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| BSP135 SIPMOS(R) Small-Signal-Transistor Features * N-channel * Depletion mode * dv /dt rated * Available with V GS(th) indicator on reel * Pb-free lead plating; RoHS compliant * Qualified according to AEC Q101 Product Summary V DS R DS(on),max I DSS,min 600 60 0.02 V A PG-SOT223 Type BSP135 BSP135 Package PG-SOT22 PG-SOT22 Tape and Reel Information L6327: 1000 pcs/reel Marking BSP135 Packaging Non dry Non dry L6906: 1000 pcs/reel inVGSth bands 1) BSP135 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 C T A=70 C Pulsed drain current I D,pulse T A=25 C I D=0.12 A, V DS=20 V, di /dt =200 A/s, T j,max=150 C Value 0.12 0.10 0.48 Unit A Reverse diode dv /dt dv /dt 6 kV/s Gate source voltage ESD Class (JESD22-A114-HBM) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) V GS 20 V 1A (>250V, <500V) P tot T j, T stg T A=25 C 1.8 -55 ... 150 55/150/56 W C see table on next page and diagram 11 Rev. 1.31 page 1 2010-07-19 BSP135 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point (pin 4) SMD version, device on PCB R thJS R thJA minimal footprint 6 cm2 cooling area2) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source cutoff current V (BR)DSS V GS=-3 V, I D=250 A V GS(th) I D(off) V DS=3 V, I D=94 A V DS=600 V, V GS=-3 V, T j=25 C V DS=600 V, V GS=-3 V, T j=125 C Gate-source leakage current On-state drain current Drain-source on-state resistance I GSS I DSS R DS(on) V GS=20 V, V DS=0 V V GS=0 V, V DS=10 V V GS=0 V, I D=0.01A V GS=10 V, I D=0.12 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=0.1 A 600 -2.1 -1.4 -1 0.1 A V 25 115 70 K/W Values typ. max. Unit 20 0.08 30 25 0.16 10 100 60 45 S nA mA Threshold voltage V GS(th) sorted in bands3) J K L M N 2) V GS(th) V DS=3 V, I D=94 A -1.2 -1.35 -1.5 -1.65 -1.8 - -1 -1.15 -1.3 -1.45 -1.6 V 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific band cannot be ordered separately. Rev. 1.31 page 2 2010-07-19 BSP135 Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr T A=25 C V GS=-3 V, I F=0.12 A, T j=25 C V R=300 V, I F=0.1 A, di F/dt =100 A/s 0.78 87 70 0.12 0.48 1.2 130 104 V ns nC A Q gs Q gd Qg V plateau V DD=400 V, I D=0.1 A, V GS=-3 to 5 V 0.24 2.0 3.7 0.20 0.36 3.0 4.9 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=300 V, V GS=-3...5 V, I D=0.1 A, R G=6 V GS=-3 V, V DS=25 V, f =1 MHz 98 8.5 3.4 5.4 5.6 28 182 146 13 5.1 8.1 8.4 42 273 ns pF Values typ. max. Unit Rev. 1.31 page 3 2010-07-19 BSP135 1 Power dissipation P tot=f(T A) 2 Drain current I D=f(T A); V GS10 V 2 0.15 1.5 0.1 P tot [W] 1 I D [A] 0.05 0 0 40 80 120 160 0 40 80 120 160 0.5 0 T A [C] T A [C] 3 Safe operating area I D=f(V DS); T A=25 C; D =0 parameter: t p 100 10 s limited by on-state resistance 100 s 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 102 0.5 10-1 1 ms Z thJA [K/W] 0.2 I D [A] 10 ms 101 0.1 0.05 single pulse 0.02 10-2 DC 0.01 10-3 10 0 100 10 1 10 2 10 3 10-4 10-3 10-2 10-1 100 101 102 V DS [V] t p [s] Rev. 1.31 page 4 2010-07-19 BSP135 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 0.25 V 10 V1 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 100 -0.2 V -0.1 V 0V 0.1 V 0.2 V 0.5 V 0.2 V 0.5 80 V 0.2 0.1 V 0.1 V0 V 0.1V 0.2- R DS(on) [] 0.15 60 I D [A] 40 1V 0.05 20 10 V 0 0 2 4 6 8 10 0 0 0.04 0.08 0.12 0.16 0.2 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max 8 Typ. forward transconductance g fs=f(I D); T j=25 C 0.25 0.2 0.2 0.15 0.15 g fs [S] 0.1 0.05 0 -2 -1 0 1 I D [A] 0.1 0.05 0 0.00 0.04 0.08 0.12 V GS [V] I D [A] Rev. 1.31 page 5 2010-07-19 BSP135 9 Drain-source on-state resistance R DS(on)=f(T j); I D=0.01 A; V GS=0 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V DS=3 V; I D=94 A parameter: I D 160 0 140 -0.5 120 -1 %98 100 R DS(on) [] V GS(th) [V] 80 %98 -1.5 typ 60 -2 40 typ %2 20 -2.5 0 -60 -20 20 60 100 140 180 -3 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Threshold voltage bands I D=f(V GS); V DS=3 V; T j=25 C 12 Typ. capacitances C =f(V DS); V GS=-3 V; f =1 MHz 101 103 N M L K J 10 0 102 Ciss I D [mA] 10-1 94 A C [pF] 101 Coss Crss 10-2 -2 -1.5 -1 -0.5 100 0 10 20 30 V GS [V] V DS [V] Rev. 1.31 page 6 2010-07-19 BSP135 13 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 100 15 Typ. gate charge V GS=f(Q gate); I D=0.1 A pulsed parameter: V DD 8 0.5 VDS(max) 0.2 VDS(max) 6 0.8 VDS(max) 10-1 25 C 150 C 150 C, 98% 4 V GS [V] 2 25 C, 98% I F [A] 2 10-2 0 -2 10-3 0 0.5 1 V SD [V] 1.5 -4 0 1 2 3 4 5 Q gate [nC] 16 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=250 A 700 660 V BR(DSS) [V] 620 580 540 500 -60 -20 20 60 100 140 180 T j [C] Rev. 1.31 page 7 2010-07-19 BSP135 Package Outline: Footprint: Packaging: Dimensions in mm Rev. 1.31 page 8 2010-07-19 BSP135 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.31 page 9 2010-07-19 |
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