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| IPD230N06N G OptiMOS(R) Power-Transistor Features * For dc/dc converters and sync. rectification * N-channel enhancement - normal level * 175 C operating temperature * Pb-free lead plating, RoHS compliant * Avalanche rated Product Summary V DS R DS(on),max ID 60 23 30 V m A Type IPD230N06N G Package Marking PG-TO252-3 230N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID TC=25 C 1) T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 30 30 120 150 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C2) I D=30 A, R GS=25 I D=30 A, V DS=48 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 100 -55 ... 175 55/175/56 Current is limited by bondwire;with an R thJC=1.5 K/W the chip is able to carry 43 A. See figure 3 Rev. 1.2 page 1 2008-09-01 IPD230N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=50 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance I GSS R DS(on) RG g fs |V DS|>2|I D|R DS(on)max, I D=30 A V GS=20 V, V DS=0 V V GS=10 V, I D=30 A 60 2.1 3 0.01 4 1 A V 1.5 75 50 K/W Values typ. max. Unit 17 1 1 18 1.6 34 100 100 23 nA m S Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 1.2 page 2 2008-09-01 IPD230N06N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) Values typ. max. Unit C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=30 A, R G=12 V GS=0 V, V DS=30 V, f =1 MHz - 860 240 64 10 25 26 24 1100 320 96 15 37 39 36 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=10 V V DD=30 V, I D=30 A, V GS=0 to 10 V - 5 2.6 9.7 12 23 5.5 9 6 3 14.6 17 31 11 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=30 A, T j=25 C V R=30 V, I F=I S, di F/dt =100 A/s - 0.91 39 48 30 120 1.3 48 60 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.2 page 3 2008-09-01 IPD230N06N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 120 30 100 25 80 20 P tot [W] 60 I D [A] 0 50 100 150 200 15 40 10 20 5 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 limited by on-state resistance 1 s 10 s 100 s 10 2 100 0.5 Z thJC [K/W] I D [A] 101 DC 0.2 1 ms 0.1 10 ms 10-1 0.05 0.02 100 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.2 page 4 2008-09-01 IPD230N06N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 80 10 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 60 70 60 7V 6.5 V 50 5V 5.5 V I D [A] 6V 40 30 5.5 V R DS(on) [m] 50 40 6V z 30 6.5 V 7V 20 20 5V 10 V 10 0 0 1 2 3 4 5 6 7 8 10 0 10 20 30 40 50 60 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 40 8 Typ. forward transconductance g fs=f(I D); T j=25 C 50 45 40 30 35 30 20 g fs [S] 175 C 25 C I D [A] 25 20 15 10 10 5 0 0 1 2 3 4 5 6 7 0 0 10 20 30 40 50 60 V GS [V] I D [A] Rev. 1.2 page 5 2008-09-01 IPD230N06N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=30 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 70 4 3.5 490A 60 50 3 49 A R DS(on) [m] 2.5 V GS(th) [V] typ 40 2 1.5 30 98 % 20 1 10 0.5 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 0 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 103 102 103 Ciss 25 C 175 C 175 C 98% C [pF] I F [A] Coss 101 102 Crss 100 25 C 98% 101 0 10 20 30 40 50 10-1 0 0.5 1 1.5 2 2.5 V DS [V] V SD [V] Rev. 1.2 page 6 2008-09-01 IPD230N06N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 102 14 Typ. gate charge V GS=f(Q gate); I D=30 A pulsed parameter: V DD 12 10 12V 30 V 48 V 25 C 8 I AV [A] 100 C 150 C V GS [V] 101 6 4 2 0 100 100 0 10 1 5 10 15 20 25 30 t AV [s] 10 2 10 3 Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 75 V GS 70 Qg V BR(DSS) [V] 65 60 V g s(th) 55 Q g (th) 50 -60 -20 20 60 100 140 180 Q sw Q gate Q gs Q gd T j [C] Rev. 1.2 page 7 2008-09-01 IPD230N06N G PG-TO252-3: Outline Rev. 1.2 page 8 2008-09-01 IPD230N06N G Rev. 1.2 page 9 2008-09-01 |
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