View PTFA260851E_4995188.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 - 2700 MHz
Description
The PTFA260851E and PTFA260851F are 85-watt LDMOS FETs designed for WiMAX power amplifier applications in the 2500 to 2700 MHz band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA260851E Package H-30248-2
PTFA260851F Package H-31248-2
WiMAX EVM and Efficiency vs. Output Power
VDS = 28 V, IDQ = 900 mA 25 20 Efficiency (%) 15 10 EVM 5 0 15 20 25 30 35 40 45 Output Power (dBm) -40 -45 2.62 GHz 2.68 GHz 2.62 -20 -25 Efficiency -30 -35 EVM (dBc)
Features
* * * Thermally-enhanced, Pb-free and RoHS-compliant packages Broadband internal matching Typical WiMAX performance at 2680 MHz, 28 V - Average output power = 16 W - Linear Gain = 14 dB - Efficiency = 22% - Error Vector Magnitude = -29 dB Typical CW performance, 2680 MHz, 28 V - Output power at P-1dB = 100 W - Efficiency = 47% Integrated ESD protection: Human Body Model, Class 2 (minimum) Excellent thermal stability, low HCI drift Capable of handling 10:1 VSWR @ 28 V, 85 W (CW) output power
*
* * *
RF Characteristics
WiMAX Measurements (not subject to production test--verified by design/characterization in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 16 W average, = 2680 MHz, modulation = 64 QAM 2/3, channel bandwidth = 3.5 MHz, sample rate = 4 MHz
Characteristic
Gain Drain Efficiency Error Vector Magnitude
Symbol
Gps
Min
-- -- --
Typ
14 22 -29
Max
-- -- --
Unit
dB % dB
D
EVM
All published data at TCASE = 25C unless otherwise indicated ESD: Electrostatic discharge sensitive device--observe handling precautions! Data Sheet 1 of 11
*See Infineon distributor for future availability.
Rev. 02.1, 2009-02-20
PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 85 W PEP, = 2680 MHz, tone spacing = 1 MHz
Characteristic
Gain Drain Efficiency Intermodulation Distortion 46.5 dBm (PEP)
Symbol
Gps
Min
13 33 --
Typ
14 36 -30
Max
-- -- -28
Unit
dB % dBc
D
IMD
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage Drain Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA VDS = 28 V, V GS = 0 V VDS = 63 V, V GS = 0 V
Symbol
V(BR)DSS IDSS IDSS RDS(on) VGS IGSS
Min
65 -- -- -- 2.0 --
Typ
-- -- -- 0.095 2.5 --
Max
-- 1.0 10.0 -- 3.0 1.0
Unit
V A A V A
On-State Resistance Operating Gate Voltage Gate Leakage Current
VGS = 10 V, V DS = 0.1 V VDS = 28 V, IDQ = 900 mA VGS = 10 V, V DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage Gate-Source Voltage Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C, 85 W CW) TSTG RJC
Symbol
VDSS VGS TJ PD
Value
65 -0.5 to +12 200 437.5 2.5 -40 to +150 0.4
Unit
