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Freescale Semiconductor Technical Data Document Number: MRFG35003AN Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications. * Typical Single - Carrier W - CDMA Performance: VDD = 12 Volts, IDQ = 55 mA, Pout = 300 mWatts Avg., 3550 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 10.8 dB Drain Efficiency -- 24.5% ACPR @ 5 MHz Offset -- - 43 dBc in 3.84 MHz Channel Bandwidth * 3 Watts P1dB @ 3550 MHz, CW * Excellent Phase Linearity and Group Delay Characteristics * High Gain, High Efficiency and High Linearity * RoHS Compliant * In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MRFG35003ANT1 3.5 GHz, 3 W, 12 V POWER FET GaAs PHEMT CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Table 1. Maximum Ratings Rating Drain- Source Voltage Gate- Source Voltage RF Input Power Storage Temperature Range Channel Temperature (1) Symbol VDSS VGS Pin Tstg Tch Value 15 -5 29 - 65 to +150 175 Unit Vdc Vdc dBm C C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (2) 15.9 Unit C/W 1. For reliable operation, the operating channel temperature should not exceed 150C. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2007 - 2009. All rights reserved. MRFG35003ANT1 1 RF Device Data Freescale Semiconductor Table 3. ESD Protection Characteristics Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C Table 5. Electrical Characteristics (TA = 25C unless otherwise noted) Characteristic Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) Off State Leakage Current (VGS = - 0.4 Vdc, VDS = 0 Vdc) Off State Drain Current (VDS = 12 Vdc, VGS = - 2.5 Vdc) Off State Current (VDS = 28.5 Vdc, VGS = - 2.5 Vdc) Gate- Source Cut - off Voltage (VDS = 3.5 Vdc, IDS = 6.5 mA) Quiescent Gate Voltage (VDS = 12 Vdc, ID = 80 mA) Symbol IDSS IGSS IDSO IDSX VGS(th) VGS(Q) Min -- -- -- -- - 1.2 - 1.2 Typ 1.3 <1 -- 2 - 0.9 - 0.9 Max -- 100 450 7 - 0.7 - 0.7 Unit Adc Adc Adc mAdc Vdc Vdc Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 55 mA, Pout = 300 mWatts Avg., f = 3550 MHz, Single- Carrier W - CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Gps hD ACPR 9.5 22 -- 10.8 24.5 - 43 -- -- - 40 dB % dBc Typical RF Performance (In Freescale Test Fixture, 50 ohm system) VDD = 12 Vdc, IDQ = 55 mA, f = 3550 MHz Output Power, 1 dB Compression Point, CW P1dB -- 3 -- W MRFG35003ANT1 2 RF Device Data Freescale Semiconductor VBIAS C6 C10 C9 C8 C7 C5 C4 R1 C14 C13 C24 C11 C12 Z13 Z11 Z12 C23 Z19 C20 C21 C22 C15 C16 C17 C18 C19 VSUPPLY C2 RF INPUT Z1 C1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 C3 Z9 Z10 RF OUTPUT Z14 Z15 Z16 Z17 Z18 Z1, Z19 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9, Z13 0.044 x 0.125 Microstrip 0.044 x 0.050 Microstrip 0.044 x 0.242 Microstrip 0.704 x 0.128 Microstrip 0.142 x 0.121 Microstrip 0.885 x 0.075 Microstrip 0.029 x 0.434 Microstrip 0.029 x 0.146 x 0.130 Taper 0.015 x 0.527 Microstrip Z10 Z11 Z12 Z14 Z15 Z16 Z17 Z18 PCB 0.146 x 0.170 Microstrip 0.146 x 0.070 Microstrip 0.146 x 0.459 x 0.130 Taper 0.459 x 0.537 Microstrip 0.347 x 0.186 Microstrip 0.627 x 0.076 Microstrip 0.044 x 0.075 Microstrip 0.044 x 0.276 Microstrip Rogers 4350, 0.020, r = 3.5 Figure 1. MRFG35003ANT1 Test Circuit Schematic Table 6. MRFG35003ANT1 Test Circuit Component Designations and Values Part C1, C20 C2, C3, C11, C12 C4, C13 C5, C14 C6, C15 C7, C16 C8, C17 C9, C18 C10, C19 C21, C22, C23 C24 R1 Description 7.5 pF Chip Capacitors 3.9 pF Chip Capacitors 10 pF Chip Capacitors 