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| SPD30P06P G SIPMOS (R) Power-Transistor Features * Product Summary Drain source voltage Drain-source on-state resistance Continuous drain current P-Channel Enhancement mode Avalanche rated dv/dt rated 175C operating temperature VDS RDS(on) ID -60 0.075 -30 V * * * * W A Pb-free lead plating; RoHS compliat Type SPD30P06P G Package PG-TO252-3 Pin 1 G PIN 2/4 D PIN 3 S Maximum Ratings,at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value -30 -21.5 Unit A ID T C = 25 C T C = 100 C Pulsed drain current I D puls EAS EAR dv/dt -120 250 12.5 6 kV/s mJ T C = 25 C Avalanche energy, single pulse I D = -30 A , V DD = -25 V, RGS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt I S = -30 A, V DS = -48 V, di/dt = 200 A/s, T jmax = 175 C Gate source voltage Power dissipation VGS Ptot T j , T stg 20 125 -55...+175 55/175/56 V W C T C = 25 C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev 2.3 Page 1 2008-09-02 SPD30P06P G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. Values typ. max. 1.2 100 75 50 K/W Unit RthJC RthJA RthJA - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Static Characteristics Drain- source breakdown voltage Symbol min. Values typ. -3 max. -4 A -0.1 -10 -10 0.069 -1 -100 -100 0.075 nA V Unit V(BR)DSS VGS(th) IDSS -60 -2.1 VGS = 0 V, I D = -250 A Gate threshold voltage, VGS = VDS I D = -1.7 mA Zero gate voltage drain current VDS = -60 V, V GS = 0 V, T j = 25 C VDS = -60 V, V GS = 0 V, T j = 150 C Gate-source leakage current IGSS RDS(on) - VGS = -20 V, VDS = 0 V Drain-source on-state resistance W VGS = -10 V, I D = -21.5 A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Rev 2.3 Page 2 2008-09-02 SPD30P06P G Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Input capacitance Values typ. max. Unit VDS2*I D*RDS(on)max , ID = -21.5 A VGS = 0 V, V DS = -25 V, f = 1 MHz Output capacitance gfs Ciss Coss Crss t d(on) 5.2 - 10.4 1228 387 142 13 1535 383 177 19.5 S pF VGS = 0 V, V DS = -25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, V DS = -25 V, f = 1 MHz Turn-on delay time ns VDD = -30 V, V GS = -10 V, ID = -21.5 A, RG = 1.6 W Rise time tr - 11 16.5 VDD = -30 V, V GS = -10 V, ID = -21.5 A, RG = 1.6 W Turn-off delay time t d(off) - 30 45 VDD = -30 V, V GS = -10 V, ID = -21.5 A, RG = 1.6 W Fall time tf - 20 30 VDD = -30 V, V GS = -10 V, ID = -21.5 A, RG = 1.6 W Rev 2.3 Page 3 2008-09-02 SPD30P06P G Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Gate to source charge Values typ. max. Unit Q gs Q gd Qg V(plateau) - 3.7 13.8 32 -5.2 5.6 20.7 48 - nC VDD = -48 V, ID = -30 A Gate to drain charge VDD = -48 V, ID = -30 A Gate charge total VDD = -48 V, ID = -30 A, V GS = 0 to -10 V Gate plateau voltage V VDD = -48 V , I D = -30 A Parameter Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. -1.3 64.6 153 max. -30 -120 -1.7 97 230 Unit IS ISM VSD trr Qrr - A T C = 25 C Inverse diode direct current,pulsed T C = 25 C Inverse diode forward voltage V ns nC VGS = 0 V, I F = -30 Reverse recovery time VR = -30 V, IF=I S , di F/dt = 100 A/s Reverse recovery charge VR = -30 V, IF=l