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The innovative Semiconductor Company! HVV1214-100 HigH Voltage, HigH Ruggedness
TM
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty For Ground Based Radar Applications
FeatuRes
* Silicon MOSFET Technology * Operation from 24V to 50V * High Power Gain * Extreme Ruggedness * Internal Input and Output Matching * Excellent Thermal Stability * All Gold Bonding Scheme
tYPiCal PeRFoRManCe
High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications. MODE Class AB FREQUENCY
(MHz)
VDD
(V)
IDQ
(mA)
Power
(W)
GAIN
(dB)
(%)
IRL
(dB)
VSWR 20:1
1400
50
100
120
20
45
-8
Table 1: Typical RF Performance in broadband text fixture at 25C temperature with RF pulse conditions of pulse width = 200s and pulse period = 2ms.
desCRiPtion
The high power HVV1214-100 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 1200MHz to 1400MHz. The high voltage HVVFETTM technology produces over 100W of pulsed output power while offering high gain, high efficiency, and ease of matching with a 50V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power.
oRdeRing inFoRMation
Device Part Number: HVV1214-100 Demo Kit Part Number: HVV1214-100-EK Available through Richardson Electronics (http://rfwireless.rell.com/)
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044
ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A 12/11/08 1
HVV1214-100 High Voltage, High Ruggedness The innovative Semiconductor Company! L-Band Radar High Power Transistor HVV1214-100PulsedVoltage, High Ruggedness 1200-1400 MHz, 200s Pulse, 10% Duty L-Band Radar Pulsed Power HVV1214-100 HigH Voltage, HigH Ruggedness Transistor For Ground Based Radar Applications 1200-1400 MHz, 200s Pulse, 10% Radar Pulsed Power Transistor L-Band Duty For Ground Based Radar ApplicationsMHz, 200s Pulse, 10% Duty 1200-1400
TM

ELECTRICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS eleCtRiCal CHaRaCteRistiCs
Parameter Drain-Source Breakdown Drain Leakage Current Gate Leakage Current Power Gain Input Return Loss Drain Efficiency Gate Quiescent Voltage Threshold Voltage
For Ground Based Radar Applications
Conditions Min VGS=0V,ID=5mA 95 VGS=0V,VDS=50V VGS=5V,VDS=0V F=1400MHz 18 F=1400MHz F=1400MHz 43 VDD=50V,IDQ=100mA 1.1 VDD=5V, ID=300A 0.7
Typical Max 102 50 200 1 5 20 -8 -5 45 1.45 1.8 1.2 1.7 Unit V A A dB dB % V V
TheThe innovative Semiconductor Company! innovative Semiconductor Company!
Symbol VBR(DSS) IDSS IGSS GP1 IRL1 D1 VGS(Q)2 VTH PULSE
Symbol Parameter Conditions Rise Time F=1400MHz Tr1 Fall Time F=1400MHz T1 f PD1 Pulse Droop F=1400MHz THERMAL PERFORMANCE
CHARACTERISTICS PULSE CHaRaCteRistiCs Pulse CHARACTERISTICS
- - - <25 50 <15 50 0.35 0.5
Min Typical Max
Unit nS nS dB
THERMAL PeRFoRManCe tHeRMal PERFORMANCE

RUGGEDNESS PERFORMANCE

at rated output power and nominal operating voltage across the frequency band of operation. 1 NOTE: : All parameters measured under pulsed conditions at 120W output power measured at the pulsed conditions at 120W output power in a 1.) NOTE: All parameters measured under 5% point of the pulse with pulse width = 200sec, duty cycle = 10% and VDD = 50V, IDQ = 100mA
The HVV1214-100 device an 20:1 VSWR is capable of withstanding output load mismatch corresponding to a

