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IPD20N03L G OptiMOS=Buck converter series Feature N-Channel Logic Level Excellent Gate Charge x RDS(on) product (FOM) 175C operating temperature dv/dt rated Ideal for fast switching buck converters Pb.free lead plating, RoHS compliant Product Summary VDS RDS(on) ID 30 20 30 PG-TO252-3 V m A Type IPD20N03L G Package PG-TO252-3 Marking 20N03L Maximum Ratings,at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TC=25C TC=100C Symbol ID Value 30 25 Unit A Pulsed drain current TC=25C ID puls EAS dv/dt VGS Ptot Tj , Tstg 120 15 6 20 42 -55... +175 55/175/56 mJ kV/s V W C Avalanche energy, single pulse ID =15A, VDD =25V, RGS =25 Reverse diode dv/dt IS =30A, VDS =24V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2008-09-01 IPD20N03L G Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) Symbol min. RthJC RthJA RthJA - Values typ. max. 3.6 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0V, ID =1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID =25A Zero gate voltage drain current VDS =30V, VGS =0V, Tj=25C VDS =30V, VGS =0V, Tj=125C A 0.01 10 1 23.0 15.3 1 100 100 31 20 nA m Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =4.5V, ID=15A Drain-source on-state resistance VGS =10V, ID =15A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2008-09-01 IPD20N03L G Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics ID =25A Symbol Conditions min. Values typ. 28 560 230 62 1.3 6.2 31 23 18 max. 695 280 93 9.3 47 34 27 - Unit Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Ciss Coss Crss RG td(on) tr td(off) tf VGS =0V, VDS =25V, f=1MHz VDD =15V, VGS=10V, ID =15A, RG =12.7 - Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr VGS =0V, IF =30A VR =15V, IF =lS , diF /dt=100A/s Qgs Qgd Qg Qoss VDD =15V, ID =15A - 2.5 6.4 15 8 3.6 3.1 9.6 19 10 - VDD =15V, ID =15A, VGS =0 to 5V VDS =15V, ID =15A, VGS =0V V(plateau) VDD =15V, ID=15A IS ISM TC=25C - 1.1 26 13 30 120 1.4 32 16 Page 3 2008-09-01 Transconductance gfs VDS 2*ID *RDS(on)max , 14 - S pF ns nC V A V ns nC IPD20N03L G 1 Power dissipation Ptot = f (TC ) 50 IPD20N03L 2 Drain current ID = f (TC ) parameter: VGS 10 V 32 IPD20N03L W 40 A 24 35 Ptot 30 25 20 15 ID 20 16 12 8 10 5 0 0 4 20 40 60 80 100 120 140 160 C 190 0 0 20 40 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 IPD20N03L 4 Transient thermal impedance ZthJC = f (tp ) parameter : D = tp /T 10 1 IPD20N03L K/W A 10 0 tp = 24.0s 10 2 Z thJC ID /I D = V DS 10 -1 on ) 100 s R DS ( 10 10 1 -2 1 ms 10 -3 single pulse 10 ms 10 0 -1 10 DC 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 VDS Page 4 60 80 100 120 140 160 C 190 TC D = 0.50 0.20 0.10 0.05 0.02 0.01 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 2008-09-01 IPD20N03L G 5 Typ. output characteristic ID = f (VDS ); Tj=25C parameter: tp = 80 s A 75 IPD20N03L 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS 65 IPD20N03L Ptot = 42W VGS [V] a 3.0 b c 3.5 4.0 4.5 5.0 6.0 7.0 10.0 m 55 50 c d e h gf 60 55 e RDS(on) ID 50 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 d e f g 45 40 35 30 25 dh c 20 15 b h f g 10 5 VGS [V] = c 4.0 d 4.5 e f 5.0 6.0 g h 7.0 10.0 a 4 V 5 0 0 10 20 30 40 A 60 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 60 8 Typ. forward transconductance gfs = f(ID ); Tj=25C parameter: gfs 30 A 50 45 35 30 25 20 15 10 5 0 0 1 2 3 4 5.5 V VGS 0 0 5 10 15 20 5 10 15 g fs ID 40 S 20 A ID 30 Page 5 2008-09-01 IPD20N03L G 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 15 A, VGS = 10 V 50 IPD20N03L 10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 25 A 2.5 m 40 V max. RDS(on) 35 30 25 20 15 10 5 0 -60 C V GS(th) 1.5 typ. 98% 1 typ min. 0.5 -20 20 60 100 140 200 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj , tp = 80 s 10 3 IPD20N03L pF A 10 3 C Coss 10 2 Crss IF 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 0 0 Ciss 10 2 10 1 0 5 10 15 20 V 30 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2008-09-01 IPD20N03L G 13 Typ. avalanche energy EAS = f (Tj ) 16 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 30 A pulsed 16 V IPD20N03L mJ 12 E AS 10 VGS 8 6 4 2 0 25 45 65 85 105 125 145 C 185 Tj 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA 36 IPD20N03L V V (BR)DSS 34 33 32 31 30 29 28 27 -60 -20 20 60 100 140 C Tj Page 7 200 par.: ID = 15 A, VDD = 25 V, RGS = 25 12 10 0.2 VDS max 8 0.5 V DS max 6 0.8 VDS max 4 2 0 0 4 8 12 16 nC 24 QGate 2008-09-01 IPD20N03L G Package outline: PG-TO252-3 Page 8 2008-09-01 IPD20N03L G Page 9 2008-09-01 |
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