V V C W W/C C C/W
Ordering Information
Type and Version
PTFA260851E PTFA260851F V1 V1
Package Type
H-30248-2 H-31248-2
Package Description
Thermally-enhanced slotted flange, single-ended Thermally-enhanced earless flange, single-ended
Marking
PTFA260851E PTFA260851F
*See Infineon distributor for future availability. Data Sheet 2 of 11 Rev. 02.1, 2009-02-20
PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Gain & Efficiency vs. Output Power
VDD = 28 V, IDQ = 900 mA, = 2.68 GHz
-20
Two-tone Broadband Performance
VDD = 28 V, IDQ = 900 mA, POUT = 42.5 W
60 50 40 30 20
Intermodulation Distortion (dBc)
16 15 14
3rd Order
-30
Gain (dB)
Gain
Drain Efficiency (%)
13 12 11 10 25 30 35 40 45 50 55
-40
5th
Efficiency
-50
10 0
7th
-60 2580 2600 2620 2640
2660 2680 2700 2720
Output Power (dBm)
Frequency (MHz)
Two-tone Broadband Performance
VDD = 28 V, IDQ = 900 mA, POUT = 42.5 W
20 50 45 35 30 25 -10 20 40
Two-tone Performance, various voltages
IDQ = 900 mA, = 2.68 GHz, tone spacing = 1 MHz
-20 -25
VDD = 26 V VDD = 28 V VDD = 32 V
Gain
Gain (dB), Return Loss (dB)
Drain Efficiency (%)
10 0
-30
Efficiency
IM3, 5, 7 (dBc)
-35 -40 -45 -50 -55 -60 -65 25 30 35
IM3 IM5
Input Return Loss
-20 -30 2590
15 10 5 0 2710
IM7
40 45 50
2610
2630
2650
2670
2690
Frequency (MHz)
Output Power (dBm )
Data Sheet
3 of 11
Rev. 02.1, 2009-02-20
PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
3-Carrier CDMA2000 Performance, various voltages
IDQ = 900 mA, = 2.68 GHz, PAR = 7 dB
40 16
Two-tone Performance, various voltages
IDQ = 900 mA, = 2.68 GHz, tone spacing = 1 MHz
17 16
50 VDD = 26 V VDD = 28 V VDD = 32 V Efficiency 40 30 Gain 20 10 0
25 30 35 40 45 50
Drain Efficiency (%)
30
VDD = 26 V VDD = 28 V VDD = 32 V
Efficiency
15
Gain (dB)
20
14
14 13 12
Gain
10 13
0 30 35 40 45 50
12
Output Power (dBm)
Output Power (dBm)
3-Carrier CDMA2000 Performance Adjacent Channel Power Ratio
VDD = 28 V, IDQ = 900 mA, = 2.68 GHz, PAR = 7 dB
-30 -40
WCDMA 3GPP Single-carrier Performance, various voltages
IDQ = 900 mA, = 2.68 GHz, PAR = 8 dB
40
VDD = 26 V VDD = 28 V VDD = 32 V
16
Drain Efficiency (%)
ACPR (dBc)
Alt2 2.5 MHz
-50 -60 -70
30
15
Adj 35 MHz
20
Gain
14
10
Efficiency
13
Alt1 2.5 MHz
-80 25 30 35 40 45 50 0 25 30 35 40 45 12
Output Power (dBm)
Output Power (dBm)
Data Sheet
4 of 11
Rev. 02.1, 2009-02-20
Gain (dB)
Gain (dB)
15
PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
WCDMA 3GPP 2-carrier Performance, various voltages
-30
WCDMA 3GPP Single-carrier Performance
IDQ = 900 mA, = 2.68 GHz, PAR = 8 dB
-30
IDQ = 900 mA, = 2.68 GHz, PAR = 8 dB, 10 MHz spacing ACPR IMD 3 32 V
