View BLF3G21-6_4999472.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

BLF3G21-6
UHF power LDMOS transistor
Rev. 01 -- 25 June 2008 Product data sheet
1. Product profile
1.1 General description
6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz
Table 1. Typical class-AB RF performance IDq = 90 mA; Th = 25 C in a common source test circuit. Mode of operation CW Two-tone f (MHz) 2000 2000 PL (W) 7 6 <2 Table 2. Typical class-A RF performance IDq = 200 mA; Th = 25 C in a modified PHS test fixture. Mode of operation PHS f (MHz) 1880 to 1920 PL(AV) (W) 2 Gp (dB) 16 D (%) 20 ACPR600k (dBc) -75 Gp (dB) 12.5 15.5 15.8 D (%) 43 39 IMD3 (dB) -32 < -50 PL(1dB) (W) 7 -
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Excellent back-off linearity I Typical PHS performance at a supply voltage of 26 V and IDq of 200 mA: N Average output power = 2 W N Power gain = 16 dB N Efficiency = 20 % N ACPR600k = -75 dBc I Easy power control I Excellent ruggedness I High power gain I Excellent thermal stability I Designed for broadband operation (HF to 2200 MHz)
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
I No internal matching for broadband operation I ESD protection
1.3 Applications
I RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range I Broadcast drivers
2. Pinning information
Table 3. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1
Graphic symbol
1
3
2 3
sym112
2
[1]
Connected to flange.
3. Ordering information
Table 4. Ordering information Package Name BLF3G21-6 Description ceramic surface-mounted package; 2 leads Version SOT538A Type number
4. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 13 2.3 +200 200 Unit V V A C C
BLF3G21-6_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
2 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
5. Thermal characteristics
Table 6. Rth(j-c)
[1]
Thermal characteristics Conditions Th = 25 C; PL(AV) = 15 W
[1]
Symbol Parameter thermal resistance from junction to case
Typ Unit 10 K/W
Thermal resistance is determined under specified RF operating conditions.
6. Characteristics
Table 7. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage drain leakage current drain cut-off current gate leakage current forward transconductance feedback capacitance Conditions VDS = 10 V; ID = 13 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 6 V; VDS = 10 V VGS = 15 V; VDS = 0 V VDS = 10 V; ID = 0.5 A VGS = 0 V; VDS = 28 V; f = 1 MHz Min Typ Max Unit 65 2.0 2.6 3.0 1 V V A A V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.13 mA
1.85 2.3 0.6 1.6 0.3
140 nA S pF 2.07
drain-source on-state resistance VGS = VGS(th) + 9 V; ID = 0.5 A -
7. Application information
Table 8. Application information VDS = 26 V; Th = 25 C unless otherwise specified. Symbol Gp RLin D IMD3 Parameter power gain input return loss drain efficiency third order intermodulation distortion Conditions PL(PEP) = 6 W PL(PEP) = 6 W PL(PEP) = 6 W PL(PEP) = 6 W PL(PEP) < 2 W PL = PL(1dB) = 7 W PL = PL(1dB) = 7 W PL(AV) = 2 W PL(AV) = 2 W PL(AV) = 2 W Min 14 35 Typ 15.5 -7 39 -32 < -50 12.5 43 16 20 -75 Max -3 -29 Unit dB dB % dBc dBc dB % dB % dBc Mode of operation: Two-tone CW (100 kHz tone spacing); f = 2000 MHz; IDq = 90 mA
Mode of operation: one-tone CW; f = 2000 MHz; IDq = 90 mA Gp D Gp D ACPR600k power gain drain efficiency power gain drain efficiency adjacent channel power ratio (600 kHz)
Mode of operation: PHS; f = 1900 MHz; IDq = 200 mA
BLF3G21-6_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
3 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF3G21-6 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; f = 2200 MHz at rated load power.