S , diF/dt = 100 A/s Rev 2.3 Page 4 2008-09-02 SPD30P06P G Power dissipation Drain current parameter: VGS 10 V SPD30P06P Ptot = f (TC) SPD30P06P ID = f (TC ) -32 140 W A 120 110 -24 100 Ptot 80 70 60 50 40 -8 30 20 10 0 0 20 40 60 80 100 120 140 160C 190 0 0 20 40 60 80 100 120 140 160C 190 -4 -12 -16 TC ID 90 -20 TC Safe operating area Transient thermal impedance I D = f ( VDS ) parameter : D = 0 , T C = 25 C -10 3 ZthJC = f (tp ) parameter : D = tp /T 10 1 SPD30P06P SPD30P06P K/W A tp = 31.0s 10 0 -10 2 Z thJC 100 s 10 -1 ID 10 -2 D = 0.50 /I D 0.20 10 1 ms -3 = -10 V 1 DS 0.10 0.05 single pulse 0.02 0.01 R DS ( on ) 10 ms 10 -4 DC -10 0 -1 -10 0 1 -10 -10 V -10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev 2.3 Page 5 tp 2008-09-02 SPD30P06P G Typ. output characteristic Typ. drain-source-on-resistance I D = f (VDS); T j=25C parameter: tp = 80 s SPD30P06P RDS(on) = f (ID ) parameter: VGS SPD30P06P -75 Ptot = 125.00W VGS [V] a b c 0.26 A k j -4.0 -4.5 -5.0 -5.5 -6.0 -6.5 -7.0 -7.5 -8.0 -9.0 -10.0 W c d e f g h i 0.22 0.20 -60 -55 -50 i RDS(on) d e 0.18 0.16 0.14 0.12 0.10 0.08 j k ID -45 -40 -35 -30 -25 -20 -15 -10 -5 0 0 a c b e f g h f g h i j k 0.06 d 0.04 V [V] = GS 0.02 c d e f -5.0 -5.5 -6.0 -6.5 g h i j k -7.0 -7.5 -8.0 -9.0 -10.0 -2 -4 -6 -8 -10 V -13 0.00 0 -10 -20 -30 -40 A -60 VDS ID Typ. transfer characteristics I D= f ( V GS ) VDS 2 x I D x RDS(on)max parameter: tp = 80 s -60 Typ. forward transconductance gfs = f(ID); Tj=25C parameter: gfs 13 S A 11 10 -40 9 gfs V ID 8 7 -30 6 5 -20 4 3 -10 2 1 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -10 0 0 -1 -2 -3 -4 -5 -6 -7 -8 A -10 VGS Rev 2.3 Page 6 ID 2008-09-02 SPD30P06P G Drain-source on-state resistance Gate threshold voltage RDS(on) = f (Tj) parameter : I D = -21.5 A, VGS = -10 V SPD30P06P VGS(th) = f (Tj) parameter: VGS = VDS , ID = -1.7 mA -5.0 W RDS(on) 0.24 V 98% 0.20 -4.0 V GS(th) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 -3.5 typ -3.0 -2.5 98% typ -2.0 -1.5 -1.0 2% 0.04 0.02 0.00 -60 -20 20 60 100 140 C 200 -0.5 0.0 -60 -20 20 60 100 C 180 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) parameter: VGS=0V, f=1 MHz 10 4 IF = f (VSD ) parameter: Tj , tp = 80 s -10 3 SPD30P06P A pF -10 2 10 3 Ciss IF -10 1 C Coss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) -10 0 0.0 -2.4 V Crss 10 2 0 -5 -10 -15 -20 -25 V -35 -0.4 -0.8 -1.2 -1.6 -2.0 -3.0 VDS Rev 2.3 Page 7 VSD 2008-09-02 SPD30P06P G Avalanche energy Typ. gate charge EAS = f (Tj) 260 para.: I D = -30 A , VDD = -25 V, RGS = 25 W mJ VGS = f (QGate ) parameter: ID = -30 A pulsed SPD30P06P -16 V 220 200 -12 E AS VGS 180 160 140 -10 0,2 VDS max -8 0,8 VDS max 120 100 80 60 40 20 0 25 45 65 85 105 125 145 -4 -6 -2 C 185 Tj 0 0 10 20 30 40 nC 55 QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD30P06P -72 V -68 -66 -64 -62 -60 -58 -56 -54 -60 V(BR)DSS -20 20 60 100 140 C 200 Tj Rev 2.3 Page 8 2008-09-02 SPD30P06P G Package outline: PG-TO252-3 Rev 2.3 page 9 2008-09-02 SPD30P06P G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 Page 10 2008-09-02 |
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