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SB2060LCT DUAL LOW VF SCHOTTKY RECTIFIER VOLTAGE FEATURES * Low forward voltage drop, low power losses * High efficiency operation 0.624(15.87) 0.548(13.93) 60 Volts CURRENT 20 Amperes 0.419(10.66) 0.387(9.85) 0.139(3.55) MIN. 0.196(5.00) 0.163(4.16) 0.054(1.39) 0.045(1.15) * In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : TO-220AB, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Weight: 0.0655 ounces, 1.859 grams 0.177(4.5) MAX. 0.058(1.47) 0.042(1.07) 0.038(0.96) 0.019(0.50) 0.50(12.7)MIN. 0.115(2.92) 0.080(2.03) 0.025(0.65)MAX. 0.100(2.54) 0.100(2.54) MAXIMUM RATINGS(TA=25oC unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig.4) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load per diode Typ i c a l the r ma l r e s i s ta nc e Operating junction Storage temperature range per device per diode per diode SYMBOL VRRM I F(AV) I FSM RJC TJ TSTG VALUE 60 20 10 145 2 .5 -55 to + 125 -55 to + 150 O UNIT V A A C/W o C o C ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted) PARAMETER Breakdown voltage SYMBOL VBR TEST CONDITIONS I R=1mA I F=5A I F=10A I F=5A I F=10A VR=60V TJ=25oC TJ=125oC TJ=25oC TJ=100oC MIN. 64 TYP. 68 0.44 0.51 MAX. 0.51 0.60 0.44 0.56 0.5 20 UNIT V V V mA Instantaneous forward voltage per diode (1) VF Reverse current per diode (2) IR Note.1.Pulse test : 380s pulse width, 1% duty cycle 2.Pulse test : Pulse width < 2.5ms September 14,2010-REV.05 PAGE . 1 SB2060LCT 100 100 IF, Forward Current (A) IR,Reverse Current (mA) TJ = 125C 10 TJ = 100C 1 TJ = 100C 10 TJ = 125C 1 TJ = 25C 0.1 TJ = 25C TJ = 75C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.01 20 40 60 80 100 VF, Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig.1 Typical Forward Characteristics Per Diode 10000 12.00 Fig.2 Typical Reverse Characteristics Per Diode CJ, Junction Capacitance (pF) IF, Average Forward Current (A) 10.00 8.00 6.00 4.00 2.00 0.00 1000 100 10 0.1 1 10 100 0 25 50 75 100 125 150 VR, Reverse Bias Voltage (V) TC, Case Temperature (C) Fig.3 Typical Junction Capacitance Per Diode Fig.4 Forward Current Derating Curve Per Diode September 14,2010-REV.05 PAGE . 2 |
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