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| IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Features * N-channel, normal level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * 175 C operating temperature * Pb-free lead plating; RoHS compliant, halogen free * Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO-263) ID 120 3.8 120 V m A * Ideal for high-frequency switching and synchronous rectification Type IPB038N12N3 G IPI041N12N3 G IPP041N12N3 G Package Marking PG-TO263-3 038N12N PG-TO262-3 041N12N PG-TO220-3 041N12N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C2) T C=100 C Pulsed drain current3) Avalanche energy, single pulse Gate source voltage 4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg T C=25 C T C=25 C I D=100 A, R GS=25 Value 120 120 480 900 20 300 -55 ... 175 55/175/56 mJ V W C Unit A Rev. 2.2 page 1 2009-07-16 IPI041N12N3 G IPP041N12N3 G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.5 62 40 K/W IPB038N12N3 G Unit max. Values typ. Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=270 A V DS=100 V, V GS=0 V, T j=25 C V DS=100 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A V GS=10 V, I D=100 A, TO263 Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 120 2 3 0.1 4 1 A V 83 10 1 3.5 3.2 1.4 165 100 100 4.1 3.8 S nA m 1) J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 182 A. See figure 3 Tjmax=150 C and duty cycle D=0.01 for Vgs<-5V 2) 3) 4) 5) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2009-07-16 IPI041N12N3 G IPP041N12N3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 6) IPB038N12N3 G Unit max. Values typ. C iss C oss C rss t d(on) tr t d(off) tf V DD=60 V, V GS=10 V, I D=100 A, R G=1.6 V GS=0 V, V DS=60 V, f =1 MHz - 10400 1320 61 35 52.0 70 21 13800 pF 1760 ns Q gs Q gd Q sw Qg V plateau Q oss V DD=60.1 V, V GS=0 V V DD=60.1 V, I D=100 A, V GS=0 to 10 V - 52 37 58 158 5.0 182 211 243 nC V nC IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=60 V, I F=I S, di F/dt =100 A/s - 0.9 123 356 120 480 1.2 A V ns - nC See figure 16 for gate charge parameter definition Rev. 2.2 page 3 2009-07-16 IPI041N12N3 G IPP041N12N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V IPB038N12N3 G 350 140 300 120 250 100 P tot [W] 200 80 150 I D [A] 60 100 40 50 20 0 0 50 100 150 200 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 1 s 100 s 10 s 10 ms 1 ms 0.5 102 10-1 0.2 0.1 0.05 0.02 0.01 10 1 Z thJC [K/W] -2 DC I D [A] 10 single pulse 100 10 -1 10-3 10 0 10 1 10 2 10 3 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 2.2 page 4 2009-07-16 IPI041N12N3 G IPP041N12N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 400 7V 10 V IPB038N12N3 G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 10 4.5 V 9 6.5 V 6V 320 8 R DS(on) [m] 240 7 5V I D [A] 6 5.5 V 160 5.5 V 5 6V 4 80 5V 10 V 3 4.5 V 0 0 1 2 3 4 5 2 0 50 100 150 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 300 8 Typ. forward transconductance g fs=f(I D); T j=25 C 200 250 160 200 120 150 g fs [S] 80 175 C 25 C I D [A] 100 50 40 0 0 2 4 6 8 0 0 50 100 150 V GS [V] I D [A] Rev. 2.2 page 5 2009-07-16 IPI041N12N3 G IPP041N12N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 10 4 IPB038N12N3 G 3.5 8 3 270 A 2700 A R DS(on) [m] 6 98 % 2.5 V GS(th) [V] 100 140 180 2 4 typ 1.5 1 2 0.5 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 103 104 Ciss Coss 25 C 175 C, 98% 102 175 C C [pF] 25 C, 98% 10 3 Crss I F [A] 101 100 0 20 40 60 80 100 0 0.5 1 1.5 2 102 101 V DS [V] V SD [V] Rev. 2.2 page 6 2009-07-16 IPI041N12N3 G IPP041N12N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 1000 IPB038N12N3 G 14 Typ. gate charge V GS=f(Q gate); I D=100 A pulsed parameter: V DD 10 96 V 8 24 V 60 V 100 25 C 6 100 C V GS [V] 4 2 0 1000 0 I AS [A] 150 C 10 1 1 10 100 50 100 150 200 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 140 V GS 135 Qg 130 125 V BR(DSS) [V] 120 115 V g s(th) 110 105 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 100 T j [C] Rev. 2.2 page 7 2009-07-16 IPI041N12N3 G IPP041N12N3 G PG-TO220-3: Outline IPB038N12N3 G Rev. 2.2 page 8 2009-07-16 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G Rev. 2.2 page 9 2009-07-16 IPI041N12N3 G IPP041N12N3 G PG-TO-263 (D-Pak) IPB038N12N3 G Rev. 2.2 page 10 2009-07-16 IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions o characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o non-infringement of intellectual property rights of any third party Information For further information on technology, delivery terms and conditions and prices please contact your neares Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.2 page 11 2009-07-16 |
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