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TrenchStop(R) Series IGP30N60T IGW30N60T Low Loss IGBT in TrenchStop(R) and Fieldstop technology * * * * * Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time - 5s Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop(R) and Fieldstop technology for 600 V applications offers : PG-TO-220-3-1 - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE 600V 600V IC 30A 30A VCE(sat),Tj=25C 1.5V 1.5V Tj,max 175C 175C Marking Code G30T60 G30T60 Package PG-TO-220-3-1 PG-TO-247-3 C G E PG-TO-247-3 * * * * * * Type IGP30N60T IGW30N60T Maximum Ratings Parameter Collector-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE 600V, Tj 175C) Gate-emitter voltage Short circuit withstand time 2) Symbol VCE IC Value 600 60 30 Unit V A ICpuls VGE tSC Ptot Tj Tstg - 90 90 20 5 187 -40...+175 -55...+175 260 V s W C VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.6 Nov. 09 Power Semiconductors TrenchStop(R) Series Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Thermal resistance, junction - ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 RthJC Symbol Conditions IGP30N60T IGW30N60T Max. Value 0.80 62 40 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =0.2mA VCE(sat) V G E = 15 V, I C =30A T j = 25C T j = 175 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =0 .43mA, V C E =V G E V C E = 60 0 V, VGE=0V T j = 25C T j = 175 C Gate-emitter leakage current Transconductance Integrated gate resistor Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) Symbol Conditions Value min. 600 4.1 typ. 1.5 1.9 4.9 max. 2.05 5.7 Unit V A 16.7 40 1000 100 nA S IGES gfs RGint V C E = 0 V , V G E =20V V C E =20V, I C =30A Ciss Coss Crss QGate LE IC(SC) V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =30A V G E =15V PG- TO- 220- 3-1 PG- TO- 247- 3-21 V G E =15V,t S C 5 s V C C = 400 V, T j = 1 50 C - 1630 108 50 167 7 13 275 - pF nC nH A 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2 Rev. 2.6 Nov. 09 Power Semiconductors TrenchStop(R) Series Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 40 0 V,I C =30A, V G E = 0 /1 5 V, R G = 1 0 .6 , L 1 ) =1 36nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery. 2) Symbol Conditions IGP30N60T IGW30N60T Value min. Typ. 23 21 254 46 0.69 0.77 1.46 max. mJ Unit ns Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets T j = 175 C , V C C = 40 0 V,I C =30A, V G E = 0 /1 5 V, R G = 1 0 .6 L 1 ) =1 36nH, C 1 ) =39pF Energy losses include "tail" and diode reverse recovery.2) 24 26 292 90 1.0 1.1 2.1 mJ ns Symbol Conditions Value min. Typ. max. Unit 1) 2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. Includes Reverse Recovery Losses from IKW30N60T due to dynamic test circuit in Figure E. 3 Rev. 2.6 Nov. 09 Power Semiconductors TrenchStop(R) Series 100A 90A 80A IGP30N60T IGW30N60T tp=2s 10s IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 60A 50A 40A 30A 20A 10A 0A 100H z 10A 50s T C =80C T C =110C Ic 1A DC 1ms 10ms Ic 1kH z 10kH z 100kH z 0.1A 1V 10V 100V 1000V f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 10) VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=15V) 160W 50A IC, COLLECTOR CURRENT POWER DISSIPATION 40A 120W 30A 80W 20A Ptot, 40W 10A 0W 25C 50C 75C 100C 125C 150C 0A 25C 75C 125C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) Power Semiconductors 4 Rev. 2.6 Nov. 09 TrenchStop(R) Series 80A 70A 50A IGP30N60T IGW30N60T IC, COLLECTOR CURRENT 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT 60A 50A 40A 30A 20A 10A 0A V G E =20V 40A V G E =20V 15V 13V 30A 11V 9V 20A 7V 10A 0A 0V 1V 2V 3V 0V 1V 2V 3V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25C) VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE 50A 2.5V IC =60A IC, COLLECTOR