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SB3045LCT
DUAL LOW VF SCHOTTKY RECTIFIER
VOLTAGE FEATURES
* Low forward voltage drop, low power losses * High efficiency operation * In compliance with EU RoHS 2002/95/EC directives
45 Volts
CURRENT
30 Amperes
MECHANICAL DATA
Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.0655 ounces, 1.859 grams
.058(1.47) .042(1.07)
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Typ i c a l the r ma l r e s i s ta nc e Operating junction Storage temperature range per device per diode per diode SYMBOL VRRM I F(AV) I FSM RJC TJ TSTG VALUE 45 30 15 250 2 .5 -55 to + 125 -55 to + 150
O
UNIT V A A C /W
o
C C
o
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
PARAMETER Breakdown voltage SYMBOL VBR TEST CONDITIONS I R=1mA I F=15A I F=30A I F=15A I F=30A VR=60V TA=25oC TA=125oC TA=25 C TA=125oC
o
MIN. 45 -
TYP. 0.42 0.59 -
MAX. 0.53 0.72 0.50 0.67 0.4 200
UNIT V V V mA
Instantaneous forward voltage per diode (1)
VF
Reverse current per diode (2) Note : 1. Pulse test : tp < 380s, < 2% 2. Pulse test : Pulse width < 2.5ms
IR
June 15,2010-REV.02
PAGE . 1
SB3045LCT
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted)
Average Forward Current (A)
35
Junction Capacitance (pF)
Resistive or Inductive Load 30 25 20 15 10 5 0 0 25 50 75 100 125 150
10000 T J =25 oC f=1.0MHz Vsig=50mVp-p 1000
100
10 0.1
1
10
100
Case Temperature ( oC)
Reverse Voltage (V)
Figure 1. Forward Current Derating Curve
Figure 2. Typical Junction Capacitance
1000
1000
Instantaneous Forward Current (A)
T A =125 C
100
o
Instantaneous Reverse Current (mA)
100 T A =100 C 10 1 0.1 0.01 10 20 T A =25 oC
o
T A =100 oC
10
1
T A =75 C T A =25 oC
o
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2
30 40 50 60 70 80 90 100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
June 15,2010-REV.02
PAGE . 2

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