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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1414-8-252 TECHNICAL DATA FEATURES HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz HIGH GAIN G1dB=5.0 dB at 13.75 GHz to 14.5 GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Power Added Efficiency Channel Temperature Rise SYMBOL P1dB G1dB IDS1 ( Ta= 25C ) UNIT dBm dB A % C MIN. 38.0 4.0 TYP. MAX. 39.0 5.0 3.4 18 4.4 80 CONDITIONS VDS= 9V f= 13.75 to 14.5GHz add Tch (VDS X IDS + Pin - P1dB) X Rth(c-c) Recommended gate resistance(Rg) : Rg= 150 (MAX.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT mS V A V C/W MIN. -2.0 -5 TYP. 2400 -3.5 8.0 1.6 MAX. -5.0 10.4 2.5 gm VGSoff IDSS VGSO Rth(c-c) CONDITIONS VDS= 3V IDS= 4.0 A VDS= 3V IDS= 120mA VDS= 3V VGS= 0V IGS= -120A Channel to Case The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jul. 2006 TIM1414-8-252 ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage Temperature ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 10.4 60 175 -65 to +175 PACKAGE OUTLINE (2-11C1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM1414-8-252 RF PERFORMANCE Output Power (Pout) vs. Frequency Pout(dBm) VDS=9V 41 40 39 38 37 IDS3.4A Pin=34.0 dBm 13.75 14.1 14.5 Frequency(GHz) Output Power(Pout) vs. Input Power(Pin) 42 freq.=14.5GHz 41 40 39 VDS=9V IDS3.4A Pout 40 30 Pout(dBm) 37 36 35 34 33 27 29 31 33 35 37 20 add 10 0 Pin(dBm) 3 add(%) 38 TIM1414-8-252 Power Dissipation(PT) vs. Case Temperature(Tc) 60 PT(W) 30 0 0 40 80 Tc( C ) 120 160 200 4 |
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