View PESD3V3L1UA_4967990.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PESD3V3L1UA; PESD3V3L1UB; PESD3V3L1UL
Low capacitance unidirectional ESD protection diodes
Rev. 01 -- 17 June 2009 Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from the damage caused by ESD and other transients.
Table 1. Product overview Package NXP PESD3V3L1UA PESD3V3L1UB PESD3V3L1UL SOD323 SOD523 SOD882 JEITA SC-76 SC-79 very small ultra small and flat lead leadless ultra small Package configuration
Type number
1.2 Features
I Unidirectional ESD protection of one line I Low diode capacitance: Cd = 34 pF I Low clamping voltage: VCL = 11 V I Very low leakage current: IRM = 100 nA I ESD protection up to 30 kV I IEC 61000-4-2; level 4 (ESD) I AEC-Q101 qualified
1.3 Applications
I Computers and peripherals I Audio and video equipment I Cellular handsets and accessories I Communication systems I Subscriber Identity Module (SIM) card protection I Portable electronics I FireWire I High-speed data lines
1.4 Quick reference data
Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol VRWM Cd Parameter reverse standoff voltage diode capacitance f = 1 MHz; VR = 0 V Conditions Min Typ 34 Max 3.3 40 Unit V pF
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
2. Pinning information
Table 3. Pin 1 2 Pinning Description cathode anode
[1]
Simplified outline
Graphic symbol
PESD3V3L1UA; PESD3V3L1UB
1
001aab540
2
1
2
006aaa152
PESD3V3L1UL 1 2 cathode anode
[1]
1
2
1
2
006aaa152
Transparent top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4. Ordering information Package Name PESD3V3L1UA PESD3V3L1UB PESD3V3L1UL SC-76 SC-79 Description plastic surface-mounted package; 2 leads plastic surface-mounted package; 2 leads leadless ultra small plastic package; 2 terminals; body 1.0 x 0.6 x 0.5 mm Version SOD323 SOD523 SOD882 Type number
4. Marking
Table 5. Marking codes Marking code 1H Z7 XW Type number PESD3V3L1UA PESD3V3L1UB PESD3V3L1UL
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
2 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
5. Limiting values
Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP IPP Tj Tamb Tstg
[1] [2]
Parameter peak pulse power peak pulse current junction temperature ambient temperature storage temperature
Conditions tp = 8/20 s tp = 8/20 s
[1][2] [1][2]
Min -55 -65
Max 45 4.5 150 +150 +150
Unit W A C C C
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 to pin 2.
Table 7. ESD maximum ratings Tamb = 25 C unless otherwise specified. Symbol VESD Parameter electrostatic discharge voltage Conditions IEC 61000-4-2 (contact discharge) machine model MIL-STD-883 (human body model)
[1] Device stressed with ten non-repetitive ESD pulses.
[1]
Min -
Max 30 400 10
Unit kV V kV
Table 8. Standard
ESD standards compliance Conditions > 15 kV (air); > 8 kV (contact) > 4 kV
IEC 61000-4-2; level 4 (ESD) MIL-STD-883; class 3 (human body model)
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
3 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
001aaa631
120 IPP (%) 80 100 % IPP; 8 s
001aaa630
IPP 100 % 90 %
e-t 50 % IPP; 20 s
40
10 % tr = 0.7 ns to 1 ns 0 10 20 30 t (s) 40 30 ns 60 ns t
0
Fig 1.
8/20 s pulse waveform according to IEC 61000-4-5
Fig 2.
ESD pulse waveform according to IEC 61000-4-2
6. Characteristics
Table 9. Characteristics Tamb = 25 C unless otherwise specified. Symbol VRWM IRM VBR Cd VCL Parameter reverse standoff voltage reverse leakage current breakdown voltage diode capacitance clamping voltage IPP = 1 A IPP = 4.5 A rdif VF
[1] [2]
Conditions VRWM = 3.3 V IR = 5 mA f = 1 MHz; VR = 0 V
[1][2]
Min 5.3 -
Typ 100 5.6 34
Max 3.3 300 6.0 40
Unit V nA V pF
-
-
8 11 30 1.2
V V V
differential resistance forward voltage
IR = 5 mA IF = 200 mA
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5. Measured from pin 1 to pin 2.
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
4 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
I 35 Cd (pF) 30
006aab563
25
-VCL -VBR -VRWM -IRM -IR
V
20 - 15 P-N +
10 0 1 2 3 4 VR (V) 5
-IPP
006aaa407
f = 1 MHz; Tamb = 25 C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
Fig 4.
V-I characteristics for a unidirectional ESD protection diode
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
5 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
ESD TESTER RZ CZ DUT (Device Under Test)
450
RG 223/U 50 coax
4 GHz DIGITAL OSCILLOSCOPE 10x ATTENUATOR
50
IEC 61000-4-2 network CZ = 150 pF; RZ = 330
vertical scale = 10 A/div horizontal scale = 15 ns/div
vertical scale = 6 V/div horizontal scale = 100 ns/div
GND GND
unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network)
vertical scale = 10 A/div horizontal scale = 15 ns/div GND GND
vertical scale = 6 V/div horizontal scale = 100 ns/div unclamped -8 kV ESD pulse waveform (IEC 61000-4-2 network) clamped -8 kV ESD voltage waveform (IEC 61000-4-2 network)
006aab564
Fig 5.
ESD clamping test setup and waveforms
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
6 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
7. Application information
The PESD3V3L1Ux series is designed for the protection of one unidirectional data or signal line from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESD3V3L1Ux series provides a surge capability up to 45 W per line for an 8/20 s waveform.
line to be protected (positive signal polarity)
line to be protected (negative signal polarity)
PESD3V3L1Ux
PESD3V3L1Ux
GND
GND
unidirectional protection of one line
006aab614
Fig 6.
Application diagram
Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT). The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
7 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
9. Package outline
1.35 1.15 1 0.45 0.15 1.1 0.8 0.85 0.75 1 0.65 0.58
2.7 2.3
1.8 1.6
1.65 1.25 1.55 1.15
2 0.40 0.25 Dimensions in mm 0.25 0.10 03-12-17 Dimensions in mm 0.34 0.26
2 0.17 0.11 02-12-13
Fig 7.
Package outline PESD3V3L1UA (SOD323/SC-76)
Fig 8.
Package outline PESD3V3L1UB (SOD523/SC-79)
0.62 0.55 2
0.50 0.46
0.30 0.22
0.65 0.30 0.22 0.55 0.47 Dimensions in mm
1.02 0.95
1
cathode marking on top side 03-04-17
Fig 9.
Package outline PESD3V3L1UL (SOD882)
10. Packing information
Table 10. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD3V3L1UA PESD3V3L1UB PESD3V3L1UL
[1]
Package SOD323 SOD523 SOD882
Description 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel 4 mm pitch, 8 mm tape and reel 2 mm pitch, 8 mm tape and reel
Packing quantity 3000 -115 -115 8000 -315 10000 -135 -135 -315
For further information and the availability of packing methods, see Section 14.
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
8 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
11. Soldering
3.05 2.1 solder lands solder resist 1.65 0.95 0.5 (2x) 0.6 (2x) solder paste occupied area 2.2 0.5 (2x) 0.6 (2x) Dimensions in mm
sod323_fr
Fig 10. Reflow soldering footprint PESD3V3L1UA (SOD323/SC-76)
5 2.9 1.5 (2x) solder lands solder resist occupied area 2.75 1.2 (2x) Dimensions in mm preferred transport direction during soldering
sod323_fw
Fig 11. Wave soldering footprint PESD3V3L1UA (SOD323/SC-76)
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
9 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
2.15 1.1 solder lands solder resist 1.2 0.5 0.6 (2x) (2x) solder paste occupied area 0.7 (2x) 0.8 (2x) Dimensions in mm
sod523_fr
Reflow soldering is the only recommended soldering method.
Fig 12. Reflow soldering footprint PESD3V3L1UB (SOD523/SC-79)
1.3 0.7 R0.05 (8x)
solder lands solder resist solder paste occupied area 0.3 (2x) 0.4 (2x)
sod882_fr
0.9
0.6 0.7 (2x) (2x)
Dimensions in mm
Reflow soldering is the only recommended soldering method.
Fig 13. Reflow soldering footprint PESD3V3L1UL (SOD882)
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
10 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
12. Revision history
Table 11. Revision history Release date 20090617 Data sheet status Product data sheet Change notice Supersedes Document ID PESD3V3L1UA_UB_UL_1
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
11 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
13. Legal information
13.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
13.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD3V3L1UA_UB_UL_1
(c) NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 -- 17 June 2009
12 of 13
NXP Semiconductors
PESD3V3L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
15. Contents
1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 17 June 2009 Document identifier: PESD3V3L1UA_UB_UL_1

▲Up To Search▲

Price & Availability of PESD3V3L1UA

	To Download PESD3V3L1UA Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .