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| STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 , 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type STP12NK60Z STF12NK60Z STW12NK60Z VDSS (@Tjmax) 650 V 650 V 650 V RDS(on) max ID PW 3 1 2 1 3 2 <0.640 10 A 150 W <0.640 10 A 35 W <0.640 10 A 150 W TO-220FP TO-220 Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. 2 1 3 TO-247 Application Internal schematic diagram D(2) Switching applications Description The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. G(1) S(3) AM01476v1 Table 1. Device summary Marking P12NK60Z F12NK60Z W12NK60Z Package TO-220 TO-220FP TO-247 Packaging Tube Tube Tube Order codes STP12NK60Z STF12NK60Z STW12NK60Z October 2009 Doc ID 11324 Rev 7 1/15 www.st.com 15 Contents STP12NK60Z, STF12NK60Z, STW12NK60Z Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 Test circuits .............................................. 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID ID IDM (2) Absolute maximum ratings Value Parameter TO-220, TO-247 TO-220FP Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor 10 6.3 40 150 1.2 600 30 10 (1) 6.3 (1) Unit V V A A A W W/C V V/ns 2500 -55 to 150 150 V C C 40 (1) 35 0.27 2500 4.5 PTOT VESD(G-S) Gate source ESD (HBM-C=100 pF, R=1.5 k) dv/dt (3) Peak diode recovery voltage slope Insulation withstand voltage (RMS) from all three leads to external heat sink (t =1 s;TC = 25 C) Storage temperature Max operating junction temperature VISO Tstg Tj 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 10 A, di/dt 200 A/s, VDD = 480 V Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Value Parameter TO-220 TO-247 TO-220FP Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose 62.5 0.83 50 300 3.6 62.5 C/W C/W C Unit Table 4. Symbol IAS EAS Avalanche characteristics Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, ID=IAS, VDD=50 V) Value 10 260 Unit A mJ Doc ID 11324 Rev 7 3/15 Electrical characteristics STP12NK60Z, STF12NK60Z, STW12NK60Z 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS = 0 VDS = Max rating VDS = Max rating, TC=125 C VGS = 20 V VDS = VGS, ID = 100 A VGS = 10 V, ID = 5 A 3 3.75 0.53 Min. 600 1 50 10 4.5 0.64 Typ. Max. Unit V A A A V Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq. (2) td(on) tr td(off) tf Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Test conditions VDS=10 V, ID = 5 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. Typ. 9 1740 195 49 101 22.5 18.5 55 31.5 59 10 32 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC - - VGS = 0, VDS = 0 to 480 V VDD = 300 V, ID = 5 A, RG=4.7 VGS = 10 V (see Figure 19) VDD = 480 V, ID = 10 A, VGS = 10 V (see Figure 20) - - - - - - 1. Pulsed: pulse duration = 300 s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Electrical characteristics Table 7. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 10 A, VGS = 0 ISD = 10 A, di/dt = 100 A/s VDD = 50 V (see Figure 24) ISD = 10 A, di/dt = 100 A/s VDD = 50 V, Tj = 150 C (see Figure 24) Test conditions Min 358 3 17 460 4.2 18.2 Typ. Max 10 40 1.6 Unit A A V ns C A ns C A - 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5% Table 8. Symbol BVGSO (1) Gate-source Zener diode Parameter Gate-Source breakdown voltage Test conditions Igs= 1 mA (open drain) Min 30 Typ Max Unit V 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components. Doc ID 11324 Rev 7 5/15 Electrical characteristics STP12NK60Z, STF12NK60Z, STW12NK60Z 2.1 Figure 2. Electrical characteristics (curves) Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. ID (A) Safe operating area for TO-247 Figure 5. Thermal impedance for TO-247 ai s 10 10s Op Lim erat ite ion d b in y m this ax a r Re DS (o 100s 1ms Tj=150C Tc=25C Sinlge pulse 10ms 1 0.1 0.1 n) 1 10 100 VDS(V) Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP 6/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Figure 8. Output characteristics Figure 9. Electrical characteristics Transfer characteristics Figure 10. Transconductance Figure 11. Static drain-source on resistance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Doc ID 11324 Rev 7 7/15 Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature STP12NK60Z, STF12NK60Z, STW12NK60Z Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized breakdown voltage vs temperature Figure 18. Maximum avalanche energy vs temperature EAS (mJ) 260 240 220 200 180 160 140 120 100 80 60 40 20 0 0 ID=10 A VDD=50 V HV27640 20 40 60 80 100 120 140 TJ(C) 8/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Test circuits 3 Test circuits Figure 20. Gate charge test circuit VDD 12V 2200 Figure 19. Switching times test circuit for resistive load 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 21. Test circuit for inductive load Figure 22. Unclamped inductive load test switching and diode recovery times circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 23. Unclamped inductive waveform V(BR)DSS VD Figure 24. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 Doc ID 11324 Rev 7 9/15 Package mechanical data STP12NK60Z, STF12NK60Z, STW12NK60Z 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Package mechanical data TO-220 type A mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.48 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 Typ Max 4.60 0.88 1.70 0.70 15.75 0015988_Rev_S Doc ID 11324 Rev 7 11/15 Package mechanical data STP12NK60Z, STF12NK60Z, STW12NK60Z TO-220FP mechanical data mm Dim. Min. A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia 28.6 9.8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10 16 30.6 10.6 3.6 16.4 9.3 3.2 Typ. Max. 4.6 2.7 2.75 0.7 1 1.70 1.5 5.2 2.7 10.4 L7 E A B Dia L6 L5 F1 F2 F D H G1 G L2 L 3 L4 7012510_Rev_J 12/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Package mechanical data TO-247 mechanical data Dim. A A1 b b1 b2 c D E e L L1 L2 oP oR S 3.55 4.50 5.50 14.20 3.70 18.50 3.65 5.50 mm. Min. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.80 4.30 Typ. Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 Doc ID 11324 Rev 7 13/15 Revision history STP12NK60Z, STF12NK60Z, STW12NK60Z 5 Revision history Table 9. Date 12-Apr-2004 06-Sep-2005 13-Sep-2005 05-Sep-2006 26-Apr-2007 25-Jan-2008 13-Oct-2009 Document revision history Revision 1 2 3 4 5 6 7 First release Inserted ecopack indication Final version The document has been reformatted The document has been updated on 1: Electrical ratings Modified: dv/dt value on Table 2: Absolute maximum ratings Added new package, mechanical data: TO-247 Changes 14/15 Doc ID 11324 Rev 7 STP12NK60Z, STF12NK60Z, STW12NK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com Doc ID 11324 Rev 7 15/15 |
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