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| CHENMKO ENTERPRISE CO.,LTD CHM2321PT SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. CURRENT 3.8 Ampere FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) (3) SC-59/SOT-346 0.95 2.7~3.1 0.95 (1) 1.7~2.1 CONSTRUCTION * P-Channel Enhancement 0.3~0.51 1.2~1.9 0.89~1.3 0.085~0.2 0.3~0.6 2.1~2.95 1G 2S CIRCUIT 3 D 0~0.1 Dimensions in millimeters SC-59/SOT-346 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise noted CHM2321PT Units VDSS VGSS Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous -20 V V 12 -3.8 ID - Pulsed PD TJ TSTG Maximum Power Dissipation Operating Temperature Range Storage Temperature Range (Note 3) A -15.2 1250 -55 to 150 -55 to 150 mW C C Note : 1. Surface Mounted on FR4 Board , t <=5sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 C/W 2005-12 RATING CHARACTERISTIC CURVES ( CHM2321PT ) Electrical Characteristics T Symbol Parameter A = 25C unless otherwise noted Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS I GSSF I GSSR Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Body Leakage VGS = 0 V, ID = -250 A VDS = -16 V, VGS = 0 V VGS = 12V,VDS = 0 V VGS = -12V, VDS = 0 V -20 -1 +100 -100 V A nA nA ON CHARACTERISTICS (Note 2) VGS(th) RDS(ON) g FS Gate Threshold Voltage Static Drain-Source On-Resistance VDS = VGS, ID =-250 A VGS=-4.5V, ID=-2.4A VGS=-2.5V, ID=-2.0A -0.4 45 65 12 -1.5 55 V m 80 S Forward Transconductance VDS =-5V, ID = -1.25A SWITCHING CHARACTERISTICS (Note 4) Qg Qgs Q tr toff tf gd Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Time Rise Time Turn-Off Time Fall Time VDS=-10V, ID=-2.4A VGS=-4.5V V DD= -10V ID = -1.0A , VGS = -1.5 V RGEN= 6 14.8 2.8 4.4 13 8 65 29 19 nC 20 12 100 45 nS ton DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Drain-Source Diode Forward Current (Note 1) -0.42 -1.2 A V Drain-Source Diode Forward Voltage IS = -1.25A , VGS = 0 V (Note 2) RATING CHARACTERISTIC CURVES ( CHM2321PT ) Typical Electrical Characteristics Figure 1. Output Characteristics 15 -VGS=4.5,3.0,2.5V 10 Figure 2. Transfer Characteristics 25 C -ID, Drain Current (A) 12 -VGS=2V 9 -ID, Drain Current (A) 8 6 6 4 3 0 0 0.5 1.0 1.5 -VGS=1.5V 2 TJ=125 C 0 -55 C 1.5 2.0 2.5 3.0 2.0 2.5 0 0.5 1.0 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 4. On-Resistance Variation with Temperature RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100 ID=-2.4A VGS=-4.5V Figure 3. Capacitance 2400 2000 1600 1200 800 400 0 0 C, Capacitance (pF) C iss C oss C rss 2 4 6 8 10 -50 0 50 100 150 200 -VDS, Drain-to-Source Voltage (V) Figure 5. Gate Threshold Variation with Temperature VTH, Normalized Gate-Source Threshold Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 ID=250A TJ, Junction Temperature( C) Figure 6. Body Diode Forward Voltage Variation with Source Current -IS, Source-drain current (A) VGS=0V 1 VDS=VGS 10 10 0 10 -25 0 25 50 75 100 125 150 -1 0.2 0.4 0.6 0.8 1.0 1.2 TJ, Junction Temperature( C) -VSD, Body Diode Forward Voltage (V) |
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