0.01 F Chip Capacitors 100 pF Chip Capacitors 1000 pF Chip Capacitors 39K pF Chip Capacitors 0.01 F Chip Capacitors 10 F Chip Capacitors 0.4 pF Chip Capacitors 5.6 pF Chip Capacitor 100 , 1/4 W Chip Resistor Part Number ATC100A7R5JT150XT 08051J3R9BBS ATC100A100JT150XT GRM1881X1H103JA01 ATC100B101JT500XT ATC100B102JT50XT ATC200B393KT50XT ATC200B103KT50XT GRM55DR61H106KA88B 08051J0R4ABS 08051J5R6BBS ERJ - 8GEYJ101V Manufacturer ATC AVX ATC Murata ATC ATC ATC ATC Murata AVX AVX Panasonic MRFG35003ANT1 RF Device Data Freescale Semiconductor 3 C6 C15 C10 C9 C8 C7 C5 C4 C14 C13 C11 C24 C12 C16 C17 C18 C19 C2 R1 C3 C1 C23 C21 C22 C20 MRFG35003AN Rev. 0 Figure 2. MRFG35003ANT1 Test Circuit Component Layout MRFG35003ANT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 16 14 Gps, POWER GAIN (dB) 12 Gps 10 8 D 6 4 18 20 22 24 26 28 30 Pout, OUTPUT POWER (dBm) 10 0 32 30 20 VDS = 12 Vdc, IDQ = 55 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.833e-108.2_, L = 0.698e-151.1_ 60 50 40 D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) Figure 3. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -10 VDS = 12 Vdc, IDQ = 55 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth S = 0.833e-108.2_, L = 0.698e-151.1_ IRL -5 -20 -10 -30 -15 -40 -20 -50 -60 18 20 22 ACPR -25 24 26 28 30 -30 32 Pout, OUTPUT POWER (dBm) Figure 4. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power NOTE: All data is referenced to package lead interface. S and L are the impedances presented to the DUT. All data is generated from load pull, not from the test circuit shown. MRFG35003ANT1 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS 14 12 Gps, POWER GAIN (dB) 10 8 6 D 4 2 18 20 22 24 26 28 30 Pout, OUTPUT POWER (dBm) 10 0 32 VDS = 12 Vdc, IDQ = 55 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 60 50 40 30 20 D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) Figure 5. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -10 VDS = 12 Vdc, IDQ = 55 mA, f = 3550 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) IRL -5 -20 -10 -30 -15 -40 ACPR -20 -50 -60 18 20 22 -25 24 26 28 30 -30 32 Pout, OUTPUT POWER (dBm) Figure 6. Single - Carrier W - CDMA ACPR and Input Return Loss versus Output Power NOTE: Data is generated from the test circuit shown. MRFG35003ANT1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 14 12 Gps, POWER GAIN (dB) 10 8 6 4 2 3450 D VDS = 12 Vdc, IDQ = 55 mA, Pout = 300 mW Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) Gps 34 32 30 28 26 24 22 3650 D, DRAIN EFFICIENCY (%) D, DRAIN EFFICIENCY (%) IRL, INPUT RETURN LOSS (dB) 3500 3550 f, FREQUENCY (MHz) 3600 Figure 7. Single - Carrier W - CDMA Power Gain and Drain Efficiency versus Frequency ACPR, ADJACENT CHANNEL POWER RATIO (dBc) 0 VDS = 12 Vdc, IDQ = 55 mA, Pout = 300 mW Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 0 -10 -5 -20 IRL -30 -10 -15 -40 -50 3450 ACPR 3500 3550 f, FREQUENCY (MHz) 3600 -20 -25 3650 Figure 8. Single - Carrier W - CDMA ACPR and Input Return Loss versus Frequency EVM, ERROR VECTOR MAGNITUDE (% rms) 12 10 8 6 4 2 0 18 20 22 24 26 28 30 Pout, OUTPUT POWER (dBm) D EVM 60 VDS = 12 Vdc, IDQ = 55 mA, f = 3550 MHz Single-Carrier OFDM 802.16d 64 QAM 3/4 7 MHz Channel Bandwidth PAR = 9.5 dB @ 0.01% Probability (CCDF) 50 40 30 20 10 0 32 Figure 9. Single - Carrier OFDM EVM and Drain Efficiency versus Output Power NOTE: Data is generated from the test circuit shown. MRFG35003ANT1 RF Device Data Freescale Semiconductor 