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FDP7N50F / FDPF7N50F N-Channel MOSFET
November 2007
UniFETTM
FDP7N50F / FDPF7N50F
N-Channel MOSFET, FRFET
500V, 6A, 1.15 Features
* RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 3A * Low gate charge ( Typ. 15nC) * Low Crss ( Typ. 6.3pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS compliant
tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
TO-220F
GD S
FDPF Series
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25oC) - Derate above 25oC -Continuous (TC = 25oC) -Continuous (TC = 100oC) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) 200 1.59 -55 to +150 300 6 3.6 24 270 6 20 4.5 38.5 0.3 FDP7N50F 500 30 6* 3.6* 24* FDPF7N50F Units V V A A mJ A mJ V/ns W W/oC
oC oC
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Ambient FDP7N50F 1.4 0.5 62.5 FDPF7N50F 4.0 62.5
oC/W
Units
(c)2007 Fairchild Semiconductor Corporation FDP7N50F / FDPF7N50F Rev. A
1
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FDP7N50F / FDPF7N50F N-Channel MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking FDP7N50F FDPF7N50F Device FDP7N50F FDPF7N50F Package TO-220 TO-220F Reel Size Tape Width Quantity 50 50
Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Body Leakage Current ID = 250A, VGS = 0V, TJ = 25oC ID = 250A, Referenced to 25 C VDS = 500V, VGS = 0V VDS = 400V, TC = 125oC VGS = 30V, VDS = 0V
o
500 -
0.5 -
10 100 100
V V/oC A nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = 250A VGS = 10V, ID = 3A VDS = 40V, ID = 3A
(Note 4)
3.0 -
0.95 4.3
5.0 1.15 -
V S
Dynamic Characteristics
Ciss Coss Crss Qg(tot) Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = 400V, ID = 6A VGS = 10V
(Note 4, 5)
VDS = 25V, VGS = 0V f = 1MHz
-
720 85 6.3 15 4.5 6
960 115 10 20 -
pF pF pF nC nC nC
Switching Characteristics
td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = 250V, ID = 6A RG = 25
(Note 4, 5)
-
17 30 35 20
45 70 80 50
ns ns ns ns
Drain-Source Diode Characteristics
IS ISM VSD trr Qrr Maximum Continuous Drain to Source Diode Forward Current Maximum Pulsed Drain to Source Diode Forward Current Drain to Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, ISD = 6A VGS = 0V, ISD = 6A dIF/dt = 100A/s
(Note 4)
-
85 0.15
6 24 1.5 -
A A V ns C
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 13mH, IAS = 6A, VDD = 50V, RG = 25, Starting TJ = 25C 3. ISD 6A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP7N50F / FDPF7N50F Rev. A
2
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FDP7N50F / FDPF7N50F N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
28
VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
Figure 2. Transfer Characteristics
20
10
ID,Drain Current[A]
10
ID,Drain Current[A]
150 C
o
25 C
o
1
0.1
0.04 0.1
*Notes: 1. 250s Pulse Test 2. TC = 25 C
o
*Notes: 1. VDS = 20V 2. 250s Pulse Test
1 VDS,Drain-Source Voltage[V]
10
20
1 5 6 7 8 9 VGS,Gate-Source Voltage[V] 10
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
2.4
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
100
RDS(ON) [], Drain-Source On-Resistance
IS, Reverse Drain Current [A]
1.8
10
150 C
o
25 C
o
VGS = 10V
1.2
VGS = 20V
1
*Notes: 1. VGS = 0V
0.6 0 4
*Note: TJ = 25 C
o
8 12 ID, Drain Current [A]
16
0.1 0.0
2. 250s Pulse Test
0.5 1.0 1.5 VSD, Body Diode Forward Voltage [V]
2.0
Figure 5. Capacitance Characteristics
1500
Coss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
Figure 6. Gate Charge Characteristics
10
VGS, Gate-Source Voltage [V]
VDS = 100V VDS = 250V VDS = 400V
1200
Ciss
8
Capacitances [pF]
900
*Note: 1. VGS = 0V 2. f = 1MHz
6
600
Crss
4
300
2
*Note: ID = 6A
0 0.1
0
1 10 VDS, Drain-Source Voltage [V] 30
0
4 8 12 Qg, Total Gate Charge [nC]
16
FDP7N50F / FDPF7N50F Rev. A
3
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FDP7N50F / FDPF7N50F N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. Maximum Safe Operating Area - FDPF7N50F
50
10s
BVDSS, [Normalized] Drain-Source Breakdown Voltage
1.1
ID, Drain Current [A]
10
100s 1ms 10ms 100ms
1.0
1
Operation in This Area is Limited by R DS(on)
DC
0.9
*Notes: 1. VGS = 0V 2. ID = 250A
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.8 -100
-50 0 50 100 150 o TJ, Junction Temperature [ C]
200
0.01 1 10 100 VDS, Drain-Source Voltage [V] 1000
Figure 9. Maximum Drain Current vs. Case Temperature - FDPF7N50F
6.0
4.8 ID, Drain Current [A]
3.6
2.4
1.2
0.0 25
50 75 100 o 125 TC, Case Temperature [ C]
150
Figure 10. Transient Thermal Response Curve - FDPF7N50F
10
1
ZJC(t), Thermal Response
D=0.5
10
0
0.2 0.1 0.05
PDM PDM t1
* Notes :
10
-1
0.02 0.01
t1 t2
o
t2
10
-2 -5
single pulse
10
-4
1. Z JC(t) = 4.0 C/W Max. 2. Duty Factor, D=t1/t2 3. T JM - T C = P DM * Z JC(t)
10
10
-3
10
-2
10
-1
10
0
10
1
t1, Square Wave Pulse Duration [sec]
FDP7N50F / FDPF7N50F Rev. A
4
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FDP7N50F / FDPF7N50F N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP7N50F / FDPF7N50F Rev. A
5
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FDP7N50F / FDPF7N50F N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ V
DS
_ I
SD
L D r iv e r R
G
S am e T ype as DUT
V
DD
V
GS
* d v / d t c o n t r o lle d b y R G * I S D c o n t r o lle d b y p u ls e p e r io d
V GS ( D r iv e r )
G a te P u ls e W id t h D = -------------------------G a t e P u ls e P e r io d
10V
IF M , B o d y D io d e F o r w a r d C u r r e n t
I SD (DUT ) IR M
d i/d t
B o d y D io d e R e v e r s e C u r r e n t
V DS (DUT )
B o d y D io d e R e c o v e r y d v / d t
V
SD
V
DD
B o d y D io d e F o r w a r d V o lta g e D r o p
FDP7N50F / FDPF7N50F Rev. A
6
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FDP7N50F / FDPF7N50F N-Channel MOSFET
Mechanical Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) o3.60 0.10 (1.70) 4.50 0.20
1.30 -0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 -0.05
+0.10
2.40 0.20
10.00 0.20
FDP7N50F / FDPF7N50F Rev. A
7
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FDP7N50F / FDPF7N50F N-Channel MOSFET
Mechanical Dimensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
15.87 0.20
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FDP7N50F / FDPF7N50F Rev. A
8
FDP7N50F / FDPF7N50F N-Channel MOSFET
TRADEMARKS
The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R)
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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
9 FDP7N50F / FDPF7N50F Rev. A
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