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PD - 97352B
IRLR8729PbF IRLU8729PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l Lead-Free l RoHS compliant
HEXFET(R) Power MOSFET
VDSS
30V
RDS(on) max
8.9m
D
Qg
10nC
S G
S D G
D-Pak I-Pak IRLR8729PbF IRLU8729PbF
G Gate D Drain S Source
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TC = 100C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 20 58f 41f 260 55 27 0.37 -55 to + 175 300 (1.6mm from case)
Units
V
A W W/C C
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
2.73 50 110
Units
C/W
gA
--- --- ---
ORDERING INFORMATION: See detailed ordering and shipping information on the last page of this data sheet.
Notes through are on page 11
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1
11/23/09
IRLR/U8729PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Parameter EAS IAR EAR Single Pulse Avalanche Energyd Avalanche CurrentA Repetitive Avalanche Energy
Min. Typ. Max. Units
30 --- --- --- 1.35 --- --- --- --- --- 91 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 21 6.0 8.9 1.8 -6.2 --- --- --- --- --- 10 2.1 1.3 4.0 2.6 4.8 6.3 1.6 10 47 11 10 1350 280 120 --- --- 8.9 V
Conditions
VGS = 0V, ID = 250A
mV/C Reference to 25C, ID = 1mA VGS = 10V, ID = 25A m 11.9 VGS = 4.5V, ID = 20A 2.35 V VDS = VGS, ID = 25A
e e
--- 1.0 150 100 -100 --- 16 --- --- --- --- --- --- 2.7 --- --- --- --- --- --- --- Typ. --- --- ---
mV/C A nA S VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 20A VDS = 15V VGS = 4.5V ID = 20A See Fig. 16 nC ns VDD = 15V, VGS = 4.5Ve ID = 20A RG = 1.8 See Fig. 14 VGS = 0V pF VDS = 15V = 1.0MHz Max. 74 20 5.5 Units mJ A mJ VDS = 16V, VGS = 0V
nC
Avalanche Characteristics
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 16 19 58f A 260 1.0 24 29 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 20A, VGS = 0V TJ = 25C, IF = 20A, VDD = 15V di/dt = 300A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRLR/U8729PbF
1000
TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V
1000
TOP VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
10
10 2.5V 1
1
60s PULSE WIDTH
2.5V 0.1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V) Tj = 25C
60s PULSE WIDTH
Tj = 175C 1 10 100
0.1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance (Normalized)
2.0 ID = 25A VGS = 10V
ID, Drain-to-Source Current (A)
100 T J = 175C 10
1.5
1.0
1
T J = 25C VDS = 15V 60s PULSE WIDTH
0.1 1 2 3 4 5 6 7 8
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
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IRLR/U8729PbF
10000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED
5.0 ID= 20A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C oss = C ds + C gd
4.0
VDS= 24V VDS= 15V
C, Capacitance (pF)
Ciss 1000 Coss
3.0
2.0
1.0
Crss 100 1 10 VDS, Drain-to-Source Voltage (V) 100
0.0 0 2 4 6 8 10 12 QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000 OPERATION IN THIS AREA LIMITED BY R DS(on) 100sec 100 1msec
100 T J = 175C 10
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1
T J = 25C
10 Tc = 25C Tj = 175C Single Pulse 1 0
10msec
VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-to-Drain Voltage (V)
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRLR/U8729PbF
60 Limited By Package 50
ID, Drain Current (A) VGS(th) , Gate threshold Voltage (V)
2.5
2.0
40 30 20 10 0 25 50 75 100 125 150 175 T C , Case Temperature (C)
1.5
ID = 25A ID = 50A
ID = 100A 1.0
0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C )
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
10
Thermal Response ( Z thJC ) C/W
1
D = 0.50 0.20 0.10 0.05 0.02 0.01
J J 1
0.1
R1 R1 2
R2 R2
C
C
Ri (C/W) i (sec) 1.251 0.000513 1.481 0.004337
1
2
0.01 SINGLE PULSE ( THERMAL RESPONSE )
C i= i/R i Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1
0.001 1E-006
1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRLR/U8729PbF
EAS , Single Pulse Avalanche Energy (mJ)
15V
300 250 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) ID 4.4A 6.5A BOTTOM 20A TOP
VDS
L
DRIVER
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
VGS
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
Fig 12c. Maximum Avalanche Energy vs. Drain Current
I AS
RD
Fig 12b. Unclamped Inductive Waveforms
RG
Current Regulator Same Type as D.U.T.
V DS V GS
D.U.T.
+
-V DD
VGS
Pulse Width 1 s Duty Factor 0.1 %
50K 12V .2F .3F
Fig 14a. Switching Time Test Circuit
D.U.T. + V - DS
VDS 90%
VGS
3mA
IG
ID
10% VGS
td(on) tr t d(off) tf
Current Sampling Resistors
Fig 13. Gate Charge Test Circuit
Fig 14b. Switching Time Waveforms
6
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IRLR/U8729PbF
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
D.U.T
+
-
-
Circuit Layout Considerations D.U.T. ISD Waveform * Low Stray Inductance * Ground Plane Reverse * Low Leakage Inductance Recovery Body Diode Forward Current Transformer + Current Current -
*
* * * * dv/dt controlled by RG DD Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
Re-Applied V Voltage +
di/dt
D.U.T. VDS Waveform
Diode Recovery dv/dt
RG
VDD
Body Diode
Forward Drop
- Inductor Curent
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
Id Vds Vgs
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
Fig 16. Gate Charge Waveform
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IRLR/U8729PbF
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Package Outline
D-Pak (TO-252AA) Part Marking Information
@Y6HQG@) UCDTADTA6IADSAS XDUCA6TT@H7G GPUA8P9@A !"# %A! ! Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP
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DIAUC@A6TT@H7GAGDI@AA6A
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96U@A8P9@ @6SA X@@FA GDI@A6 A2A! %
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6TT@H7G GPUA8P9@
AQAAvAhriyAyvrAvvAvqvphr AGrhqArrAAhyvsvphvAAurApryrry
25
Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP 96U@A8P9@ QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UARV6GDAD@9AUPAUC@ 8PITVH@SAG@W@GAPQUDPI6G @6SA X@@FA A2A! %
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRLR/U8729PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
@Y6HQG@) UCDTADTA6IADSAV ! XDUCA6TT@H7G GPUA8P9@A$%&' 6TT@H7G@9APIAXXA (A! DIAUC@A6TT@H7GAGDI@AA6A Ir)AAQAAvAhriyAyvrAvv vqvphrAGrhqArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S
,5)8 $
96U@A8P9@ @6SA A2A! X@@FA ( GDI@A6
25
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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRLR/U8729PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRLR/U8729PbF
Orderable part number IRLR8729PBF IRLR8729TRPBF IRLU8729PBF
Qualification information D-PAK Qualification level Moisture Sensitivity Level RoHS compliant I-PAK Qualification level Moisture Sensitivity Level RoHS compliant Industrial Not applicable Yes Consumer MS L1 (per JEDE C J-S T D-020D Yes
Package Type D-PAK D-PAK I-PAK
Standard Pack Form Quantity Tube/Bulk 75 Tape and 2000 Reel Tube/Bulk 75
Note
)
Qualification standards can be found at International Rectifier's web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.37mH, RG = 25, IAS = 20A. Pulse width 400s; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 50A. When mounted on 1" square PCB (FR-4 or G-10 Material).For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.11/2009
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