7 Zload Zo = 50 f = 3550 MHz Zsource f = 3550 MHz VDD = 12 Vdc, IDQ = 55 mA, Pout = 300 mW Avg. f MHz 3550 Zsource 6.9 - j35.8 Zload 9.5 - j12.4 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Source and Load Impedance MRFG35003ANT1 8 RF Device Data Freescale Semiconductor Table 7. Class AB Common Source S - Parameters (VDS = 12 Vdc, IDQ = 55 mA, TA = 25C, 50 system) f GHz 0.500 0.525 0.550 0.575 0.600 0.625 0.650 0.675 0.700 0.725 0.750 0.775 0.800 0.825 0.850 0.875 0.900 0.925 0.950 0.975 1.000 1.025 1.050 1.075 1.100 1.125 1.150 1.175 1.200 1.225 1.250 1.275 1.300 1.325 1.350 1.375 1.400 1.425 1.450 1.475 1.500 1.525 1.550 1.575 S11 |S11| 0.893 0.892 0.894 0.892 0.893 0.893 0.893 0.893 0.893 0.894 0.893 0.894 0.893 0.893 0.893 0.893 0.894 0.893 0.893 0.893 0.892 0.893 0.892 0.893 0.892 0.892 0.892 0.891 0.891 0.890 0.891 0.890 0.890 0.891 0.890 0.890 0.890 0.890 0.889 0.889 0.889 0.888 0.889 0.889 - 166.3 - 167.7 - 169.2 - 170.3 - 171.7 - 172.6 - 174.0 - 174.9 - 175.9 - 177.0 - 177.8 - 178.9 - 179.6 179.4 178.6 177.8 177.0 176.4 175.4 174.7 174.0 173.3 172.6 171.8 171.2 170.5 169.9 169.2 168.6 168.0 167.4 166.8 166.2 165.6 165.0 164.4 163.9 163.3 162.7 162.2 161.1 160.7 160.2 159.8 |S21| 7.532 7.180 6.914 6.550 6.359 6.045 5.892 5.670 5.464 5.318 5.107 4.997 4.820 4.697 4.569 4.420 4.339 4.184 4.120 4.015 3.914 3.842 3.730 3.684 3.590 3.522 3.464 3.382 3.334 3.259 3.213 3.154 3.101 3.056 2.994 2.959 2.909 2.869 2.827 2.786 2.786 2.738 2.707 2.663 S21 85.5 84.3 83.1 81.9 80.9 79.8 78.7 77.7 76.6 75.7 74.7 73.7 72.7 71.8 70.8 69.9 69.1 68.1 67.3 66.3 65.4 64.6 63.7 62.9 61.9 61.1 60.3 59.4 58.6 57.7 56.9 56.0 55.2 54.4 53.5 52.8 51.9 51.1 50.3 49.4 48.4 47.6 46.8 46.0 |S12| 0.0369 0.0369 0.0370 0.0370 0.0371 0.0371 0.0372 0.0372 0.0372 0.0372 0.0372 0.0373 0.0373 0.0374 0.0374 0.0374 0.0375 0.0375 0.0375 0.0376 0.0376 0.0376 0.0377 0.0377 0.0378 0.0378 0.0379 0.0379 0.0380 0.0380 0.0380 0.0381 0.0382 0.0382 0.0383 0.0383 0.0384 0.0384 0.0385 0.0385 0.0391 0.0391 0.0391 0.0391 S12 3.0 2.1 1.3 0.6 - 0.2 - 0.9 - 1.6 - 2.3 - 2.9 - 3.5 - 4.1 - 4.7 - 5.3 - 5.9 - 6.4 - 7.0 - 7.5 - 8.1 - 8.6 - 9.1 - 9.6 - 10.1 - 10.6 - 11.1 - 11.6 - 12.2 - 12.7 - 13.1 - 13.6 - 14.2 - 14.6 - 15.1 - 15.6 - 16.0 - 16.5 - 17.0 - 17.5 - 17.9 - 18.4 - 18.8 - 19.5 - 19.9 - 20.4 - 20.8 |S22| 0.553 0.554 0.554 0.554 0.555 0.556 0.556 0.556 0.557 0.557 0.557 0.557 0.558 0.558 0.558 0.559 0.559 0.559 0.559 0.559 0.559 0.559 0.560 0.560 0.559 0.560 0.560 0.559 0.559 0.559 0.559 0.558 0.558 0.558 0.558 0.557 0.557 0.557 0.556 0.556 0.549 0.549 0.550 0.550 S22 - 168.3 - 169.3 - 170.3 - 171.1 - 171.9 - 172.7 - 173.4 - 174.1 - 174.7 - 175.4 - 176.0 - 176.6 - 177.1 - 177.6 - 178.1 - 178.7 - 179.2 - 179.6 180.0 179.6 179.1 178.7 178.3 177.9 177.5 177.1 176.7 176.3 175.9 175.5 175.1 174.7 174.3 173.9 173.5 173.1 172.7 172.2 171.8 171.4 171.2 170.7 170.2 169.7 (continued) MRFG35003ANT1 RF Device Data Freescale Semiconductor 9 Table 7. Class AB Common Source S - Parameters (VDS = 12 Vdc, IDQ = 55 mA, TA = 25C, 50 system) (continued) f GHz 1.600 1.625 1.650 1.675 1.700 1.725 1.750 1.775 1.800 1.825 1.850 1.875 1.900 1.925 1.950 1.975 2.000 2.025 2.050 2.075 2.100 2.125 2.150 2.175 2.200 2.225 2.250 2.275 2.300 2.325 2.350 2.375 2.400 2.425 2.450 2.475 2.500 2.525 2.550 2.575 2.600 2.625 2.650 2.675 S11 |S11| 0.889 0.889 0.888 0.888 0.887 0.887 0.887 0.886 0.886 0.886 0.886 0.885 0.885 0.885 0.884 0.884 0.884 0.883 0.884 0.883 0.883 0.882 0.883 0.882 0.881 