15 Gp (dB) 13
001aai224
50 d (%) 40
001aai225
11
30
9
20
7
10
5 10-2
10-1
1 PL(CW) (W)
10
0 10-2
10-1
1 PL(CW) (W)
10
VDS = 26 V; IDq = 90 mA; Th = 25 C; f = 2000 MHz.
VDS = 26 V; IDq = 90 mA; Th = 25 C; f = 2000 MHz.
Fig 1.
Power gain as a function of CW load power; typical values
001aai226
Fig 2.
Drain efficiency as a function of CW load power; typical values
0
001aai227
18 Gp (dB) 16 Gp 14
D (%) 50
60
IMD (dBc) -20
40
12
30
-40
IMD3 IMD5
10 D 8
20 -60 10 IMD7
6 10-1
1 PL(PEP) (W)
0 10
-80 10-1
1 PL(PEP) (W)
10
VDS = 26 V; IDq = 90 mA; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz.
VDS = 26 V; IDq = 90 mA; Th 25 C; f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig 3.
Two-tone power gain and drain efficiency as function of peak envelope load power; typical values
Fig 4.
Two-tone intermodulation distortion as a function of peak envelope load power; typical values
BLF3G21-6_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
4 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
-10 ACPR (dB) -50
001aai228
192 kHz channel BW -ACPR300k at 192 kHz BW +ACPR300k at 192 kHz BW
25 C (pF) 20
001aai229
15 -ACPR900k at 192 kHz BW -90 Coss 5 -ACPR600k at 192 kHz BW -130 -1 -0.5 0 +ACPR600k at 192 kHz BW 0 0.5 f (MHz) 1 0 10 20 30 VDS (V) 40 Crss +ACPR900k at 192 kHz BW
10
Ciss
VDS = 26 V; IDq = 200 mA; Th 25 C; fc = 1900 MHz; PL(AV) = 2 W.
Fig 5.
ACPR performance under PHS conditions, measured in application board.
001aai230
Fig 6.
Ciss, Crss and Coss as function of drain supply voltage; typical values.
11
001aai231
10 Zi () 9
ZL () 9
XL
8 Xi 7 7
6 Ri 5 5 RL
4 1.8
1.85
1.9
1.95 f (GHz)
2
3 1.8
1.85
1.9
1.95 f (GHz)
2
VDS = 26 V; IDq = 90 mA; PL = 45 W; Th 25 C.
VDS = 26 V; IDq = 90 mA; PL = 45 W; Th 25 C.
Fig 7.
Input impedance as a function of frequency (series components); typical values
Fig 8.
Load impedance as a function of frequency (series components); typical values
BLF3G21-6_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
5 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
8. Test information
VGG
C17 R2 C20 C21 L2 C16 C18 C19
VDD
L1 R1 C6 L7 L6 C2 C3 C4 C5 C8 C9 C10 C7
C12
C13
C14
C15
output 50
C1 L3 L4 L5 L8 L9 L10 C11 L11
output 50
001aai232
Fig 9.
Class-AB test circuit for 2 GHz
BLF3G21-6_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
6 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
C17
C18 C16
C19
L2
C15 C14 C13 C12 R2 C20 C21 R1 C1 C3 C5 C6 C7 L1 C11
C2 C4
C8
C9
C10
54 mm
52 mm
001aai233
Dimensions in mm. The components are situated on one side of the copper-clad Printed-Circuit Board (PCB) with Teflon dielectric (r = 2.2); thickness = 0.51 mm. The other side is unetched and serves as a ground plane. See Table 9 for list of components.
Fig 10. Component layout for 2 GHz class-AB test circuit
BLF3G21-6_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
7 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
Table 9.
