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DMN100
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
* * * * * * * Extremely Low On-Resistance: 170m @ VGS = 4.5V High Drain Current: 1.1A Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3)
Mechanical Data
* * * * * * * *
SC-59
Case: SC-59 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.008 grams (approximate)
Drain
D
Gate
TOP VIEW
Gate Protection Diode
Source
G
TOP VIEW
S
Equivalent Circuit
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current
@TA = 25C unless otherwise specified Symbol VDSS VGSS ID Value 30 20 1.1 4.0 Units V V A
Characteristic Continuous Continuous Pulsed
Thermal Characteristics
@TA = 25C unless otherwise specified Symbol Pd RJA Tj, TSTG Value 500 250 -55 to +150 Units mW K/W C
Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Notes:
1. Pulse width 300s, duty cycle 2%. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN100
Document number: DS30049 Rev. 7 - 2
1 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated
DMN100 Electrical Characteristics
@TA = 25C unless otherwise specified Symbol BVDSS @ Tj = 25C @ Tj = 125C IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss Qg Qgs Qgd tD(ON) tD(OFF) tr tf IS ISM VSD trr Min 30 -- -- 1.0 -- 1.3 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 2.4 150 90 30 5.5 0.8 1.3 10 25 15 45 -- -- -- 35 Max -- 1.0 10 100 3.0 0.170 0.240 -- -- -- -- -- -- -- -- -- -- 0.54 4.0 1.2 -- Unit V A nA V S pF pF pF nC nC nC ns ns ns ns A A V ns Test Condition VGS = 0V, ID = 250A VDS = 24V, VGS = 0V VGS = 12V, VDS = 0V VDS = 10V, ID = 1.0mA VGS = 4.5V, ID = 0.5A VGS = 10V, ID = 1.0A VDS = 10V, ID = 0.5A VDS = 10V, VGS = 0V f = 1.0MHz VDS = 24V, ID = 1.0A, VGS = 10V
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time Turn-On Rise Time Turn-Off Fall Time SOURCE-DRAIN RATINGS (BODY DIODE) Continuous Source Current Pulse Source Current Forward Voltage Reverse Recovery Time
Notes: 4.
VDD = 10V, ID = 0.5A, VGS = 5.0V, RGEN = 50
-- -- IF = 1.0A, VGS = 0V IF = 1.0A, di/dt = 50A/s
Pulse width 300s, duty cycle 2%.
4.0
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.0
3.5 ID, DRAIN CURRENT (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 On-Region Characteristics 5
VGS = 4.5V
0.1
VGS = 10V
0.01 0
1 3 2 ID, DRAIN CURRENT (A) Fig. 2 On-Resistance vs. Drain Current
4
DMN100
Document number: DS30049 Rev. 7 - 2
2 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated
DMN100
0.30 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
4.0 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
0 50 100 150 Tj, JUNCTION TEMPERATURE (C) Fig. 3 On-Resistance vs. Junction Temperature
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 2 3 4 5 1 VGS, GATE TO SOURCE VOLTAGE (V) Fig. 4 On-Resistance vs. Gate-Source Voltage
0.25
0.20
0.15
0.10
0.05
0 -50
Ordering Information
Part Number DMN100-7-F
Notes:
(Note 5) Case SC-59 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
M11 = Product Type Marking Code YM = Date Code Marking Y = Year ex: T = 2006 M = Month ex: 9 = September
M11
Date Code Key Year Code Month Code
2006 T Jan 1 Feb 2
2007 U Mar 3 Apr 4
YM
2008 V May 5 Jun 6
2009 W Jul 7
2010 X Aug 8 Sep 9
2011 Y Oct O Nov N
2012 Z Dec D
Package Outline Dimensions
A
Dim A
TOP VIEW BC
G H K N J M
D
L
SC-59 Min Max 0.35 0.50 B 1.50 1.70 C 2.70 3.00 D 0.95 G 1.90 H 2.90 3.10 J 0.013 0.10 K 1.00 1.30 L 0.35 0.55 M 0.10 0.20 N 0.70 0.80 0 8 All Dimensions in mm
DMN100
Document number: DS30049 Rev. 7 - 2
3 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated
DMN100 Suggested Pad Layout
Y Z G C
Dimensions Value (in mm) Z 4.0 G 1.2 X 0.9 Y 1.4 C 2.6 E 0.95
X
E
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
DMN100
Document number: DS30049 Rev. 7 - 2
4 of 4 www.diodes.com
November 2007
(c) Diodes Incorporated

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