0.881 0.880 0.880 0.879 0.878 0.878 0.877 0.876 0.875 0.875 0.875 0.874 0.874 0.873 0.873 0.872 0.871 0.871 0.870 159.4 159.0 158.5 158.1 157.6 157.1 156.6 156.1 155.6 155.1 154.5 154.0 153.5 152.9 152.3 151.7 151.1 150.5 149.9 149.3 148.6 148.0 147.3 146.7 146.0 145.3 144.6 143.9 143.2 142.6 141.9 141.2 140.5 139.8 139.1 138.5 137.8 137.1 136.4 135.8 135.1 134.4 133.7 133.1 |S21| 2.627 2.594 2.554 2.526 2.486 2.460 2.428 2.395 2.370 2.337 2.315 2.286 2.262 2.238 2.211 2.194 2.168 2.149 2.129 2.108 2.092 2.071 2.058 2.040 2.026 2.012 1.996 1.986 1.971 1.960 1.947 1.936 1.927 1.913 1.905 1.895 1.885 1.877 1.866 1.860 1.850 1.843 1.834 1.826 S21 45.2 44.4 43.6 42.9 42.0 41.3 40.5 39.7 38.9 38.1 37.3 36.5 35.7 34.9 34.0 33.2 32.4 31.6 30.8 30.0 29.2 28.3 27.5 26.7 25.8 25.0 24.2 23.3 22.5 21.6 20.8 19.9 19.0 18.1 17.3 16.4 15.5 14.7 13.8 12.9 12.0 11.1 10.2 9.3 |S12| 0.0391 0.0392 0.0392 0.0392 0.0392 0.0392 0.0393 0.0393 0.0393 0.0394 0.0394 0.0394 0.0395 0.0395 0.0396 0.0396 0.0397 0.0398 0.0399 0.0400 0.0401 0.0402 0.0402 0.0404 0.0405 0.0406 0.0408 0.0409 0.0411 0.0412 0.0414 0.0416 0.0417 0.0419 0.0421 0.0422 0.0424 0.0425 0.0427 0.0429 0.0431 0.0432 0.0434 0.0436 S12 - 21.2 - 21.6 - 22.0 - 22.4 - 22.9 - 23.3 - 23.7 - 24.1 - 24.6 - 25.0 - 25.5 - 25.9 - 26.3 - 26.8 - 27.2 - 27.7 - 28.2 - 28.6 - 29.1 - 29.5 - 30.0 - 30.5 - 30.9 - 31.4 - 31.9 - 32.4 - 32.8 - 33.3 - 33.8 - 34.3 - 34.9 - 35.4 - 35.9 - 36.5 - 37.0 - 37.5 - 38.1 - 38.6 - 39.2 - 39.7 - 40.3 - 40.8 - 41.4 - 41.9 |S22| 0.551 0.551 0.551 0.552 0.552 0.553 0.553 0.553 0.554 0.554 0.554 0.554 0.554 0.554 0.553 0.553 0.553 0.553 0.552 0.551 0.551 0.550 0.550 0.549 0.548 0.547 0.546 0.545 0.544 0.543 0.542 0.541 0.540 0.538 0.537 0.536 0.535 0.533 0.532 0.530 0.529 0.528 0.526 0.525 S22 169.3 168.8 168.4 168.0 167.6 167.2 166.9 166.5 166.2 165.9 165.5 165.2 164.9 164.6 164.4 164.1 163.8 163.5 163.3 163.0 162.8 162.5 162.3 162.0 161.8 161.5 161.2 160.9 160.6 160.3 160.0 159.7 159.3 158.9 158.5 158.1 157.7 157.2 156.7 156.3 155.8 155.3 154.8 154.4 (continued) MRFG35003ANT1 10 RF Device Data Freescale Semiconductor Table 7. Class AB Common Source S - Parameters (VDS = 12 Vdc, IDQ = 55 mA, TA = 25C, 50 system) (continued) f GHz 2.700 2.725 2.750 2.775 2.800 2.825 2.850 2.875 2.900 2.925 2.950 2.975 3.000 3.025 3.050 3.075 3.100 3.125 3.150 3.175 3.200 3.225 3.250 3.275 3.300 3.325 3.350 3.375 3.400 3.425 3.450 3.475 3.500 3.525 3.550 3.575 3.600 3.625 3.650 3.675 3.700 3.725 3.750 3.775 S11 |S11| 0.870 0.868 0.868 0.867 0.866 0.865 0.864 0.863 0.862 0.861 0.860 0.859 0.859 0.857 0.857 0.856 0.855 0.855 0.854 0.853 0.853 0.852 0.851 0.850 0.850 0.849 0.848 0.847 0.846 0.845 0.843 0.843 0.842 0.841 0.840 0.838 0.838 0.836 0.836 0.834 0.833 0.832 0.831 0.830 132.4 131.7 130.9 130.2 129.5 128.7 128.0 127.2 126.4 125.6 124.8 123.9 123.1 122.3 121.4 120.5 119.6 118.8 117.9 117.0 116.1 115.2 114.3 113.4 112.5 111.6 110.7 109.8 108.9 108.0 107.1 106.2 105.3 104.3 103.4 102.5 101.6 100.7 99.8 98.9 98.0 97.1 96.2 95.2 |S21| 1.821 1.811 1.806 1.797 1.791 1.786 1.777 1.774 1.765 1.761 1.755 1.749 1.746 1.739 1.737 1.730 1.727 1.723 1.717 1.716 1.710 1.709 1.705 1.702 1.700 1.695 1.695 1.691 1.689 1.687 1.683 1.682 1.678 1.677 1.674 1.671 1.670 1.666 1.665 1.661 1.660 1.657 1.654 1.654 S21 8.4 7.5 6.6 5.7 4.7 3.8 2.9 2.0 1.0 0.1 - 0.8 - 1.8 - 2.8 - 3.8 - 4.7 - 5.7 - 6.7 - 7.7 - 8.7 - 9.7 - 10.7 - 11.7 - 12.7 - 13.7 - 14.8 - 15.8 - 16.8 - 17.8 - 18.8 - 19.9 - 20.9 - 21.9 - 22.9 - 