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| GC4210 - GC4275 TM (R) CONTROL DEVICES - HIGH SPEED PIN DIODES RoHS Compliant DESCRIPTION The GC4200 series are high speed (cathode base) PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. These devices can withstand storage temperatures from -65C to +200C and will operate over the range from -55C to +150C. All devices meet or exceed military environmental specifications of MIL-PRF-19500. The GC4200 series will operate with as little as +10 mA forward bias. This series of diodes meets RoHS requirements per EU Directive 2002/95/EC. The standard terminal finish is gold unless otherwise specified. Consult the factory if you have special requirements. APPLICATIONS 2B KEY FEATURES Available as packaged devices or as chips for hybrid applications Low Loss Suitable for application to 18Ghz High Speed Low Insertion Loss High Isolation RoHS Compliant 1 1 www.MICROSEMI.com Most of our devices are supplied with Gold plated terminations. Other terminal finishes are available on request. Consult factory for details. The GC4200 series can be used in RF circuits as an on/off element, as a switch, or as a current controlled resistor in attenuators extending over the frequency range from UHF through Ku band. Switch applications include high speed switches (ECM systems), TR switches, channel or antenna selection switches (telecommunications), duplexers (radar) and digital phase shifters (phased arrays). The GC4200 series are also used as passive and active limiters for low to moderate RF power levels. Attenuator type applications include amplitude modulators, AGC attenuators, power levelers and level set attenuators. ABSOLUTE MAXIMUM RATINGS AT 25 C (UNLESS OTHERWISE SPECIFIED) 3B APPLICATIONS/BENEFITS RF / Microwave Switching Duplexers Digital Phase Shifting Phase Array Radar Rating Maximum Leakage Current @80% of Minimum Rated VB Storage Temperature Operating Temperature Symbol IR TSTG TOP Value 0.5 -65 to +200 -55 to +150 Unit uA GC4210-GC4275 GC4210-GC4275 C C IMPORTANT: For the most current data, consult MICROSEMI's website: www.MICROSEMI.comU HU H Specifications are subject to change, consult factory for the latest information. These devices are ESD sensitive and must be handled use using ESD precautions. Copyright 2006 Rev.: 2009-02-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 1 GC4210 - GC4275 TM (R) CONTROL DEVICES - HIGH SPEED PIN DIODES RoHS Compliant . DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E Model Number 1 GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 GC4210 GC4211 GC4212 GC4213 GC4214 GC4215 GC4220 GC4221 GC4222 GC4223 GC4224 GC4225 IR=10A Vb(V) 70 70 70 70 70 70 100 100 100 100 100 100 250 250 250 250 250 250 Cj (pF) 2 @VR=10V Rs() 3 @20 mA IR=6mA/IF=10mA TL(nS) (Typ) 100 100 100 100 100 100 200 200 200 200 200 200 500 500 500 500 500 500 Thermal Resistance (C/W) www.MICROSEMI.com (Min) (Max) 0.06 0.10 0.20 0.30 0.40 0.50 0.06 0.10 0.20 0.30 0.40 0.50 0.06 0.10 0.20 0.30 0.40 0.50 (Max) 1.5 1.0 0.8 0.7 0.6 0.5 1.5 1.0 0.75 0.6 0.5 0.35 2.5 2.0 1.5 1.0 0.8 0.6 (Max) 80 70 70 60 50 40 80 70 70 60 50 40 80 70 70 60 50 40 Notes: 1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request. 2. Capacitance is measured at 1 MHz. 3. Resistance is measured AT 1 GHz using transmission loss techniques. The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and characterization is completed using a style 30 package. Diodes are available in many case styles. Each type offers performance trade-offs. The proper choice of package style depends on the end application and operating environment. Consult factory for assistance. Reverse polarity diodes (NIP) and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4300, GC4400, and GC4500 series respectively.) ELECTRICALS ELECTRICALS Copyright 2006 Rev.: 2009-02-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 2 GC4210 - GC4275 TM (R) CONTROL DEVICES - HIGH SPEED PIN DIODES RoHS Compliant RS VS IF CURVES www.MICROSEMI.com Typical RS Vs IF Curves 1000 GC4210 Series GC4220 Series 100 RS() 10 GC4270 Series 1 0.1 0.001 0.01 0.1 1 10 100 IF(mA) GRAPHS GRAPHS Copyright 2006 Rev.: 2009-02-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 3 GC4210 - GC4275 TM (R) CONTROL DEVICES - HIGH SPEED PIN DIODES RoHS Compliant PACKAGE STYLE 00 PACKAGE STYLE 30 www.MICROSEMI.com Dimensions vary by model. Consult factory for details. PACKAGE STYLE 35 PACKAGE STYLE 115 MECHANICAL MECHANICAL 50 OHM BOLT CHANNEL MODULE OTHER PACKAGE STYLES AVAILABLE ON REQUEST CONSULT FACTORY Copyright 2006 Rev.: 2009-02-19 Microsemi Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748 Page 4 |
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