Intermodulation Distortion (dBc)
-35 -40 -45 -50
ACPR (dBc), IM3U (dB)
-35 -40 -45 -50
32 V 28 V
26 V
-55 25 30 35 40 45 50
-55 25
26 V
30 35
28 V
40 45
Output Power (dBm)
Output Power (dBm)
WCDMA 3GPP 2-carrier Performance
VDD = 28 V & 32 V, IDQ = 900 mA, = 2.68 GHz, PAR = 8 dB, 10 MHz spacing
40 16
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage, series show current
1.03 0.19 A 0.56 A 0.93 A 1.39 A 2.78 A 4.17 A 5.56 A 6.95 A 8.34 A
VDD = 28 V Drain Efficiency (%)
30
VDD = 32 V Gain
Normalized Bias Voltage (V)
1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100
15
20
14
10
Efficiency
13
0 25 30 35 40 45
12
Gain (dB)
Output Power (dBm)
Case Temperature (C)
Data Sheet
5 of 11
Rev. 02.1, 2009-02-20
PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
Broadband Circuit Impedance
Frequency
D
Z Source
R 4.4 4.4 4.3 4.2 4.2 jX 3.8 3.9 4.2 4.5 4.7
Z Load
R 1.8 1.8 1.7 1.7 1.6 jX 2.5 2.7 2.9 3.2 3.3
Z Source
Z Load
MHz 2600 2620 2650 2680
G S
2700
R -->
Z0 = 50
RD G E NE RAT O
- WAV ELE NGTH S T OW A
Z Load
2700 MHz 2600 MHz
0.0
0 .1
0.1
0.2
0.3
0.4
See next page for circuit information
Data Sheet
AD TOW ARD LO
6 of 11
Rev. 02.1, 2009-02-20
0.5
0. 2
Z Source
2700 MHz 2600 MHz
PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
Reference Circuit
C1 0.001F R2 1.3K V R1 1.2K V
QQ1 LM7805 VDD
Q1 BCP56 C2 0.001F R3 2K V C3 0.001F R4 2K V R5 5.1K V C4 10F 35V
R6 10 V C5 0.01F R7 5.1K V C6 4.5pF
L1 VDD C9 4.5pF R8 10 V C10 1F C11 0.01F C12 10F 50V
l7
l8
DUT C18 4.5pF
l6
C7 4.5pF
RF_IN
l1
l2
l3
l4
l5
C8 1.5pF
l10
l11
l12
l13
C17 0.1pF
l14
RF_OUT
l9
L2
a260851ef_bd_2-1-08
C13 4.5pF
C14 1F
C15 0.01F
C16 10F 50V
Reference circuit schematic for = 2650 MHz
Circuit Assembly Information
DUT PCB PTFA260851E or PTFA260851F 0.76 mm [.030"] thick, r = 4.5 LDMOS Transistor TMM4 2 oz. copper
Microstrip
Electrical Characteristics at 2650 MHz1
0.121 0.135 0.021 0.028 0.079 0.008 0.272 0.278 0.278 0.060 0.113 0.048 0.095 0.070 , 46.9 , 40.5 , 40.5 , 14.7 , 8.3 , 57.9 , 57.9 , 49.3 , 49.3 , 5.2 , 5.2 / 49.3 , 49.3 , 49.3 , 49.3
Dimensions: L x W ( mm) Dimensions: L x W (in.)
7.42 x 1.52 8.20 x 1.93 1.27 x 1.93 1.60 x 7.54 4.37 x 14.66 0.51 x 1.04 16.79 x 1.04 16.89 x 1.40 16.89 x 1.40 3.28 x 24.36 6.73 x 24.36 / 1.40 2.97 x 1.40 5.84 x 1.40 4.29 x 1.40 0.292 0.323 0.050 0.063 0.172 0.020 0.661 0.665 0.665 0.129 0.265 0.117 0.230 0.169 x 0.060 x 0.076 x 0.076 x 0.297 x 0.577 x 0.041 x 0.041 x 0.055 x 0.055 x 0.959 x 0.959 / 0.055 x 0.055 x 0.055 x 0.055
l1 l2 l3 l4 l5 l6 l7 l8 l9 l10 l11 (taper) l12 l13 l14
Data Sheet
1Electrical characteristics are rounded.
