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| STD1LNK60Z-1 STQ1NK60ZR-AP - STN1NK60Z N-channel 600V - 13 - 0.8A - TO-92 - TO-251 - SOT-223 Zener-Protected SuperMESHTM Power MOSFET Features Type STD1LNK60Z-1 STQ1NK60ZR-AP STN1NK60Z VDSS 600V 600V 600V RDS(on) <15 <15 <15 ID 0.8A 0.3A 0.3A Pw 25W 3W 3.3W 2 TO-92 (Ammopak) 100% avalanche tested Extremely high dv/dt capability Gate charge minimized ESD improved capability New high voltage benchmark 1 2 3 2 1 3 SOT-223 TO-251(IPAK) Description Figure 1. The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products. Internal schematic diagram Application Switching applications Table 1. Device summary Marking D1LNK60Z 1NK60ZR 1NK60Z Package TO-251(IPAK) TO-92 SOT-223 Packaging Tube Ammopak Tape & reel Order codes STD1LNK60Z-1 STQ1NK60ZR-AP STN1NK60Z July 2007 Rev 11 1/16 www.st.com 16 Contents STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 2/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (1) Absolute maximum ratings Value Parameter IPAK Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor 0.8 0.5 3.2 25 0.24 3 0.25 800 4.5 -55 to 150 TO-92 600 30 0.3 0.189 1.2 3.3 0.26 0.3 SOT-223 V V A A A W W/C V V/ns C Unit PTOT VESD(G-D) dv/dt(2) TJ Tstg Gate source ESD(HBM-C=100pF, R=1.5K) Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD 0.3A, di/dt 200A/s, VDD =80%V(BR)DSS Table 3. Symbol Rthj-case Rthj-a Rthj-lead Tl Thermal resistance Value Parameter IPAK Thermal resistance junction-case Max Thermal resistance junction-ambient Max Thermal resistance junction-lead Max Maximum lead temperature for soldering purpose 5 100 -275 TO-92 -120 40 260 SOT-223 -37.87(1) -C/W C/W C/W C Unit 1. When mounted on 1 inch FR-4 board, 2 Oz Cu Table 4. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 0.8 60 Unit A mJ 3/16 Electrical characteristics STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 50A VGS= 10V, ID= 0.4A 3 3.75 13 Min. 600 1 50 10 Typ. Max. Unit V A A A V 4.5 15 Table 6. Symbol gfs (1) Ciss Coss Crss Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS =15V, ID = 0.4A Min. Typ. 0.5 94 17.6 2.8 11 4.9 1 2.7 6.9 Max. Unit S pF pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 Coss eq(2). Equivalent output capacitance Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VGS=0, VDS =0V to 480V VDD=480V, ID = 0.8A VGS =10V (see Figure 21) 1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD=300 V, ID= 0.4A, RG=4.7, VGS=10V (see Figure 20) Min. Typ. 5.5 5 13 28 Max. Unit ns ns ns ns Table 8. Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=0.8A, VGS=0 ISD=0.8A, di/dt = 100A/s, VDD=20V, Tj=25C ISD=0.8A, di/dt = 100A/s, VDD=20V, Tj=150C 135 216 3.2 140 224 3.2 Test conditions Min Typ. Max 0.8 2.4 1.6 Unit A A V ns nC A ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% Table 9. Symbol BVGSO(1) 1. Gate-source zener diode Parameter Gate-source breakdown voltage Test conditions Igs=1mA (open drain) Min. 30 Typ. Max. Unit V The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. 5/16 Electrical characteristics STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for IPAK Figure 3. Thermal impedance for IPAK Figure 4. Safe operating area for TO-92 Figure 5. Thermal impedance for TO-92 Figure 6. Safe operating area for SOT-223 Figure 7. Thermal impedance for SOT-223 6/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations 7/16 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS vs temperature Figure 18. Maximum avalanche energy vs temperature Figure 19. Max Id Current vs Tc 8/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Test circuit 3 Test circuit Figure 21. Gate charge test circuit Figure 20. Switching times test circuit for resistive load Figure 22. Test circuit for inductive load Figure 23. Unclamped inductive load test switching and diode recovery times circuit Figure 24. Unclamped inductive waveform Figure 25. Switching time waveform 9/16 Package mechanical data STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 10/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Package mechanical data TO-92 MECHANICAL DATA mm. DIM. MIN. A b D E e e1 L R S1 W V 4.32 0.36 4.45 3.30 2.41 1.14 12.70 2.16 0.92 0.41 5 TYP MAX. 4.95 0.51 4.95 3.94 2.67 1.40 15.49 2.41 1.52 0.56 MIN. 0.170 0.014 0.175 0.130 0.094 0.044 0.50 0.085 0.036 0.016 5 TYP. MAX. 0.194 0.020 0.194 0.155 0.105 0.055 0.610 0.094 0.060 0.022 inch 11/16 Package mechanical data STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z TO-92 AMMOPACK mm. MIN. 4.45 3.30 TYP MAX. 4.95 3.94 1.6 2.3 0.41 12.5 5.65 2.44 -2 17.5 5.7 8.5 18.5 15.5 3.8 16 4 18 6 9 12.7 6.35 2.54 0.56 12.9 7.05 2.94 2 19 6.3 9.25 0.5 20.5 16.5 25 4.2 0.9 11 3 -1 1 0.11 -0.04 0.04 0.15 0.157 0.72 0.61 0.63 0.016 0.49 0.22 0.09 -0.08 0.69 0.22 0.33 0.71 0.23 0.35 0.5 0.25 0.1 MIN. 0.170 0.130 inch TYP. MAX. 0.194 0.155 0.06 0.09 0.022 0.51 0.27 0.11 0.08 0.74 0.24 0.36 0.02 0.80 0.65 0.98 0.16 0.035 0.43 DIM. A1 T T1 T2 d P0 P2 F1, F2 delta H W W0 W1 W2 H H0 H1 D0 t L l1 delta P 12/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Package mechanical data TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 0.45 0.48 6 6.4 4.4 15.9 9 0.8 0.8 0.3 0.95 0.6 0.6 6.2 6.6 4.6 16.3 9.4 1.2 1 0.017 0.019 0.236 0.252 0.173 0.626 0.354 0.031 0.031 2.2 0.9 0.7 0.64 5.2 mm TYP. MAX. 2.4 1.1 1.3 0.9 5.4 0.85 0.012 0.037 0.023 0.023 0.244 0.260 0.181 0.641 0.370 0.047 0.039 MIN. 0.086 0.035 0.027 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.031 0.212 0.033 H C A C2 L2 D B3 B6 A1 L = = 3 B5 B A3 = B2 = G = E L1 1 2 = 0068771-E 13/16 Package mechanical data STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z SOT-223 MECHANICAL DATA mm MIN. a b c d e1 e4 f g l1 l2 L 2.9 0.67 6.7 3.5 6.3 3 0.7 7 3.5 6.5 2.27 4.57 0.2 0.63 1.5 TYP. 2.3 4.6 0.4 0.65 1.6 MAX. 2.33 4.63 0.6 0.67 1.7 0.32 3.1 0.73 7.3 3.7 6.7 114.2 26.4 263.8 137.8 248 118.1 27.6 275.6 137.8 255.9 MIN. 89.4 179.9 7.9 24.8 59.1 mils TYP. 90.6 181.1 15.7 25.6 63 MAX. 91.7 182.3 23.6 26.4 66.9 12.6 122.1 28.7 287.4 145.7 263.8 DIM. L l2 e1 a b f d c e4 C l1 B C E g P008B 14/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Revision history 5 Revision history Table 10. Date 19-Mar-2003 15-May-2003 09-Jun-2003 17-Nov-2004 15-Feb-2005 07-Sep-2005 22-Feb-2006 01-Jun-2007 19-Jul-2007 Revision history Revision 3 4 5 6 7 8 9 10 11 First electronic version Removed DPAK Final datasheet Inserted SOT-223 Modified Figure 4. Inserted ecopack indication The document has been reformatted Order code table on first page has been updated Table 1.: Device summary has been updated Changes 15/16 STD1LNK60Z-1 - STQ1NK60ZR-AP - STN1NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 16/16 |
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