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| SN7002W SIPMOS(R) Small-Signal-Transistor Feature * N-Channel * Enhancement mode * Logic Level * dv/dt rated Drain pin 3 Gate pin1 Source pin 2 Product Summary VDS RDS(on) ID 60 5 0.23 PG-SOT-323 V A Type SN7002W SN7002W Package PG-SOT-323 PG-SOT-323 Pb-free Yes Yes Tape and Reel Information L6327: 3000 pcs/reel L6433: 10000 pcs/reel Marking sSN sSN Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value 0.23 0.18 Unit A Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg 0.92 6 20 0 (<250V) 0.5 -55... +150 55/150/56 W C kV/s V Reverse diode dv/dt IS=0.23A, VDS =48V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD class (JESD22-A114-HBM) Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 2.4 Page 1 2009-08-19 SN7002W Thermal Characteristics Parameter Characteristics Thermal resistance, junction - ambient at minimal footprint RthJS 250 K/W Symbol min. Values typ. max. Unit Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID=250A Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 60 0.8 Values typ. 1.4 max. 1.8 Unit V Gate threshold voltage, V GS = VDS ID=26A Zero gate voltage drain current VDS=60V, VGS =0, Tj=25C VDS=60V, VGS =0, Tj=150C A 4.1 2.3 0.1 5 10 7.5 5 nA Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=4.5V, ID=0.2A Drain-source on-state resistance VGS=10V, ID=0.23A Rev. 2.4 Page 2 2009-08-19 SN7002W Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =48V, ID =0.23A, VGS =0 to 10V VDD =48V, ID =0.23A Symbol Conditions min. Values typ. 0.21 34 7.2 3 2.4 2.8 6 8.5 max. 45 9.6 4.5 3.6 4.2 9 12.75 Unit g fs C iss C oss C rss td(on) tr td(off) tf VDS2*ID*RDS(on)max, ID=0.18A VGS=0, VDS=25V, f=1MHz 0.1 - S pF VDD=30V, VGS=10V, ID=0.23A, RG =6 ns - 0.11 0.42 1 3.4 0.17 0.63 1.5 - nC V(plateau) VDD =48V, ID = 0.23 A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD Reverse recovery time Reverse recovery charge trr Qrr VGS=0, IF=0.23A VR=30V, IF =lS , diF/dt=100A/s IS TA=25C - 0.85 10.8 3.2 0.23 0.92 1.2 16.2 4.8 A V ns nC Rev. 2.4 Page 3 2009-08-19 SN7002W 1 Power dissipation Ptot = f (TA) 0.55 SN7002W 2 Drain current ID = f (TA) parameter: VGS 10 V 0.26 SN7002W W 0.45 A 0.22 0.2 0.4 0.18 Ptot ID 20 40 60 80 100 120 0.35 0.3 0.25 0.2 0.15 0.16 0.14 0.12 0.1 0.08 0.06 0.1 0.05 0 0 0.04 0.02 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 C 10 1 SN7002W 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 3 SN7002W A K/W 10 0 DS =V /ID ) (on DS t = 25.0s p 10 2 R ZthJA 100 s ID 1 ms 10 1 10 -1 10 ms D = 0.50 10 0 0.20 0.10 10 -2 0.05 DC 10 -1 single pulse 0.02 0.01 10 -3 10 0 10 1 V 10 2 10 -2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Rev. 2.4 Page 4 tp 2009-08-19 SN7002W 5 Typ. output characteristic ID = f (VDS) parameter: Tj = 25 C, VGS 0.6 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: Tj = 25 C, VGS 7.5 A ID 0.4 10 7V 6V 5V 4.5V 4V 3.7V 3.5V 3.0V 6 5.25 4.5 3.75 3 3.1V 3.5V 3.7V 4.1V 4.5V 5V 6V 7V 10V 0.3 0.2 2.25 1.5 0.1 0.75 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V RDS(on) 5 0.1 0.2 0.3 0.4 0.5 A 0.7 VDS ID 7 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: Tj = 25 C 0.5 8 Typ. forward transconductance gfs = f(ID) parameter: Tj = 25 C 0.3 A S 0.3 gfs V ID 0.2 0.15 0.2 0.1 0.1 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 4.5 0 0 0.1 0.2 0.3 0.4 A 0.6 VGS Rev. 2.4 Page 5 ID 2009-08-19 SN7002W (.) Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 0.23 A, VGS = 10 V SN7002W 10 Typ. gate threshold voltage VGS(th) = f (Tj ) parameter: VGS = VDS ; ID =26A 2.2 V 98% 15 12 1.8 RDS(on) VGS(th) 11 10 9 8 7 6 5 4 3 2 1 0 -60 -20 20 60 100 C 1.6 typ. 1.4 1.2 1 98% 0.8 0.6 typ 0.4 0.2 180 0 -60 -20 20 2% 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 2 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj 10 0 SN7002W A Ciss pF 10 -1 C 10 1 Coss IF 10 -2 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 V 30 10 -3 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Rev. 2.4 Page 6 VSD 2009-08-19 SN7002W 13 Typ. gate charge VGS = f (QG); parameter: V DS , ID = 0.16 A pulsed, Tj = 25 C 16 V SN7002W SN7002W 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) 72 V V(BR)DSS 0.2 VDS max 0.5 VDS max 0.8 VDS max 12 68 66 64 62 VGS 10 8 6 60 4 58 56 54 -60 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 nC 1.7 -20 20 60 100 C 180 QG Tj Rev. 2.4 Page 7 2009-08-19 SN7002W Rev. 2.4 Page 8 2009-08-19 |
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