CURRENT 40A 2.0V IC =30A 30A 1.5V 20A 1.0V IC =15A 10A T J = 1 7 5 C 2 5 C 0.5V 0A 0.0V 0V 2V 4V 6V 8V 0C 50C 100C 150C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) Power Semiconductors 5 Rev. 2.6 Nov. 09 TrenchStop(R) Series IGP30N60T IGW30N60T t d(off) t d(off) t, SWITCHING TIMES t, SWITCHING TIMES 100ns tf t d(on) tf 100ns 10ns tr t d(on) tr 1ns 0A 10A 20A 30A 10ns 10 20 30 40 IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175C, VCE = 400V, VGE = 0/15V, RG = 10, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175C, VCE= 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) 7V 6V t d(off) VGE(th), GATE-EMITT TRSHOLD VOLTAGE m ax. 5V 4V 3V 2V 1V 0V -50C typ. t, SWITCHING TIMES 100ns tf m in. t d(on) tr 10ns 25C 50C 75C 100C 125C 150C 0C 50C 100C 150C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG=10, Dynamic test circuit in Figure E) TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.43mA) Power Semiconductors 6 Rev. 2.6 Nov. 09 TrenchStop(R) Series *) Eon and Ets include losses due to diode recovery IGP30N60T IGW30N60T 5.0mJ Ets* *) E on an d E ts in c lud e lo s se s du e to d io d e re co v ery E ts * 3.0 m J E, SWITCHING ENERGY LOSSES 4.0mJ E, SWITCHING ENERGY LOSSES 3.0mJ E off 2.0 m J 2.0mJ Eoff 1.0 m J 1.0mJ Eon* E on * 0.0 m J 30A 40A 50A 0 10 20 30 40 0.0mJ 0A 10A 20A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, RG = 10, Dynamic test circuit in Figure E) RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175C, VCE = 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) 2.0mJ *) Eon and Ets include losses due to diode recovery *) E on and E ts include losses Ets* 3.0m J due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 1.5mJ 2.5m J 2.0m J E ts * 1.0mJ Eoff 1.5m J 1.0m J 0.5m J 0.0m J 300V E on * E off 0.5mJ Eon* 0.0mJ 25C 50C 75C 100C 125C 150C 350V 400V 450V 500V 550V TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG = 10, Dynamic test circuit in Figure E) VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175C, VGE = 0/15V, IC = 30A, RG = 10, Dynamic test circuit in Figure E) Power Semiconductors 7 Rev. 2.6 Nov. 09 TrenchStop(R) Series IGP30N60T IGW30N60T C iss VGE, GATE-EMITTER VOLTAGE 1nF 15V 120V 10V 480V c, CAPACITANCE 5V 100pF C oss C rss 0V 0nC 30nC 60nC 90nC 120nC 150nC 180n C 0V 10V 20V 30V 40V QGE, GATE CHARGE Figure 17. Typical gate charge (IC=30 A) VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) 12s IC(sc), short circuit COLLECTOR CURRENT 400A SHORT CIRCUIT WITHSTAND TIME 10s 8s 6s 4s 2s 0s 10V 300A 200A tSC, 100A 0A 12V 14V 16V 18V 11V 12V 13V 14V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25C, TJmax<150C) Power Semiconductors 8 Rev. 2.6 Nov. 09 TrenchStop(R) Series IGP30N60T IGW30N60T ZthJC, TRANSIENT THERMAL RESISTANCE D=0.5 0.2 10 K/W -1 0.1 0.05 R,(K/W) 0.29566 0.25779 0.19382 0.05279 , (s) -2 6.478*10 -3 6.12*10 -4 4.679*10 -5 6.45*10 R2 0.02 10 K/W -2 R1 0.01 C1=1/R1 C2=2/R2 single pulse 1s 10s 100s 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) Power Semiconductors 9 Rev. 2.6 Nov. 09 TrenchStop(R) Series PG-TO-220-3-1 IGP30N60T IGW30N60T Power Semiconductors 10 Rev. 2.6 Nov. 09 TrenchStop(R) Series IGP30N60T IGW30N60T Power Semiconductors 11 Rev. 2.6 Nov. 09 TrenchStop(R) Series i,v diF /dt IGP30N60T IGW30N60T tr r =tS +tF Qr r =QS +QF tr r IF tS QS tF 10% Ir r m t VR Ir r m QF dir r /dt 90% Ir r m Figure C. Definition of diodes switching characteristics 1 Tj (t) p(t) r1 r2 2 n rn r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Figure E. Dynamic test circuit Power Semiconductors 12 Rev. 2.6 Nov. 09 TrenchStop(R) Series IGP30N60T IGW30N60T Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.6 Nov. 09 |
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