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DU28120T
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
Features
M/A-COM Products Released; RoHS Compliant
Package Outline
* * * * *
N-Channel enhancement mode device DMOS structure Lower capacitances for broadband operation High saturated output power Lower noise figure than bipolar devices
ABSOLUTE MAXIMUM RATINGS AT 25 C
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance Symbol VDS VGS IDS PD TJ TSTG JC Rating 65 20 24 269 200 -55 to +150 0.65 Units V V A W C C C/W
LETTER DIM A B MILLIMETERS MIN 24.64 18.29 21.21 12.60 6.22 3.81 5.33 5.08 3.05 2.29 4.06 6.68 .10 MAX 24.89 18.54 21.97 12.85 6.48 4.06 5.59 5.33 3.30 2.54 4.57 7.49 .15 INCHES MIN .970 .720 .835 .496 .245 .150 .210 .200 .120 .90 .160 .263 .004 MAX .980 .730 .865 .506 .255 .160 .220 .210 .130 .100 .180 .295 .006
TYPICAL DEVICE IMPEDANCE
F (MHz) 30 50 100 ZIN () 4.0 - j8.0 1.0 - j2.5 1.0 - j0.5 ZLOAD () 3.4 + j2.4 2.2 +j1.3 2.2 + j0.0
C D E F G H J K L M N
VDD = 28V, IDQ = 600mA, POUT = 120 W
ZIN is the series equivalent input impedance of the device from gate to source. ZLOAD is the optimum series equivalent load impedance as measured from drain to ground. ELECTRICAL CHARACTERISTICS AT 25C Parameter Symbol
Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance BVDSS IDSS IGSS VGS(TH) GM CISS COSS CRSS
GP
Min
65 2.0 3.0 13 60 -
Max
6.0 6.0 6.0 270 240 48 30:1
Units
V mA A V S pF pF pF dB % -
Test Conditions
VGS = 0.0 V , IDS = 3.0 mA VGS = 28.0 V , VGS = 0.0 V VGS = 20.0 V , VDS = 0.0 V VDS = 10.0 V , IDS = 600.0 mA VDS = 10.0 V , IDS = 6000.0 mA , VGS = 1.0V, 80 s Pulse VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz VDS = 28.0 V , F = 1.0 MHz
VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz VDD = 28.0 V, IDQ = 600 mA, POUT = 120.0 W F =175 MHz
D VSWR-T
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU28120T
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
Typical Broadband Performance Curves GAIN VS FREQUENCY VDD=28 V IDQ=600 mA POUT=120 W EFFICIENCY VS FREQUENCY VDD=28 V IDQ=600 mA POUT=120 W
M/A-COM Products Released; RoHS Compliant
30
70
EFFICIENCY (%)
GAIN (dB)
65
20
60
10 0 50 150 200 FREQUENCY (MHz)
55 0 25 50 100 150 175 200 FREQUENCY (MHz)
200 POWER OUTPUT (W) 150 100 50
POWER OUTPUT VS POWER INPUT VDD =28 V IDQ =50 mA
30MHz 175MHz
140 POWER OUTPUT (W) 120 100 80 60 40 20
POWER OUTPUT VS SUPPLY VOLTAGE F=175 MHz IDQ =600 mA PIN =3.0 W
100MHz
0 0.1 0.2 0.3
1
2
3
4
5
6
7
8
9
16
POWER INPUT (W)
20 25 SUPPLY VOLTAGE (V)
30
33
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
DU28120T
RF Power MOSFET Transistor 120W, 2-175MHz, 28V
TEST FIXTURE SCHEMATIC
M/A-COM Products Released; RoHS Compliant
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions * North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

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