24.0 - 25.0 - 26.0 - 27.1 - 28.1 - 29.1 - 30.2 - 31.2 - 32.2 - 33.2 - 34.3 |S12| 0.0438 0.0440 0.0442 0.0443 0.0445 0.0447 0.0449 0.0451 0.0452 0.0454 0.0456 0.0458 0.0460 0.0463 0.0465 0.0467 0.0469 0.0471 0.0474 0.0476 0.0479 0.0482 0.0484 0.0487 0.0489 0.0491 0.0494 0.0497 0.0499 0.0502 0.0505 0.0507 0.0509 0.0512 0.0514 0.0517 0.0519 0.0521 0.0524 0.0526 0.0528 0.0530 0.0532 0.0534 S12 - 42.4 - 43.0 - 43.6 - 44.1 - 44.7 - 45.3 - 45.8 - 46.4 - 47.0 - 47.6 - 48.2 - 48.7 - 49.3 - 49.9 - 50.5 - 51.1 - 51.7 - 52.4 - 53.0 - 53.6 - 54.3 - 54.9 - 55.6 - 56.3 - 56.9 - 57.6 - 58.3 - 59.0 - 59.6 - 60.3 - 61.0 - 61.7 - 62.4 - 63.0 - 63.8 - 64.4 - 65.1 - 65.8 - 66.5 - 67.2 - 67.9 - 68.6 - 69.3 - 69.9 |S22| 0.524 0.522 0.521 0.520 0.519 0.517 0.516 0.514 0.513 0.511 0.510 0.508 0.506 0.504 0.502 0.500 0.498 0.496 0.495 0.493 0.491 0.490 0.488 0.486 0.485 0.483 0.482 0.481 0.479 0.478 0.477 0.476 0.475 0.474 0.473 0.472 0.471 0.470 0.468 0.467 0.466 0.465 0.464 0.463 S22 153.9 153.4 153.0 152.5 152.0 151.6 151.1 150.6 150.2 149.7 149.2 148.7 148.2 147.7 147.1 146.6 146.1 145.5 144.9 144.4 143.8 143.1 142.5 141.9 141.3 140.6 139.9 139.3 138.6 137.9 137.2 136.5 135.9 135.2 134.5 133.8 133.2 132.5 131.8 131.2 130.5 129.9 129.3 128.7 (continued) MRFG35003ANT1 RF Device Data Freescale Semiconductor 11 Table 7. Class AB Common Source S - Parameters (VDS = 12 Vdc, IDQ = 55 mA, TA = 25C, 50 system) (continued) f GHz 3.800 3.825 3.850 3.875 3.900 3.925 3.950 3.975 4.000 4.025 4.050 4.075 4.100 4.125 4.150 4.175 4.200 4.225 4.250 4.275 4.300 4.325 4.350 4.375 4.400 4.425 4.450 4.475 4.500 4.525 4.550 4.575 4.600 4.625 4.650 4.675 4.700 4.725 4.750 4.775 4.800 4.825 4.850 4.875 S11 |S11| 0.829 0.828 0.827 0.825 0.825 0.823 0.822 0.821 0.820 0.819 0.818 0.817 0.816 0.815 0.815 0.814 0.813 0.812 0.812 0.810 0.810 0.810 0.809 0.809 0.808 0.808 0.807 0.807 0.806 0.806 0.806 0.805 0.805 0.805 0.805 0.805 0.805 0.805 0.806 0.806 0.806 0.806 0.807 0.807 94.3 93.3 92.4 91.4 90.3 89.3 88.2 87.1 86.0 84.8 83.6 82.4 81.2 80.0 78.7 77.4 76.1 74.7 73.4 72.0 70.6 69.2 67.8 66.4 64.9 63.4 61.9 60.4 58.8 57.3 55.7 54.2 52.6 51.0 49.4 47.8 46.2 44.6 43.0 41.3 39.7 38.1 36.5 34.8 |S21| 1.650 1.649 1.646 1.645 1.644 1.641 1.641 1.638 1.638 1.636 1.634 1.634 1.631 1.631 1.630 1.628 1.627 1.626 1.626 1.623 1.624 1.623 1.622 1.622 1.620 1.620 1.619 1.618 1.617 1.615 1.615 1.612 1.612 1.609 1.607 1.605 1.601 1.601 1.596 1.594 1.590 1.586 1.583 1.578 S21 - 35.3 - 36.3 - 37.4 - 38.4 - 39.5 - 40.5 - 41.6 - 42.7 - 43.8 - 44.9 - 46.0 - 47.1 - 48.3 - 49.4 - 50.6 - 51.8 - 52.9 - 54.1 - 55.4 - 56.6 - 57.8 - 59.1 - 60.3 - 61.6 - 62.9 - 64.2 - 65.5 - 66.9 - 68.2 - 69.5 - 70.9 - 72.3 - 73.6 - 75.0 - 76.4 - 77.8 - 79.2 - 80.6 - 82.0 - 83.5 - 84.9 - 86.4 - 87.8 - 89.3 |S12| 0.0537 0.0539 0.0541 0.0543 0.0546 0.0548 0.0550 0.0553 0.0555 0.0558 0.0560 0.0562 0.0565 0.0568 0.0570 0.0572 0.0575 0.0578 0.0580 0.0583 0.0586 0.0588 0.0591 0.0594 0.0596 0.0598 0.0600 0.0603 0.0606 0.0608 0.0611 0.0614 0.0616 0.0619 0.0621 0.0623 0.0625 0.0627 0.0629 0.0631 0.0632 0.0634 0.0635 0.0637 S12 - 70.6 - 71.3 - 72.0 - 72.6 - 73.3 - 74.0 - 74.7 - 75.5 - 76.2 - 76.9 - 77.7 - 78.4 - 79.2 - 80.0 - 80.8 - 81.6 - 82.4 - 83.2 - 84.1 - 84.9 - 85.8 - 86.7 - 87.6 - 88.5 - 89.5 - 90.4 - 91.4 - 92.2 - 93.2 - 94.1 - 95.1 - 96.1 - 97.1 - 98.2 - 99.2 - 100.2 - 101.3 - 102.4 - 103.4 - 104.5 - 105.5 - 106.6 - 107.7 - 108.8 |S22| 0.461 0.460 0.459 0.457 0.456 0.454 0.452 0.450 0.448 0.445 0.443 0.440 0.437 0.435 0.432 0.429 0.426 0.422 0.419 0.416 0.413 0.410 0.406 0.403 0.400 0.397 0.393 0.390 0.386 0.383 0.379 0.375 0.372 0.368 0.365 0.361 0.357 0.354 0.349 0.346 0.342 0.338 0.334 0.330 S22 128.2 127.6 127.1 126.5 126.0 125.5 124.9 124.4 123.9 123.4 122.8 122.2 121.7 121.1 120.5 119.9 119.2 118.5 117.8 117.0 116.2 115.4 114.6 113.7 112.9 111.9 111.0 110.0 109.0 108.0 106.9 105.8 104.6 103.5 102.2 101.0 99.7 98.3 97.0 95.5 94.0 92.4 90.8 89.2 (continued) MRFG35003ANT1 12 RF Device Data Freescale Semiconductor Table 7. Class AB Common Source S - Parameters (VDS = 12 Vdc, IDQ = 55 mA, TA = 25C, 50 system) (continued) f GHz 4.900 4.925 4.950 4.975 5.000 5.025 5.050 5.075 5.100 5.125 5.150 5.175 5.200 5.225 5.250 5.275 5.300 5.325 5.350 5.375 5.400 5.425 5.450 5.475 5.500 5.525 5.550 5.575 5.600 5.625 5.650 5.675 5.700 5.725 5.750 5.775 5.800 5.825 5.850 5.875 5.900 5.925 5.950 5.975 S11 |S11| 0.808 0.808 0.809 0.810 0.811 0.812 0.813 0.814 0.814 0.815 0.817 0.818 0.819 0.821 0.822 0.823 0.825 0.826 0.828 0.829 0.831 0.832 0.834 0.835 0.836 0.838 0.840 0.841 0.842 0.844 0.845 0.847 0.848 0.849 0.851 0.852 0.853 0.855 0.857 0.858 0.859 0.860 0.862 0.863 33.2 31.5 29.8 28.2 26.5 24.8 23.1 21.4 19.7 18.0 16.3 14.6 12.9 11.2 9.5 7.8 6.1 4.4 2.7 1.0 - 0.7 - 2.4 - 4.1 - 5.7 - 7.4 - 9.1 - 10.7 - 12.3 - 14.0 - 15.6 - 17.2 - 18.8 - 20.4 - 22.0 - 23.5 - 25.1 - 26.6 - 28.2 - 29.7 - 31.3 - 32.7 - 34.3 - 35.8 - 37.3 |S21| 1.574 1.567 1.564 1.558 1.550 1.545 1.537 1.531 1.523 1.516 1.508 1.499 1.492 1.482 1.474 1.464 1.454 1.444 1.433 1.424 1.413 1.403 1.392 1.381 1.370 1.359 1.349 1.337 1.326 1.316 1.304 1.294 1.283 1.272 1.261 1.251 1.240 1.230 1.220 1.209 1.199 1.188 1.178 1.168 S21 - 90.8 - 92.2 - 93.7 - 95.2 - 96.7 - 98.2 - 99.7 - 101.2 - 102.7 - 104.2 - 105.8 - 107.3 - 108.8 - 110.4 - 111.9 - 113.5 - 115.0 - 116.5 - 118.1 - 119.6 - 121.2 - 122.7 - 124.3 - 125.8 - 127.4 - 128.9 - 130.5 - 132.0 - 133.5 - 135.1 - 136.6 - 138.1 - 139.7 - 141.2 - 142.7 - 144.2 - 145.7 - 147.2 - 148.8 - 150.3 - 151.8 - 153.3 - 154.8 - 156.3 |S12| 0.0638 0.0639 0.0640 0.0641 0.0639 0.0639 0.0639 0.0638 0.0637 0.0638 0.0637 0.0637 0.0637 0.0636 0.0634 0.0633 0.0632 0.0631 0.0630 0.0628 0.0627 0.0625 0.0624 0.0622 0.0620 0.0618 0.0616 0.0614 0.0613 0.0611 0.0609 0.0607 0.0604 0.0602 0.0601 0.0599 0.0596 0.0594 0.0592 0.0591 0.0589 0.0587 0.0586 0.0585 S12 - 109.9 - 111.1 - 112.3 - 113.5 - 114.6 - 115.8 - 116.9 - 118.0 - 119.1 - 120.2 - 121.3 - 122.5 - 123.7 - 124.8 - 126.0 - 127.1 - 128.3 - 129.5 - 130.6 - 131.8 - 133.0 - 134.2 - 135.4 - 136.6 - 137.8 - 139.0 - 140.2 - 141.3 - 142.5 - 143.7 - 144.9 - 146.1 - 147.3 - 148.4 - 149.6 - 150.8 - 151.9 - 153.1 - 154.1 - 155.3 - 156.4 - 157.5 - 158.6 - 159.7 |S22| 0.326 0.322 0.318 0.315 0.311 0.308 0.305 0.302 0.299 0.297 0.295 0.293 0.292 0.291 0.291 0.291 0.291 0.292 0.293 0.294 0.296 0.297 0.300 0.302 0.304 0.306 0.309 0.311 0.314 0.316 0.319 0.321 0.324 0.326 0.329 0.331 0.334 0.336 0.338 0.341 0.343 0.346 0.348 0.351 S22 87.4 85.6 83.7 81.7 79.7 77.6 75.4 73.2 70.9 68.6 66.2 63.8 61.4 58.9 56.4 53.9 51.4 49.0 46.5 44.1 41.7 39.4 37.0 34.7 32.5 30.3 28.1 26.0 23.9 21.9 19.9 17.9 15.9 13.9 12.0 10.0 8.1 6.2 4.2 2.2 0.2 - 1.7 - 3.7 - 5.7 (continued) MRFG35003ANT1 RF Device Data Freescale Semiconductor 13 Table 7. Class AB Common Source S - Parameters (VDS = 12 Vdc, IDQ = 55 mA, TA = 25C, 50 system) (continued) f GHz 6.000 6.025 6.050 6.075 6.100 6.125 6.150 6.175 6.200 6.225 6.250 6.275 6.300 6.325 6.350 6.375 