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| Rev. 2.1 BSP89 SIPMOS O Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS RDS(on) ID 240 6 0.35 PG-SOT223 4 V W A * Pb-free lead plating; RoHS compliant 4.5V rated * ee lead plating; RoHS compliant Qualified according to AEC Q101 3 2 1 VPS05163 Type BSP89 Package PG-SOT223 Tape and Reel Information L6327: 1000 pcs/reel Marking BSP89 Packaging Non dry Maximum Ratings, at Tj = 25 C, unless otherwise specified Symbol Parameter Continuous drain current TA=25C TA=70C Value 0.35 0.28 Unit A ID Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg 1.4 6 20 1A (>250V, <500V) 1.8 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=0.35A, V DS=192V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD class (JESD22-A114-HBM) Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2009-08-18 Rev. 2.1 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP89 Symbol min. RthJS RthJA 115 70 Values typ. max. 25 K/W Unit Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0, ID=250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 240 0.8 Values typ. 1.4 max. 1.8 Unit V Gate threshold voltage, VGS = VDS ID=108A Zero gate voltage drain current V DS=240V, VGS=0, Tj=25C V DS=240V, VGS=0, Tj=150C A 4.9 4.2 0.1 10 10 7.5 6 nA W Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, ID=0.32A Drain-source on-state resistance V GS=10V, ID=0.35A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2009-08-18 Rev. 2.1 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr V GS=0, IF = IS V R=120V, IF=lS, di F/dt=100A/s BSP89 Values min. typ. 0.36 80 11.2 5.2 4 3.5 15.9 18.4 max. 140 16.8 7.8 6 5.3 23.8 27.6 ns S pF Unit Symbol Conditions g fs Ciss Coss Crss td(on) tr td(off) tf Q gs Q gd Qg V DS2*I D*RDS(on)max, ID=0.28A V GS=0, VDS=25V, f=1MHz 0.18 - V DD=120V, V GS=10V, ID=0.35A, R G=6W V DD=192V, ID=0.35A - 0.2 2 4.3 3.1 0.3 3 6.4 - nC V DD=192V, ID=0.35A, V GS=0 to 10V V(plateau) V DD=192V, ID = 0.35 A IS V TA=25C - 0.85 67 123 0.35 1.4 1.2 100 184 A V ns nC Page 3 2009-08-18 Rev. 2.1 1 Power dissipation Ptot = f (TA) 1.9 BSP89 BSP89 2 Drain current ID = f (TA) parameter: V GS 10 V 0.38 BSP89 W 1.6 1.4 A 0.32 0.28 Ptot 1 0.8 0.6 0.4 0.2 0 0 ID C 1.2 0.24 0.2 0.16 0.12 0.08 0.04 0 0 20 40 60 80 100 120 160 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TA = 25 C 10 1 BSP89 4 Transient thermal impedance ZthJA = f (tp) parameter : D = t p/T 10 2 BSP89 A tp = 160.0s K/W 10 0 o S( n) /ID 1 ms RD 10 -1 10 ms ZthJA 10 0 = VD S 10 1 ID D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -2 DC 10 -1 single pulse 10 -3 0 10 10 1 10 2 V 10 3 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 4 tp 2009-08-18 Rev. 2.1 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 0.6 BSP89 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 9 A RDS(on) W 7 0.4 6 5 ID 0.3 4 0.2 0.1 3V 3.4V 3.6V 4.2V 4.6V 5V 6V 10V 0.5 1 1.5 2 2.5 3 3.5 4 3 2 1 0 0 3V 3.4V 3.6V 4.2V 4.6V 5V 6V 10V 0.1 0.2 0.3 0.4 0 0 V VDS 5 A ID 0.6 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 0.6 8 Typ. forward transconductance g fs = f(ID) parameter: Tj = 25 C 0.6 A S 0.3 g fs 0.5 1 1.5 2 2.5 3.5 0.4 0.4 ID 0.3 0.2 0.2 0.1 0.1 0 0 V 0 0 0.1 0.2 0.3 0.4 A ID 0.6 VGS Page 5 2009-08-18 Rev. 2.1 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 0.35 A, VGS = 10 V W 30 BSP89 BSP89 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS; ID =108A 2.2 V 24 1.8 98% RDS(on) 22 20 18 16 14 12 10 8 6 4 2 0 -60 -20 20 60 100 C VGS(th) 1.6 1.4 1.2 1 0.8 2% typ. 98% typ 0.6 0.4 0.2 180 0 -60 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 1 BSP89 pF A 10 2 C Ciss 10 0 Coss 10 1 IF Crss 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 V 30 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2009-08-18 Rev. 2.1 13 Typ. gate charge VGS = f (QG ); parameter: VDS , ID = 0.35 A pulsed, Tj = 25 C 16 V BSP89 BSP89 14 Drain-source breakdown voltage V(BR)DSS = f (Tj) 291 BSP89 V 12 V(BR)DSS 0.2 VDS max 0.5 VDS max nC 276 271 266 261 256 251 246 241 VGS 10 8 6 0.8 VDS max 4 236 231 2 226 221 0 0 1 2 3 4 5 6.5 216 -60 -20 20 60 100 C 180 QG Tj Page 7 2009-08-18 Rev. 2.1 BSP89 Page 8 2009-08-18 |
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