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FDP7N50/FDPF7N50 500V N-Channel MOSFET
April 2007
FDP7N50/FDPF7N50
500V N-Channel MOSFET Features
* 7A, 500V, RDS(on) = 0.9 @VGS = 10 V * Low gate charge ( typical 12.8 nC) * Low Crss ( typical 9 pF) * Fast switching * 100% avalanche tested * Improved dv/dt capability
UniFET
Description
TM
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.
D
G GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C
(Note 2) (Note 1) (Note 1) (Note 3)
Parameter
- Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed
(Note 1)
FDP7N50
7 4.2 28
FDPF7N50
500 7* 4.2 * 28 * 30 270 7 8.9 4.5
Unit
V A A A V mJ A mJ V/ns
89 0.71 -55 to +150 300
31.3 0.25
W W/C C C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8" from Case for 5 Seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC RCS RJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient
FDP7N50
1.4 0.5 62.5
FDPF7N50
4.0 -62.5
Unit
C/W C/W C/W
(c)2007 Fairchild Semiconductor Corporation
1
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FDP7N50/FDPF7N50 REV. B
FDP7N50/FDPF7N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDP7N50 FDPF7N50
Device
FDP7N50 FDPF7N50
Package
TO-220 TO-220F
TC = 25C unless otherwise noted
Reel Size
---
Tape Width
---
Quantity
50 50
Electrical Characteristics
Symbol
Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS ISM VSD trr Qrr
NOTES:
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
Conditions
VGS = 0V, ID = 250A ID = 250A, Referenced to 25C VDS = 500V, VGS = 0V VDS = 400V, TC = 125C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V VDS = VGS, ID = 250A VGS = 10V, ID = 3.5A VDS = 40V, ID = 3.5A VDS = 25V, VGS = 0V, f = 1.0MHz
(Note 4)
Min.
500 -----3.0 ------
Typ.
-0.5 -----0.76 2.5 720 95 9 6 55 25 35 12.8 3.7 5.8
Max Units
--1 10 100 -100 5.0 0.9 -940 190 13.5 20 120 60 80 16.6 --V V/C A A nA nA V S pF pF pF ns ns ns ns nC nC nC
On Characteristics
Dynamic Characteristics
Switching Characteristics VDD = 250V, ID = 7A RG = 25
(Note 4, 5)
------(Note 4, 5)
VDS = 400V, ID = 7A VGS = 10V
--
Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 7A VGS = 0V, IS = 7A dIF/dt =100A/s
(Note 4)
------
---275 0.04
7 28 1.4 ---
A A V ns C
1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. IAS = 7A, VDD = 50V, L=10mH, RG = 25, Starting TJ = 25C 3. ISD 7A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test: Pulse width 300s, Duty Cycle 2% 5. Essentially Independent of Operating Temperature Typical Characteristics
FDP7N50/FDPF7N50 REV. B
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
20
Top : VGS 10.0 V 8.0 V 7.5 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V
Figure 2. Transfer Characteristics
10
1
ID , Drain Current [A]
15
ID, Drain Current [A]
150 C 10
0
o
10
25 C -55 C
* Note: 1. VDS = 40V 2. 250s Pulse Test
-2
o
o
5
* Notes : 1. 250s Pulse Test 2. TC = 25 C
o
10
-1
0
0
10
20
30
40
50
10
VDS, Drain-Source Voltage [V]
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
RDS(ON) [],Drain-Source On-Resistance
2.5
IDR , Reverse Drain Current [A]
10
1
2.0
VGS = 10V
1.5
1.0
VGS = 20V
10
0
150 C
o
25 C
* Notes : 1. VGS = 0V 2. 250s Pulse Test
o
0.5
* Note : TJ = 25 C
o
0.0
0
5
10
15
20
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 5. Capacitance Characteristics
12
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 100V
1000
VGS, Gate-Source Voltage [V]
10
VDS = 250V VDS = 400V
Ciss Coss
Capacitance [pF]
8
6
100
Crss
* Notes : 1. VGS = 0 V 2. f = 1 MHz
4
2
* Note : ID = 7 A
10
0 1
0
10
10
0
5
10
15
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
FDP7N50/FDPF7N50 REV. B
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation vs. Temperature
1.2
Figure 8. On-Resistance Variation vs. Temperature
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
Drain-Source On-Resistance
2.5
1.1
RDS(ON), (Normalized)
2.0
1.0
1.5
0.9
*Notes : 1. VGS = 0 V 2. ID = 250 A
1.0
Notes :
0.5
1. VGS = 10 V 2. ID = 3.5 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 9-1. Maximum Safe Operating Area - FDP7N50
Figure 9-2. Maximum Safe Operating Area - FDPF7N50
10 us
10
1
10 us
10
1
100 us 10 ms
100 us 1 ms 10 ms 100 ms DC
ID, Drain Current [A]
10
0
100 ms
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
1 ms
DC
10
0
Operation in This Area is Limited by R DS(on)
10
-1
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
10
-1
* Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-2
10
0
10
1
10
2
10
-2
10
0
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current Vs. Case Temperature
8
6
ID, Drain Current [A]
4
2
0 25
50
75
100
o
125
150
TC, Case Temperature [ C]
FDP7N50/FDPF7N50 REV. B
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Figure 11-1. Transient Thermal Response Curve - FDP7N50
10
0
D = 0 .5
ZJC(t), Thermal Response
0 .2 0 .1
10
-1
0 .0 5 0 .0 2 0 .0 1
PDM t1
* N o te s :
t2
o
1 . Z JC (t) = 1 .4 C /W M a x.
s in g le p u ls e
10
-2
2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z JC (t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve - FDPF7N50
D = 0 .5
ZJC(t), Thermal Response
10
0
0 .2 0 .1 0 .0 5
10
-1
0 .0 2 0 .0 1
PDM t1
* N o te s :
t2
o
s in g le p u ls e
10
-2 -5 -4 -3 -2
1 . Z JC (t) = 4 .0 C /W M a x. 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
10
10
10
10
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FDP7N50/FDPF7N50 REV. B
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP7N50/FDPF7N50 REV. B
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDP7N50/FDPF7N50 REV. B
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Mechanical Dimensions
TO-220
Dimensions in Millimeters
FDP7N50/FDPF7N50 REV. B
8
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FDP7N50/FDPF7N50 500V N-Channel MOSFET
Mechanical Dimensions
(Continued)
TO-220F
3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20] 4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
FDP7N50/FDPF7N50 REV. B
9
15.87 0.20
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Rev. I31
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No Identification Needed
Full Production
Obsolete
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