6.400 6.425 6.450 6.475 6.500 6.525 6.550 6.575 6.600 6.625 6.650 6.675 6.700 6.725 6.750 6.775 6.800 6.825 6.850 6.875 6.900 6.925 6.950 6.975 7.000 7.025 7.050 7.075 S11 |S11| 0.865 0.866 0.868 0.869 0.871 0.872 0.874 0.875 0.876 0.877 0.879 0.880 0.881 0.883 0.884 0.886 0.887 0.888 0.890 0.891 0.892 0.893 0.894 0.896 0.897 0.898 0.898 0.900 0.901 0.900 0.901 0.902 0.903 0.903 0.903 0.903 0.904 0.904 0.904 0.906 0.907 0.908 0.910 0.911 - 38.7 - 40.2 - 41.7 - 43.1 - 44.6 - 46.1 - 47.5 - 49.0 - 50.4 - 51.9 - 53.3 - 54.7 - 56.1 - 57.6 - 59.0 - 60.4 - 61.8 - 63.2 - 64.6 - 66.0 - 67.4 - 68.7 - 70.2 - 71.5 - 72.8 - 74.2 - 75.6 - 76.9 - 78.2 - 79.5 - 80.8 - 82.1 - 83.3 - 84.5 - 85.7 - 86.9 - 88.0 - 89.1 - 90.0 - 91.1 - 92.0 - 93.0 - 93.9 - 94.8 |S21| 1.157 1.147 1.136 1.126 1.115 1.103 1.093 1.081 1.070 1.059 1.047 1.036 1.024 1.013 1.001 0.989 0.978 0.966 0.954 0.942 0.930 0.918 0.906 0.894 0.882 0.870 0.858 0.847 0.835 0.824 0.812 0.801 0.790 0.779 0.768 0.757 0.747 0.736 0.725 0.715 0.704 0.693 0.682 0.671 S21 - 157.8 - 159.3 - 160.8 - 162.3 - 163.8 - 165.3 - 166.8 - 168.3 - 169.8 - 171.3 - 172.8 - 174.3 - 175.8 - 177.3 - 178.8 179.7 178.3 176.8 175.3 173.8 172.3 170.9 169.4 167.9 166.5 165.0 163.6 162.2 160.8 159.3 157.9 156.5 155.1 153.8 152.4 151.0 149.6 148.3 146.9 145.6 144.3 143.0 141.7 140.5 |S12| 0.0584 0.0582 0.0580 0.0577 0.0576 0.0574 0.0574 0.0573 0.0572 0.0571 0.0570 0.0568 0.0567 0.0566 0.0565 0.0566 0.0567 0.0569 0.0571 0.0573 0.0577 0.0580 0.0584 0.0588 0.0592 0.0599 0.0608 0.0618 0.0629 0.0638 0.0645 0.0652 0.0657 0.0665 0.0671 0.0676 0.0674 0.0670 0.0663 0.0649 0.0624 0.0599 0.0574 0.0550 S12 - 160.9 - 162.1 - 163.3 - 164.3 - 165.4 - 166.4 - 167.4 - 168.5 - 169.6 - 170.7 - 171.9 - 173.0 - 174.0 - 175.0 - 176.0 - 176.9 - 177.9 - 178.9 - 180.0 178.9 177.8 176.6 175.3 174.0 172.8 171.5 170.2 168.5 166.5 164.2 161.8 159.4 156.8 154.2 151.1 147.8 144.2 140.7 136.8 132.7 129.1 126.2 123.6 121.6 |S22| 0.353 0.356 0.360 0.363 0.367 0.370 0.375 0.379 0.383 0.388 0.393 0.398 0.403 0.407 0.412 0.417 0.422 0.427 0.432 0.437 0.443 0.448 0.453 0.459 0.465 0.471 0.478 0.484 0.490 0.496 0.503 0.509 0.515 0.522 0.528 0.533 0.539 0.545 0.551 0.556 0.562 0.569 0.576 0.583 S22 - 7.8 - 9.8 - 11.8 - 13.9 - 15.9 - 17.9 - 19.9 - 21.8 - 23.7 - 25.6 - 27.5 - 29.3 - 31.1 - 32.9 - 34.6 - 36.4 - 38.1 - 39.8 - 41.5 - 43.2 - 44.9 - 46.6 - 48.3 - 50.0 - 51.7 - 53.3 - 55.0 - 56.6 - 58.2 - 59.8 - 61.3 - 62.8 - 64.3 - 65.7 - 67.1 - 68.4 - 69.7 - 70.9 - 72.0 - 73.0 - 73.9 - 74.9 - 75.7 - 76.6 (continued) MRFG35003ANT1 14 RF Device Data Freescale Semiconductor Table 7. Class AB Common Source S - Parameters (VDS = 12 Vdc, IDQ = 55 mA, TA = 25C, 50 system) (continued) f GHz 7.100 7.125 7.150 7.175 7.200 7.225 7.250 7.275 7.300 7.325 7.350 7.375 7.400 7.425 7.450 7.475 7.500 7.525 7.550 7.575 7.600 7.625 7.650 7.675 7.700 7.725 7.750 7.775 7.800 7.825 7.850 7.875 7.900 7.925 7.950 7.975 8.000 S11 |S11| 0.914 0.914 0.916 0.917 0.920 0.922 0.923 0.925 0.926 0.928 0.929 0.930 0.933 0.934 0.934 0.935 0.937 0.938 0.938 0.939 0.939 0.940 0.940 0.940 0.942 0.942 0.943 0.943 0.944 0.945 0.946 0.946 0.947 0.949 0.949 0.949 0.950 - 95.7 - 96.5 - 97.4 - 98.1 - 98.9 - 99.7 - 100.4 - 101.1 - 101.8 - 102.4 - 103.0 - 103.6 - 104.2 - 104.7 - 105.2 - 105.8 - 106.4 - 106.8 - 107.3 - 107.9 - 108.4 - 108.9 - 109.3 - 109.8 - 110.3 - 110.8 - 111.2 - 111.7 - 112.3 - 112.8 - 113.2 - 113.7 - 114.2 - 114.8 - 115.3 - 115.7 - 116.2 |S21| 0.660 0.650 0.640 0.629 0.619 