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Type
IPP034N03L G IPB034N03L G
OptiMOS 3 Power-Transistor
Features * Fast switching MOSFET for SMPS * Optimized technology for DC/DC converters * Qualified according to JEDEC for target applications * N-channel, logic level * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * Avalanche rated * Pb-free plating; RoHS compliant * Halogen-free according to IEC61249-2-21 Type IPP034N03L G IPB034N03L G
1)
TM
Product Summary V DS R DS(on),max ID 30 3.4 80 V m A
Package Marking
PG-TO220-3-1 034N03L
PG-TO263-3 034N03L
Maximum ratings, at T j=25 unless otherwise specified C, Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C V GS=4.5 V, T C=25 C V GS=4.5 V, T C=100 C Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse I D,pulse I AS E AS T C=25 C T C=25 C I D=80 A, R GS=25 I D=80 A, V DS=24 V, di /dt =200 A/s, T j,max=175 C Value 80 80 80 77 400 80 70 mJ Unit A
Reverse diode dv /dt
dv /dt
6
kV/s
Gate source voltage
1)
V GS
20
V
J-STD20 and JESD22
Rev. 2.0
page 1
2010-02-19
IPP034N03L G IPB034N03L G
Maximum ratings, at T j=25 unless otherwise specified C, Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 C Value 94 -55 ... 175 55/175/56 Unit W C
Parameter
Symbol Conditions min.
Values typ. max.
Unit
Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm cooling area4) Electrical characteristics, at T j=25 unless otherwise specified C, Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 A V DS=30 V, V GS=0 V, T j=25 C V DS=30 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance
5)
-
-
1.6 62 40
K/W
30 1 -
0.1
2.2 1
V
A
-
10 10 3.8 2.8 1.6 100
100 100 4.7 3.4 S nA m
I GSS R DS(on)
V GS=20 V, V DS=0 V V GS=4.5 V, I D=30 A V GS=10 V, I D=30 A
Gate resistance Transconductance
2) 3) 4)
RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A
50
See figure 3 for more detailed information See figure 13 for more detailed information
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Measured from drain tab to source pin
5)
Rev. 2.0
page 2
2010-02-19
IPP034N03L G IPB034N03L G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Gate charge total Q gs Q g(th) Q gd Q sw Qg V plateau Qg V DD=15 V, I D=30 A, V GS=0 to 10 V V DS=0.1 V, V GS=0 to 4.5 V V DD=15 V, V GS=0 V V DD=15 V, I D=30 A, V GS=0 to 4.5 V 12 6.3 5.6 11 25 2.9 51 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=15 V, V GS=10 V, I D=30 A, R G=1.6 V GS=0 V, V DS=15 V, f =1 MHz 4000 1400 81 9.2 6.4 35 5.4 5300 1900 ns pF Values typ. max. Unit
Gate charge total, sync. FET Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage
Q g(sync) Q oss
-
21 37
-
nC
IS T C=25 C I S,pulse V SD V GS=0 V, I F=30 A, T j=25 C V R=15 V, I F=I S, di F/dt =400 A/s
-
0.83
80 320 1.1
A
V
Reverse recovery charge
Q rr
-
-
20
nC
6)
See figure 16 for gate charge parameter definition
Rev. 2.0
page 3
2010-02-19
IPP034N03L G IPB034N03L G
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V
100
100
80
80
60
60
P tot [W]
40
I D [A]
40 20 20 0 0 50 100 150 200 0 0 50 100 150 200
T C [C]
T C [C]
3 Safe operating area C; I D=f(V DS); T C=25 D =0 parameter: t p
103
limited by on-state resistance 1 s
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
10
10 s
10
2
100 s DC
1
0.5
101
1 ms
Z thJC [K/W]
I D [A]
0.2 0.1
10 ms
0.1 10
0
0.05 0.02 0.01 single pulse
10-1 10-1 100 101 102
0.01
0
0
0
0
0
0
1
10-6
10-5
10-4
10-3
10-2
10-1
100
V DS [V]
t p [s]
Rev. 2.0
page 4
2010-02-19
IPP034N03L G IPB034N03L G
5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS
160
5V 4.5 V
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS
16
3V
120
10 V
4V
12
R DS(on) [m ]
3.5 V
3.2 V
I D [A]
80
8
3.5 V
3.2 V 4V
40
3V
4
10 V
4.5 V 5V 11.5 V
2.8 V
0 0 1 2 3
0 0 20 40 60 80 100
V DS [V]
I D [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
160
8 Typ. forward transconductance g fs=f(I D); T j=25 C
160
120
120
80
g fs [S]
175 C 25 C
I D [A]
80
40
40
0 0 1 2 3 4 5
0 0 20 40 60 80 100
V GS [V]
I D [A]
Rev. 2.0
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IPP034N03L G IPB034N03L G
9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=250 A
7
2.5
6 2 5
R DS(on) [m ]
98 %
3
typ
V GS(th) [V]
60 100 140 180
4
1.5
1
2 0.5 1
0 -60 -20 20
0 -60 -20 20 60 100 140 180
T j [C]
T j [C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
104
10000
1000
Ciss Coss
103
1000
100
25 C 175 98% C,
C [pF]
I F [A]
175 C 25 98% C,
102
100
Crss
10
101
10
1 5 10 15 20 25 30 0.0 0.5 1.0 1.5 2.0
0
V DS [V]
V SD [V]
Rev. 2.0
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2010-02-19
IPP034N03L G IPB034N03L G
13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start)
100
14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD
12
15 V
100 C
25 C
10
150 C
6V 24 V
8
10
V GS [V]
100 101 102 103
I AV [A]
6
4
2
1 10-1
0 0 10 20 30 40 50 60
t AV [s]
Q gate [nC]
15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA
16 Gate charge waveforms
34
V GS
32
Qg
30
V BR(DSS) [V]
28
26
V g s(th)
24
22
Q g(th) Q gs
-60 -20 20 60 100 140 180
Q sw Q gd
Q g ate
20
T j [C]
Rev. 2.0
page 7
2010-02-19
IPP034N03L G IPB034N03L G
Package Outline PG-TO220-3-1
Footprint:
Packaging:
Rev. 2.0
page 8
2010-02-19
IPP034N03L G IPB034N03L G
Package Outline PG-TO263-3
Rev. 2.0
page 9
2010-02-19
IPP034N03L G IPB034N03L G
Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). www.infineon.com Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 2.0
page 10
2010-02-19

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