 0 10 20 IDD -14 -40 Pin (dBm) Pout, IM3 vs. Pin (f1=942.5MHz, f2=f1+100kHz) 20 Pin (dBm) OIP3, IIP3 vs. Pin (f1=900~1000MHz, f2=f1+100kHz, Pin=-20dBm) 16 24 0 14 OIP3 22 Pout, IM3 (dBm) -20 -40 10 18 -60 8 16 IIP3 -80 IM3 IIP3=+16.7dBm -100 -40 -30 -20 -10 0 10 20 6 14 Pin (dBm) 4 900 920 940 960 980 12 1000 NF, Gain vs. frequency (f=800~1100MHz) 10 -2 20 frequency (MHz) k factor vs. frequency (f=50MHz~20GHz) 8 Gain -4 15 k factor 6 -6 Gain (dB) NF (dB) 10 4 NF -8 2 (Exclude PCB, Connector Losses) -10 5 0 800 850 900 950 1000 1050 -12 1100 0 0 5 10 15 20 frequency (MHz) frequency (GHz) -9- IIP3 (dBm) Pout OIP3 (dBm) 12 20 IDD (uA) NJG1138HA8 ! ELECTRICAL CHARACTERISTICS (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) Gain, NF vs. VDD (f=942.5MHz) 2 1 0 -1 -2 -3 6 5 20 19 18 P-1dB(IN) vs. VDD (f=942.5MHz) NF 4 3 P-1dB(IN) (dBm) Gain (dB) 17 NF (dB) P-1dB(IN) 16 15 14 13 12 2 2.5 3 3.5 4 4.5 2 1 Gain -4 -5 (Exclude PCB, Connector Losses) -6 2 2.5 3 3.5 4 -2 4.5 0 -1 VDD (V) OIP3, IIP3 vs. VDD (f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm) 24 22 20 20 18 4 3.5 3 VDD (V) VSWRi, VSWRo vs. VDD (f=942.5MHz) VSWRi, VSWRo IIP3 16 VSWRo OIP3 (dBm) 18 16 IIP3 (dBm) 14 12 2.5 2 1.5 OIP3 14 12 10 8 2 2.5 3 3.5 4 10 8 6 4 4.5 VSWRi 1 0.5 0 2 2.5 3 3.5 4 4.5 VDD (V) IDD vs. VDD (RF OFF) 18 16 14 12 VDD (V) IDD (uA) 10 8 6 4 2 2 IDD 2.5 3 3.5 4 4.5 VDD (V) - 10 - NJG1138HA8 ! ELECTRICAL CHARACTERISTICS (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , with application circuit) Gain, NF vs. Temperature (f=942.5MHz) -1 -2 -3 -4 -5 -6 -7 -8 (Exclude PCB, Connector Losses) -9 -60 -40 -20 0 20 40 o 60 80 1 100 6 -60 -40 -20 0 20 40 60 80 100 9 8 22 20 18 P-1dB(IN) vs. Temperature (f=942.5MHz) P-1dB(IN) (dBm) Gain 7 6 Gain (dB) 16 14 12 10 8 P-1dB(IN) 5 4 3 2 NF NF (dB) Temperature ( C) OIP3, IIP3 vs. Temperature (f1=942.5MHz, f2=f1+100kHz, Pin=-20dBm) 24 22 20 20 18 16 4 3.5 3 Temperature (oC) VSWRi, VSWRo vs. Temperature (f=942.5MHz) VSWRo VSWRi, VSWRo OIP3 (dBm) 18 16 14 12 10 8 -60 IIP3 IIP3 (dBm) 14 12 2.5 2 1.5 OIP3 10 8 6 4 100 VSWRi 1 0.5 0 -60 -40 -20 0 20 1 Temperature ( C) IDD vs. Temperature (RF OFF) 18 16 14 12 40 o 60 80 -40 -20 0 20 Temperature ( C) 40 o 60 80 100 IDD (uA) 10 8 6 4 2 -60 IDD -40 -20 0 20 40 60 80 100 Temperature (oC) - 11 - NJG1138HA8 ! ELECTRICAL CHARACTERISTICS (Low Gain Mode) (General Conditions: VDD=2.8V, VCTL=0V, fRF=942.5MHz, Zs=Zl=50 , Ta=+25oC, with application circuit) S11, S22 S21, S12 VSWR Zin, Zout S11, S22 (f=50MHz~20GHz) S21, S12 (f=50MHz~20GHz) - 12 - NJG1138HA8 ! APPLICATION CIRCUIT (Top View) 3 GND RFIN L2 8.2nH RFIN 13 4 RFOUT 2 L3 10nH Bias Circuit Logic Circuit C2 0.01uF VCTL 1 VCTL C1 2pF RF OUT L1 12nH VDD GND 5 NC(GND) 6 1Pin Index ! TEST PCB LAYOUT (Top View) Parts ID L1, L2 VDD C2 RF IN L2 L1 L3 C1 RF OUT Comments Murata LQP03T Series TDK MLK0603 Series Murata GRM03 Series L3 C1, C2 PCB (FR-4): t=0.2mm MICROSTRIP LINE WIDTH =0.4mm (Z0=50ohm) PCB SIZE=17.0mm x 17.0mm VCTL - 13 - NJG1138HA8 ! PACKAGE OUTLINE (USB6-A8) 0.380.06 +0.012 0.038-0.009 S 0.03 S TERMINAL TREAT Substrate Molding material UNIT WEIGHT :Au :Glass epoxy :Epoxy resin :mm :1.1mg 0.2 (MIN0.15) 6 5 1.20.05 0.20.04 C0.1 R0.05 1 0.10.05 Photo resist coating 0.8 0.4 0.6 4 3 0.4 1.00.05 2 0.20.07 0.20.04 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - 14 - |
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