0.609 0.599 0.590 0.580 0.570 0.561 0.552 0.543 0.534 0.525 0.516 0.508 0.500 0.491 0.483 0.475 0.468 0.460 0.452 0.445 0.438 0.431 0.423 0.416 0.409 0.403 0.396 0.389 0.383 0.377 0.371 0.365 S21 139.3 138.2 137.0 135.9 134.8 133.8 132.8 131.7 130.8 129.8 128.9 128.0 127.0 126.2 125.2 124.3 123.5 122.6 121.7 120.8 119.9 119.1 118.2 117.3 116.4 115.6 114.7 113.8 113.0 112.1 111.2 110.4 109.5 108.6 107.7 106.9 106.0 |S12| 0.0529 0.0514 0.0498 0.0479 0.0459 0.0444 0.0429 0.0415 0.0402 0.0389 0.0380 0.0369 0.0358 0.0348 0.0340 0.0332 0.0324 0.0316 0.0308 0.0300 0.0292 0.0285 0.0278 0.0271 0.0264 0.0258 0.0251 0.0245 0.0240 0.0233 0.0228 0.0223 0.0217 0.0212 0.0208 0.0203 0.0199 S12 120.1 118.4 116.5 114.7 113.4 112.3 111.2 110.3 109.4 108.7 107.9 107.1 106.3 105.8 105.1 104.4 103.9 102.8 102.3 101.3 100.7 100.3 99.6 98.9 98.5 97.9 97.4 96.9 96.3 95.8 95.5 95.1 94.6 94.3 93.9 93.6 93.2 |S22| 0.590 0.598 0.605 0.612 0.619 0.626 0.634 0.640 0.646 0.653 0.659 0.664 0.670 0.675 0.679 0.684 0.689 0.692 0.696 0.700 0.704 0.707 0.711 0.714 0.717 0.721 0.724 0.727 0.730 0.733 0.736 0.740 0.743 0.746 0.749 0.752 0.755 S22 - 77.4 - 78.2 - 79.0 - 79.7 - 80.4 - 81.0 - 81.7 - 82.3 - 82.9 - 83.5 - 84.1 - 84.6 - 85.2 - 85.7 - 86.3 - 86.8 - 87.3 - 87.8 - 88.5 - 89.0 - 89.6 - 90.2 - 90.9 - 91.6 - 92.2 - 93.0 - 93.7 - 94.4 - 95.2 - 95.9 - 96.7 - 97.5 - 98.3 - 99.0 - 99.8 - 100.5 - 101.3 MRFG35003ANT1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS A F 3 0.146 3.71 0.095 2.41 0.115 2.92 B D 1 2 R L 0.115 2.92 0.020 0.51 4 N K Q ZONE V 0.35 (0.89) X 45_" 5 _ 10_DRAFT inches mm SOLDER FOOTPRINT INCHES MIN MAX 0.255 0.265 0.225 0.235 0.065 0.072 0.130 0.150 0.021 0.026 0.026 0.044 0.050 0.070 0.045 0.063 0.160 0.180 0.273 0.285 0.245 0.255 0.230 0.240 0.000 0.008 0.055 0.063 0.200 0.210 0.006 0.012 0.006 0.012 0.000 0.021 0.000 0.010 0.000 0.010 MILLIMETERS MIN MAX 6.48 6.73 5.72 5.97 1.65 1.83 3.30 3.81 0.53 0.66 0.66 1.12 1.27 1.78 1.14 1.60 4.06 4.57 6.93 7.24 6.22 6.48 5.84 6.10 0.00 0.20 1.40 1.60 5.08 5.33 0.15 0.31 0.15 0.31 0.00 0.53 0.00 0.25 0.00 0.25 U H 4 P C Y Y E ZONE W 1 2 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1984. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. STYLE 1: PIN 1. 2. 3. 4. DRAIN GATE SOURCE SOURCE 3 G S ZONE X VIEW Y - Y CASE 466 - 03 ISSUE D PLD - 1.5 PLASTIC DIM A B C D E F G H J K L N P Q R S U ZONE V ZONE W ZONE X MRFG35003ANT1 16 RF Device Data Freescale Semiconductor EEE E E EEEEEE EEEE E EEEEEE EE EEEEEE EE EEEEEE EE PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 2 Date April 2007 Dec. 2008 June 2009 * Initial Release of Data Sheet * Removed "Operating Case Temperature Range" from Maximum Ratings table so that the maximum channel temperature rating is the limiting thermal design criteria and not the case temperature range, p. 1 * Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing process as described in Product and Process Change Notification number, PCN13516, p. 2 Description MRFG35003ANT1 RF Device Data Freescale Semiconductor 17 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1 - 800- 521- 6274 or +1 - 480- 768- 2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. 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Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2007 - 2009. All rights reserved. MRFG35003ANT1 Rev. 18 2, 6/2009 Document Number: MRFG35003AN RF Device Data Freescale Semiconductor |
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