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Datasheet File OCR Text: |
LED - Chip Preliminary Radiation Red Type Point Source 10.04.2007 Technology AlInGaP/GaAs ELC-645-29-50 rev. 03/07 Electrodes N (cathode) up typ. dimensions (m) O 150 typ. thickness 360 - 10 + 20 R 30 170 (20) m cathode gold alloy, 1.5 m anode gold alloy, 0.5 m PS-03 310 245 450 + 20 -10 180 Maximum Ratings Tamb = 25C, unless otherwise specified Test Parameter conditions Forward current (DC) 180 Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Reverse voltage Radiant power* Luminous intensity* Peak wavelength Spectral bandwidth at 50% Switching time IF = 5 mA IR = 10 A IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA IF = 5 mA Symbol VF VR e IV p 0.5 tr , t f 4 100 5 200 7 645 26 40/30 Min Typ 1.85 Max 2.4 Unit V V W mcd nm nm ns *Measured on bare chip on TO-18 header with EPIGAP equipment R 5 15 Symbol IF Min Typ Max 35 Unit mA Labeling Type ELC-645-29-50 Lot N IV(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
Price & Availability of ELC-645-29-50
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