RUGGEDNESS PERFORMANCE
Ruggedness PeRFoRManCe

measured at the test fixture. the pulse with pulse of broadband matched5% pointmeasured under pulsed width = 200sec, duty cycle = 10% 1.) NOTE: All parameters conditions at 120W output power 2 and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. NOTE: Amount of gate voltageof the pulse withnominalwidth = 200sec, duty cycle = 10% measured at the 5% point required to attain pulse quiescent current.
2.) NOTE: Amount of gate voltage required to attain nominal quiescent current. and VDD = 50V, IDQ = 100mA in a broadband matched test fixture. 2.) NOTE: Amount of gate voltage required to attain nominal quiescent current.
ISO 9001:2000 Certified ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi ISO 9001:2000 Certified Semiconductors, Inc. (c) 2008 (866) Semiconductors, Inc.visitAll Rights Reserved. Tel: HVVi 429-HVVi (4884) or All Rights Reserved. www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-DS06A EG-01-DS06A 12/12/08 12/11/08 EG-01-DS06A 2 2 12/12/08 2
HVVi Semiconductors, Inc. HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044 Phoenix, AZ. 85044 10235 S. 51st St. Suite 100 Phoenix, Az. 85044
The innovative Semiconductor Company!
HVV1214-100 High Voltage,HVV1214-100 HigH Voltage, HigH Ruggedness High Ruggedness L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse,1200-1400 MHz, 200s Pulse, 10% Duty 10% Duty For Ground Based Radar Applications Based Radar Applications For Ground
TM
Zo = 10
The innovative Semiconductor Company!
ZIN*
ZOUT*
1200MHz 1200MHz
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Phoenix, Az. 85044
10235 S. 51st St. Suite 100 Phoenix, AZ. 85044
Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com ISO 9001:2000 Certified (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
EG-01-DS06A 12/12/08 EG-01-DS06A 3
12/11/08 3
HVV1214-100 High Voltage, High Ruggedness L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty The innovative Semiconductor Company! For Ground Based Radar Applications
The innovative Semiconductor Company!

Demonstration Circuit Board Picture Demonstration Board Outline Demonstration Circuit Board Picture (AutoCAD Files for Demonstration Board available online at www.hvvi.com/products) (AutoCAD Files Demonstration Board available online at at www.hvvi.com/products) (AutoCAD Files forfor Demonstration Board available onlinewww.hvvi.com/products)

Demonstration Board Outline Demonstration Board Outline
HVV1214-100 HigH Voltage, HigH Ruggedness HVV1214-100 High Voltage, High Ruggedness L-Band Radar L-Band Radar Pulsed Power Transistor Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty 1200-1400 MHz, 200s Pulse, 10% Duty For Ground Based Radar Applications For Ground Based Radar Applications
TM
Demonstration Circuit Board Picture
HVV1214-100 Demonstration Circuit Board Bill of Materials
HVV1214-100 Demonstration Circuit Board Bill of Materials HVVi Semiconductors, Inc. ISO 9001:2000 Certified 10235 S. 51st St. Suite 100 Tel: (866) 429-HVVi (4884) or visit www.hvvi.com Phoenix, Az. 85044 (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com (c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
HVV1214-100 Demonstration Circuit Board Bill of Materials
EG-01-DS06A 12/12/08 4
EG-01-DS06A 12/11/08 4
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100
ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
EG-01-DS06A 12/12/08
The innovative Semiconductor Company! HVV1214-100 HigH Voltage, HigH Ruggedness
TM
HVV1214-100 High Voltage, High Ruggedness Pulse, 10% Duty 1200-1400 MHz, 200s L-Band Radar Pulsed Power For Ground Based Radar Applications Transistor 1200-1400 MHz, 200s Pulse, 10% Duty For Ground diMensions Applications Based Radar PaCKage
PACKAGE DIMENSIONS

L-Band Radar Pulsed Power Transistor
DRAIN
GATE
SOURCE
The innovative Semiconductor Company!
Note: Drawing is not actual size.
Note: Drawing is not actual size.
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi 9001:2000 logo are trademarks of HVVi Semiconductors, name and Certified ISO EG-01-DS06A HVVi Semiconductors, Inc. Inc. Tel: (866) 429-HVVi (4884) or visit www.hvvi.com 12/11/08 10235 S. 51st St. Suite 100
Phoenix, AZ. 85044
HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100
HVVi Semiconductors, Inc. (HVVi) reserves the right to make changes to information published in this document at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Information in this document is believed to be accurate and reliable. However, HVVi does not give any representations or warranties, either express or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Use of HVVi products as critical components in life support systems is not authorized. No licenses, either express or implied, are conveyed under any HVVi intellectual property rights, including any patent rights. The HVVi name and logo are trademarks of HVVi Semiconductors, Inc.
(c) 2008 HVVi Semiconductors, Inc. All Rights Reserved.
ISO 9001:2000 Certified Tel: (866) 429-HVVi (4884) or visit www.hvvi.com
5
EG-01-DS06A 12/12/08

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