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| BAS516 High Speed Switching Diodes P b Lead(Pb)-Free Features: * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak forward current: max. 500 mA SWITCHING DIODE 250 mAMPERES 75 VOLTS 1 Applications: * High-speed switching in e.g. surface mounted circuits. 2 SOD-523 Description: * The BAS516 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD-523 (SC79) SMD plastic package. SOD-523 Outline Dimensions Unit:mm SOD-523 Dim A B C D E J K Min Max 1.10 1.30 0.70 0.90 0.50 0.70 0.25 0.35 0.15 0.25 0.07 0.20 1.50 1.70 PIN 1. CATHODE 2. ANODE WEITRON http://www.weitron.com.tw 1/4 06-Jan-06 BAS516 Maximum Ratings DCReverseVoltage Mean Rectifying Current Peak Forward Surge Current @t=1s Operating Junction Temperature Range Storage Temperature Range (TA=25C Unless otherwise noted) Characteristic Symbol VR IO IFSM TJ Tstg Value 75 250 500 +150 -65 to +150 Unit V mA mA C C Electrical Characteristics Characteristic Forward Voltage IF=1mA IF=10mA IF=50mA IF=150mA Reverse Current VR=25V VR=75V Capacitance Between Terminals VR=0,f=1MHz Reverse Recovery Time IF = 10 mA , IR = 10 mA, RL = 100 Measured at IR = 1mA; see Fig.6 (TA=25C Unless otherwise noted) Symbol VF1 VF2 VF3 VF4 IR1 IR2 CT Trr Min - Typ - Max 0.715 0.855 1.0 1.25 0.03 1.0 1.0 4.0 Unit V A pF ns - - Device Marking Item BAS516 Marking 6 , 61 Eqivalent Circuitdiagram 1 2 WEITRON http://www.weitron.com.tw 2/4 06-Jan-06 BAS516 Typical Characteristics 500 300 IF, FORWARD CURRENT (mA) IF, FORWARD CURRENT (mA) 400 Tj= 150C typical values 200 Tj= 25C typical values 100 Tj= 25C maximum values 0 0 1 2 300 200 100 0 0 50 100 150 Fig.1 Maximum permissible continuous forward current as a function of soldering point temperature. 100 Ts ( C) o 200 VF, FORWARD VOLTAGE (V) Fig.2 Forward current as Forward voltage IFSM, Peak forward surge current (A) 10 1 0.1 1 10 100 1000 Based on square wave currents; Tj = 25 C prior to surge. tp (s) 10000 Fig.3 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 105 CAPACITANCE BETWEEN TERMINALS : CT (pF) 0.6 f = 1 MHz IR,REVERSE CURRENT (nA) 10 4 V R = 75 V 0.4 Tj= 25C 103 max 75 V 10 2 25 V typ 0.2 10 typ 0 100 200 0 0 4 8 12 16 Fig.4 Reverse current as Junction temperature TJ,Junction temperature (C) Fig. 5 Capacitance between terminals characteristics VR,Reverse voltage (V) WEITRON http://www.weitron.com.tw 3/4 06-Jan-06 BAS516 Typical Characteristics tr D.U.T. R = 50 S V = VR I F x R S IF SAMPLING OSCILLOSCOPE R i = 50 VR 90% 10% tp t IF t rr t (1) input signal (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor = 0.05; Oscilloscope: rise time tr = 0.35 ns. output signal Fig. 6 Reverse recovery voltage test circuit and waveforms WEITRON http://www.weitron.com.tw 4/4 06-Jan-06 |
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