7 of 11
Rev. 02.1, 2009-02-20
PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
R5 C5 R4 C4
R3
QQ1 C1 LM
VDD
C9
C3 C2 R1 R2 C10 L1 C12 C11 C18 C17 C16 L2 C14 C15
R6 R7 C6
Q1
VDD
RF_IN
C7 C8
R8
RF_OUT VDD
C13
a260851ef _cd_1-3-08
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3 C4 C5, C11, C15 C6, C7, C9, C13, C18 C8 C10, C14 C12, C16 C17 L1, L2 Q1 QQ1 R1 R2 R3 R4 R5, R7 R6, R8
Description
Capacitor, 0.001 F Tantalum capacitor, 10 F, 35 V Capacitor, 0.01 F Ceramic capacitor, 4.5 pF Ceramic capacitor, 1.5 pF Capacitor, 1 F Tantalum capacitor, 10 F, 50 V Ceramic capacitor, 0.1 pF Ferrite, 8.9 mm Transistor Voltage regulator Chip resistor 1.2 k-ohms Chip resistor 1.3 k-ohms Chip resistor 2 k-ohms Potentiometer 2 k-ohms Chip resistor 5.1 k-ohms Chip resistor 10 ohms
Suggested Manufacturer
Digi-Key Digi-Key ATC ATC ATC ATC Garrett Electronics ATC Elna Magnetics Infineon Technologies National Semiconductor Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key Digi-Key
P/N or Comment
PCC1772CT-ND 399-1655-2-ND 200B 103 100B 4R5 100B 1R5 920C105 TPSE106K050R0400 100A 0R1 BDS 4.6/3/8.9-4S2 BCP56 LM7805 P1.2KGCT-ND P1.3KGCT-ND P2KECT-ND 3224W-202ETR-ND P5.1KECT-ND P10ECT-ND
*Gerber Files for this circuit available on request Data Sheet 8 of 11 Rev. 02.1, 2009-02-20
PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-30248-2
(45 X 2.72 [.107])
C L
D
FLANGE 9.78 [.385] LID 9.40+0.10 -0.15 19.43 0.51 [.370+.004 ] -.006 [.765.020]
4.830.51 [.190.020]
S
C L
G
2X 12.70 [.500] 27.94 [1.100] 19.810.20 [.780.008]
C L
2X R1.63 [R.064] 4X R1.52 [R.060]
1.02 [.040]
SPH 1.57 [.062] 3.610.38 [.142.015]
0.0381 [.0015]
-A34.04 [1.340]
248c s s - 0248- _po_9- - 8 - eh3 a : 2 F0
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
9 of 11
Rev. 02.1, 2009-02-20
PTFA260851E PTFA260851F
Confidential, Limited Internal Distribution
Package Outline Specifications Package H-31248-2
( 45 X 2.72 [.107]) 2X 4.830.51 [.190.020]
C L
D
LID 9.40 -0.15 [.370+.004 ] -.006 FLANGE 9.78 [.385]
+0.10
C L
19.430.51 [.765.020]
4X R0.508 +0.381 -0.127 [R.020+.015 ] -.005 2X 12.70 [.500]
G
19.810.20 [.780.008] SPH 1.57 [.062]
C L
1.02 [.040]
0.0381 [.0015] -A-
S
3.610.38 [.142.015]
20.57 [.810]
248-cases:h- 31248- 2_po
Diagram Notes--unless otherwise specified: 1. 2. 3. 4. 5. 6. Lead thickness: 0.10 +0.051/-0.025 [.004 +.002/-.001]. All tolerances 0.127 [.005] unless specified otherwise. Pins: D = drain, S = source, G = gate. Interpret dimensions and tolerances per ASME Y14.5M-1994. Primary dimensions are mm. Alternate dimensions are inches. Gold plating thickness: S - flange: 2.54 micron [100 microinch] (min) D, G - leads: 1.14 micron 0.38 micron [45 microinch 15 microinch] Find the latest and most complete information about products and packaging at the Infineon Internet page http://www.infineon.com/products
Data Sheet
10 of 11
Rev. 02.1, 2009-02-20
PTFA260851E/F Confidential, Limited Internal Distribution Revision History: 2009-02-20 2006-07-21, Preliminary Data Sheet Previous Version: Page 6, 7 1 8 Subjects (major changes since last revision) Add impedance and circuit information. Increase bandwidth from 2620 - 2680 to 2500 - 2700. Fixed typing error
Data Sheet
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: highpowerRF@infineon.com To request other information, contact us at: +1 877 465 3667 (1-877-GO-LDMOS) USA or +1 408 776 0600 International
GOLDMOS (R) is a registered trademark of Infineon Technologies AG.
Edition 2009-02-20 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com/rfpower). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Data Sheet 11 of 11 Rev. 02.1, 2009-02-20

▲Up To Search▲

Price & Availability of PTFA260851E

	To Download PTFA260851E Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .