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PD - 96173
DIGITAL AUDIO MOSFET
Features
* Key Parameters Optimized for Class-D Audio Amplifier Applications * Low RDSON for Improved Efficiency * Low QG and QSW for Better THD and Improved Efficiency * Low QRR for Better THD and Lower EMI * 175C Operating Junction Temperature for Ruggedness * Can Deliver up to 300W per Channel into 4 Load in Half-Bridge Configuration Amplifier
G S D
IRFB5615PBF
Key Parameters
150 32 26 11 2.7 175
D
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
V m: nC nC C
G
D
S
TO-220AB
D S
G
Gate
Drain
Source
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation
Max.
150 20 35 25 140 144 72 0.96 -55 to + 175
Units
V
f f
c
A
W W/C
Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
C 300 10lbxin (1.1Nxm) Typ. --- 0.50 --- Max. 1.045 --- 62 Units C/W
Thermal Resistance
RJC RCS RJA Junction-to-Case
f
Parameter
Case-to-Sink, Flat, Greased Surface Junction-to-Ambient
f
Notes through are on page 2
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1
09/05/08
IRFB5615PBF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss LD LS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
Min.
150 --- --- 3.0 --- --- --- --- --- 35 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. Max. Units
--- 0.18 32 --- -13 --- --- --- --- --- 26 6.4 2.2 9.0 8.9 11 2.7 8.9 23.1 17.2 13.1 1750 155 40 175 4.5 7.5 --- --- 39 5.0 --- 20 250 100 -100 --- 40 --- --- --- --- --- 5.0 --- --- --- --- --- --- --- --- --- nH --- pF
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 21A V VDS = VGS, ID = 100A
e
mV/C A nA S VDS = 150V, VGS = 0V VDS = 150V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 50V, ID = 21A VDS =75V nC VGS = 10V ID = 21A See Fig. 6 and 19
VDD = 75V, VGS = 10VAe ns ID = 21A RG = 2.4 VGS = 0V VDS = 50V = 1.0MHz, See Fig.5
D
VGS = 0V, VDS = 0V to 120V Between lead, 6mm (0.25in.) from package and center of die contact
G
S
Avalanche Characteristics
Parameter Typ. Max. Units mJ A mJ
EAS IAR EAR
Single Pulse Avalanche Energyd Avalanche CurrentAg Repetitive Avalanche Energy
---
109
g
Min.
--- --- --- --- --- --- --- --- 80 312
See Fig. 14, 15, 17a, 17b
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current ISM VSD trr Qrr
Notes:
Typ. Max. Units
35 A 140 1.3 120 468 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 21A, VGS = 0V TJ = 25C, IF = 21A, VR =120V di/dt = 100A/s
(Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
e
e
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.51mH, RG = 25, IAS = 21A. Pulse width 400s; duty cycle 2%.
R is measured at TJ of approximately 90C. Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information
2
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IRFB5615PBF
1000
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
1000
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
10 5.0V 1
1 5.0V 60s PULSE WIDTH Tj = 25C 0.01 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
0.1
60s PULSE WIDTH
Tj = 175C 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
3.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
100
2.5
ID = 21A VGS = 10V
TJ = 175C TJ = 25C
2.0
10
1.5
1 VDS = 50V 60s PULSE WIDTH 0.1 2 4 6 8 10 12 14 16
1.0
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ Ciss = C gs + C gd, C ds SHORTED Crss = C gd Coss = C ds + C gd
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0 10.0 8.0 6.0 4.0 2.0 0.0
ID= 21A VDS= 120V VDS= 75V VDS= 30V
10000
C, Capacitance (pF)
Ciss 1000 Coss Crss
100
10 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
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Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
IRFB5615PBF
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100
100sec 1msec
ISD, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
T J = 175C 10 T J = 25C
10
10msec
DC
1 Tc = 25C Tj = 175C Single Pulse 0.1 1 10 100 1000
VGS = 0V 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
40
VGS(th) , Gate threshold Voltage (V)
Fig 8. Maximum Safe Operating Area
6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 ID = 100A ID = 250uA ID = 1.0mA ID = 1.0A
VDS, Drain-to-Source Voltage (V)
35 30 25 20 15 10 5 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
ID, Drain Current (A)
T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
10
Thermal Response ( Z thJC ) C/W
Fig 10. Threshold Voltage vs. Temperature
1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01
J R1 R1 J 1 2 R2 R2 R3 R3 3 R4 R4 C 1 2 3 4 4
Ri (C/W)
0.02324 0.26212 0.50102 0.25880
i (sec)
0.000008 0.000106 0.001115 0.005407
0.01 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1
0.001 1E-006
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
t1 , Rectangular Pulse Duration (sec)
4
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IRFB5615PBF
RDS(on), Drain-to -Source On Resistance ( )
0.4
EAS , Single Pulse Avalanche Energy (mJ)
500
0.35 0.3
ID = 21A
450 400 350 300 250 200 150 100 50 0 25 50 75 100
ID TOP 2.8A 5.3A BOTTOM 21A
0.25 0.2
0.15 0.1 TJ = 125C T J = 25C 4 6 8 10 12 14 16 18 20
0.05 0
125
150
175
Fig 12. On-Resistance Vs. Gate Voltage
100
Duty Cycle = Single Pulse
VGS, Gate -to -Source Voltage (V)
Starting T J , Junction Temperature (C)
Fig 13. Maximum Avalanche Energy Vs. Drain Current
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
Avalanche Current (A)
10
0.01 0.05 0.10
1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01
Fig 14. Typical Avalanche Current Vs.Pulsewidth
120 100 80 60 40 20 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 21A
Fig 15. Maximum Avalanche Energy Vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
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EAR , Avalanche Energy (mJ)
5
IRFB5615PBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Current Inductor Curent
Ripple 5% ISD
*
VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 17a. Unclamped Inductive Test Circuit
V DS V GS RG RD
Fig 17b. Unclamped Inductive Waveforms
VDS 90%
D.U.T.
+
- V DD
V10V GS
Pulse Width 1 s Duty Factor 0.1 %
10% VGS
td(on) tr t d(off) tf
Fig 18a. Switching Time Test Circuit
Current Regulator Same Type as D.U.T.
Fig 18b. Switching Time Waveforms
Id Vds Vgs
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
Vgs(th)
IG
ID
Current Sampling Resistors
Qgs1 Qgs2
Qgd
Qgodr
Fig 19a. Gate Charge Test Circuit
Fig 19b. Gate Charge Waveform
6
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IRFB5615PBF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
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6TT@H7G@9APIAXXA
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6TT@H7G GPUA8P9@
TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 09/2008
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