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IDP45E60
Fast Switching Diode
Features * 600 V diode technology * Fast recovery * Soft switching * Low reverse recovery charge * Low forward voltage * Easy paralleling * Pb-free lead plating; RoHS compliant * Halogen-free according to IEC61249-2-21 * Qualified according to JEDEC for target applications
Product Summary VRRM IF VF T jmax 600 45 1.5 175
PG-TO220-2
V A V C
Type IDP45E60
Package PG-TO220-2-2.
Ordering Code -
Marking D45E60
Pin 1 C
PIN 2 A
PIN 3 -
Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage Continous forward current
TC=25C TC=90C
Symbol VRRM IF
Value 600 71 47
Unit V A
Surge non repetitive forward current
TC=25C, tp=10 ms, sine halfwave
I FSM I FRM Ptot
162 111.5 W 187 106
Maximum repetitive forward current
TC=25C, tp limited by Tjmax, D=0.5
Power dissipation
TC=25C TC=90C
Operating and storage temperature Soldering temperature
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg TS
-55...+175 260
C C
Rev.2.4
Page 1
2009-09-28
IDP45E60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area
1)
Symbol min. RthJC RthJA RthJA -
Values typ. 35 max. 0.8 62 62 -
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Reverse leakage current
V R=600V, Tj=25C V R=600V, Tj=150C
Symbol min. IR VF -
Values typ. max.
Unit
A 1.5 1.5 50 3000 V 2 -
Forward voltage drop
IF=45A, T j=25C IF=45A, T j=150C
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air.
Rev.2.4
Page 2
2009-09-28
IDP45E60
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time
V R=400V, IF=45A, diF/dt=1000A/s, Tj=25C V R=400V, IF=45A, diF/dt=1000A/s, Tj=125C V R=400V, IF=45A, diF/dt=1000A/s, Tj=150C
Symbol min. t rr I rrm Q rr S -
Values typ. max.
Unit
ns 140 185 195 A 23 28.1 29 nC 1400 2650 2900 -
Peak reverse current
V R=400V, IF = 45A, diF/dt=1000A/s, Tj =25C V R=400V, IF =45A, diF/dt=1000A/s, T j=125C V R=400V, IF =45A, diF/dt=1000A/s, T j=150C
Reverse recovery charge
V R=400V, IF=45A, diF/dt=1000A/s, Tj=25C V R=400V, IF =45A, diF/dt=1000A/s, T j=125C V R=400V, IF =45A, diF/dt=1000A/s, T j=150C
Reverse recovery softness factor
V R=400V, IF=45A, diF/dt=1000A/s, Tj=25C V R=400V, IF=45A, diF/dt=1000A/s, Tj=125C V R=400V, IF=45A, diF/dt=1000A/s, Tj=150C
3.1 4.2 4.4
-
Rev.2.4
Page 3
2009-09-28
IDP45E60
1 Power dissipation Ptot = f (TC) parameter: Tj 175 C
195
2 Diode forward current IF = f(TC) parameter: Tj 175C
80
W A
165 150 60
P tot
135
IF
50 75 100 125 175
120 105
50
40 90 75 60 45 30 15 0 25 20 30
10
C TC
0 25
50
75
100
125
C TC
175
3 Typ. diode forward current IF = f (VF)
140
4 Typ. diode forward voltage VF = f (Tj)
2.4
A
-55C 25C 100C 150C
V
100
2
90A
80
VF
1.8 60 1.6
45A
IF
40
1.4
22,5A
20
1.2
0 0
0.5
1
1.5
V VF
2.5
1 -60
-20
20
60
100
160 C Tj
Rev.2.4
Page 4
2009-09-28
IDP45E60
5 Typ. reverse recovery time trr = f (diF/dt) parameter: V R = 400V, T j = 125C
450
6 Typ. reverse recovery charge Qrr =f(diF/dt) parameter: VR = 400V, Tj = 125 C
4000
ns
90A 45A 22.5A
nC
90A
350
300 2500 250 2000 200
Q rr
3000
trr
45A
22,5A
150
1500
100 200
300
400
500
600
700
800
A/s 1000 di F/dt
1000 200
300
400
500
600
700
800
A/s 1000 di F/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: V R = 400V, T j = 125C
35
8 Typ. reverse recovery softness factor S = f(diF /dt) parameter: VR = 400V, Tj = 125C
8
A
90A 45A 22.5A
7 6.5
90A
25
Irr
S
20
6 5.5 5
45A
15
22,5A
4.5 4
10 3.5 5 200 3 200
300
400
500
600
700
800
A/s 1000 di F/dt
300
400
500
600
700
800
A/s 1000 diF/dt
Rev.2.4
Page 5
2009-09-28
IDP45E60
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T
10 1
IDP45E60
K/W
10 0
ZthJC
10 -1
D = 0.50 10 -2 0.20 0.10 0.05 10 -3 single pulse 0.02 0.01
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Rev.2.4
Page 6
2009-09-28
IDP45E60
Package Outline: TO220-2-1
Rev.2.4
Page 7
2009-09-28
IDP45E60
Published by Infineon Technologies AG 81726 Munich, Germany 81726 Munchen, Germany (c) 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev.2.4
Page 8
2009-09-25

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