List of components (see Figure 9 and Figure 10) Description multilayer ceramic chip capacitor Tekelec variable capacitor; type 37281 multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor Tekelec variable capacitor; type 37281 multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor tantalum SMD capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor 3 turns enamelled copper wire
[2] [1] [1] [3] [1] [1] [1] [1] [1] [1] [1]
Component C1, C2, C11 C4, C10 C6 C7 C8 C9 C12 C13 C14 C15 C16 C17, C18 C19 C20 C21 L1, L2
Value 6.8 pF 0.4 pF to 2.5 pF 2.7 pF 2.0 pF 0.2 nF 0.6 pF to 4.5 pF 10 pF 51 pF 120 pF 100 nF 100 F; 63 V 10 F; 35 V 1 nF 22 pF 560 pF D = 2 mm; d = 0.8 mm; length = 3 mm 50 34.3 50 34.3 23.6 5.6 3.5 31.9 470 1 k
Remarks
L3 L3 L4 L5 L6 L7, L8 L9 L10, L11 R1 R2
[1] [2] [3]
stripline stripline stripline stripline stripline stripline stripline stripline SMD resistor SMD resistor
[3] [3] [3] [3] [3] [3] [3] [3]
(L x W) 3.5 mm x 1.5 mm (L x W) 1.0 mm x 1.5 mm (L x W) 11.0 mm x 0.8 mm (L x W) 8.0 mm x 3.0 mm (L x W) 1.5 mm x 1.0 mm (L x W) 14.4 mm x 3.0 mm (L x W) 3.5 mm x 1.5 mm (L x W) 12.0 mm x 1.9 mm
American Technical Ceramics type 100A or capacitor of same quality. American Technical Ceramics type 100B or capacitor of same quality. The striplines are on a double copper-clad Printed-Circuit Board (PCB) with Rogers 5880 dielectric (r = 2.2); thickness = 0.51 mm.
BLF3G21-6_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
8 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
9. Package outline
Ceramic surface-mounted package; 2 leads SOT538A
D
A
z2 (4x) D1 D2
3
z4 (4x) B c
1 A L
z1 (4x) H E2 E1 E
z3 (4x) 2 w1 M B M 0 2.5 scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 2.95 2.29 0.116 0.090 b 1.35 1.19 0.053 0.047 c 0.23 0.18 0.009 0.007 D 5.16 5.00 0.203 0.197 D1 4.65 4.50 0.183 0.177 D2 5.16 5.00 0.203 0.197 E 4.14 3.99 0.163 0.157 E1 3.63 3.48 0.143 0.137 E2 4.14 3.99 0.163 0.157 H 7.49 7.24 0.295 0.285 L 2.03 1.27 0.080 0.050 Q 0.10 0.00 w1 0.25 z1 0.58 0.43 z2 0.25 0.18 z3 0.97 0.81 0.038 0.032 z4 0.51 0.00 0.020 0.000 5 mm
b
Q
7 0 7 0
0.004 0.010 0.000
0.023 0.010 0.017 0.007
OUTLINE VERSION SOT538A
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 02-08-20 06-03-16
Fig 11. Package outline SOT538A
BLF3G21-6_1 (c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
9 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
10. Abbreviations
Table 10. Acronym CDMA EDGE GSM HF LDMOS PHS RF SMD UHF VSWR W-CDMA Abbreviations Description Code Division Multiple Access Enhanced Data rates for GSM Evolution Global System for Mobile communications High Frequency Laterally Diffused Metal-Oxide Semiconductor Personal Handy-phone System Radio Frequency Surface Mount Device Ultra High Frequency Voltage Standing-Wave Ratio Wideband Code Division Multiple Access
11. Revision history
Table 11. Revision history Release date 20080625 Data sheet status Product data sheet Change notice Supersedes Document ID BLF3G21-6_1
BLF3G21-6_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
10 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
12.3 Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF3G21-6_1
(c) NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 -- 25 June 2008
11 of 12
NXP Semiconductors
BLF3G21-6
UHF power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation. . . . . . . . . . 4 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 25 June 2008 Document identifier: BLF3G21-6_1

▲Up To Search▲

Price & Availability of BLF3G21-6

	To Download BLF3G21-6 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .