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Preliminary Technical Information
Depletion Mode MOSFET
IXTY08N50D2 IXTA08N50D2 IXTP08N50D2
VDSX ID(on)
RDS(on)
= >
500V 800mA 4.6
N-Channel
TO-252 (IXTY)
G S
D (Tab)
Symbol VDSX VGSX VGSM PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C Continuous Transient TC = 25C
Maximum Ratings 500 20 30 60 - 55 ... +150 150 - 55 ... +150 V V V W C C C C C Nm/lb.in. g g g
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-252 TO-263 TO-220
300 260 1.13 / 10 0.35 2.50 3.00
G
DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features * Normally ON Mode * International Standard Packages * Molding Epoxies Meet UL 94 V-0 Flammability Classification V - 4.0 V Advantages * Easy to Mount * Space Savings * High Power Density Applications * * * * * * Audio Amplifiers Start-up Circuits Protection Circuits Ramp Generators Current Regulators Active Loads
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSX VGS(off) IGSX IDSX(off) RDS(on) ID(on) VGS = - 5V, ID = 25A VDS = 25V, ID = 25A VGS = 20V, VDS = 0V VDS = VDSX, VGS= - 5V VGS = 0V, ID = 400mA, Note 1 VGS = 0V, VDS = 25V, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 500 - 2.0
50 nA 1 A 10 A 4.6 800 mA
(c) 2009 IXYS CORPORATION, All Rights Reserved
DS100178A(8/09)
IXTY08N50D2
Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS TO-220 VGS = 5V, VDS = 250V, ID = 400mA Resistive Switching Times VGS = 5V, VDS = 250V, ID = 400mA RG = 10 (External) VGS = -10V, VDS = 25V, f = 1MHz VDS = 30V, ID = 400mA, Note 1 Characteristic Values Min. Typ. Max. 340 570 312 35 11 28 54 35 52 12.7 1.2 7.3 0.50 mS pF pF pF ns ns ns ns nC nC nC 2.08 C/W C/W
A A1 A2 b b1 b2 c c1 Dim.
IXTA08N50D2 IXTP08N50D2
TO-252 AA (IXTY) Outline
1. 2. 3. 4.
Gate Drain Source Drain Bottom Side
Millimeter Min. Max. 2.19 0.89 0 0.64 0.76 5.21 0.46 0.46 5.97 4.32 6.35 4.32 2.38 1.14 0.13 0.89 1.14 5.46 0.58 0.58 6.22 5.21 6.73 5.21
Inches Min. Max. 0.086 0.035 0 0.025 0.030 0.205 0.018 0.018 0.235 0.170 0.250 0.170 0.094 0.045 0.005 0.035 0.045 0.215 0.023 0.023 0.245 0.205 0.265 0.205
Safe-Operating-Area Specification Symbol SOA Test Conditions VDS = 400V, ID = 90mA, TC = 75C, Tp = 5s Characteristic Values Min. Typ. Max. 36 W
D D1 E E1 e e1 H L
2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.64 0.89 2.54 1.02 1.27 2.92
0.090 BSC 0.180 BSC 0.370 0.020 0.025 0.035 0.100 0.410 0.040 0.040 0.050 0.115
Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) VSD trr IRM QRM IF = 800mA, VGS = -10V, Note 1 IF = 800mA, -di/dt = 100A/s VR = 100V, VGS = -10V
Characteristic Values Min. Typ. Max. 0.8 400 5.2 1.04 1.3 V ns A C
L1 L2 L3
TO-220 (IXTP) Outline
Note 1. Pulse test, t 300s, duty cycle, d 2%. TO-263 (IXTA) Outline
Dim. A b b2 c c2 D D1 E 1. 2. 3. 4. Gate Drain Source Drain E1 e L L1 L2 L3 Millimeter Min. Max. 4.06 0.51 1.14 0.40 1.14 8.64 8.00 9.65 6.22 2.54 14.61 2.29 1.02 1.27 4.83 0.99 1.40 0.74 1.40 9.65 8.89 10.41 8.13 BSC 15.88 2.79 1.40 1.78 Inches Min. Max. .160 .020 .045 .016 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 .190 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070
Pins:
1 - Gate 3 - Source
2 - Drain 4 - Drain
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2
IXTY08N50D2 IXTA08N50D2 IXTP08N50D2
Fig. 2. Extended Output Characteristics Fig. 1. Output Characteristics @ T J = 25C
0.8 0.7 0.6 VGS = 5V 3V 2V 1V 4.5 4.0 3.5 3.0 2V
@ T J = 25C
VGS = 5V 3V
ID - Amperes
ID - Amperes
0.5 0V 0.4 0.3 -1V 0.2 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -2V
2.5 2.0 1.5 1.0
1V
0V
-1V 0.5 0.0 0 5 10 15 -2V 20 25 30
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
0.8 0.7 0.6 0V VGS = 5V 2V 1V
1E+00
Fig. 4. Drain Current @ T J = 25C
VGS = - 2.50V
1E-01
- 2.25V
1E-02
- 3.00V - 3.25V
ID - Amperes
0.4 0.3 0.2 0.1
-1V
ID - Amperes
0.5
1E-03
- 3.50V - 3.75V
1E-04
-2V -3V
1E-05
- 4.00V
0.0 0 1 2 3 4 5 6
1E-06
0
100
200
300
400
500
600
VDS - Volts
VDS - Volts
Fig. 5. Drain Current @ T J = 100C
1.E+00
Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+08
VDS = 350V - 100V
VGS = -2.75V
1.E-01
1.E+07
ID - Amperes
1.E-02
-3.25V -3.50V
R O - Ohms
-3.00V
1.E+06
TJ = 25C
1.E-03
-3.75V
1.E+05
TJ = 100C
-4.00V
1.E-04
0
100
200
300
400
500
600
1.E+04 -4.2
-4.0
-3.8
-3.6
-3.4
-3.2
-3.0
-2.8
-2.6
-2.4
VDS - Volts
VGS - Volts
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXTY08N50D2
IXTA08N50D2 IXTP08N50D2
Fig. 7. Normalized RDS(on) vs. Junction Temperature
2.6 VGS = 0V 2.2 I D = 0.4A 2.5 3.0
Fig. 8. RDS(on) Normalized to ID = 0.4A Value vs. Drain Current
VGS = 0V 5V - - - -
R DS(on) - Normalized
1.8
R DS(on) - Normalized
2.0
1.4
TJ = 125C
1.5
1.0
0.6
1.0 TJ = 25C
0.2 -50 -25 0 25 50 75 100 125 150
0.5 0.0 0.4 0.8 1.2 1.6 2.0 2.4
TJ - Degrees Centigrade
ID - Amperes
Fig. 9. Input Admittance
3.0 VDS = 30V 2.5 1.4 2.0 1.2 1.0 0.8 0.6 0.4 0.5 0.2 0.0 -3.5 0.0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 0.0 0.5 1.8 1.6 VDS = 30V
Fig. 10. Transconductance
TJ = - 40C
25C 125C
1.5 TJ = 125C 25C - 40C
1.0
g f s - Siemens
ID - Amperes
1.0
1.5
2.0
2.5
3.0
VGS - Volts
ID - Amperes
Fig. 11. Breakdown and Threshold Voltages vs. Junction Temperature
1.3 3.2 2.8 VGS = -10V
Fig. 12. Forward Voltage Drop of Intrinsic Diode
BV / VGS(off) - Normalized
1.2
VGS(off) @ VDS = 25V
2.4
1.1 BVDSX @ VGS = - 5V 1.0
IS - Amperes
2.0 1.6 1.2 0.8 TJ = 125C TJ = 25C
0.9 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9
TJ - Degrees Centigrade
VSD - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY08N50D2 IXTA08N50D2 IXTP08N50D2
Fig. 13. Capacitance
1,000 5 4 Ciss 100 Coss 3 2 VDS = 250V I D = 400mA I G = 1mA
Fig. 14. Gate Charge
Capacitance - PicoFarads
VGS - Volts
1 0 -1 -2
10 Crss
-3 -4 -5
f = 1 MHz
1 0 5 10 15 20 25 30 35 40
0
2
4
6
8
10
12
14
VDS - Volts
QG - NanoCoulombs
Fig. 15. Forward-Bias Safe Operating Area @ T C = 25C
10.00 RDS(on) Limit 25s 100s 1.00 1.00 1ms 10ms 100ms DC TJ = 150C TC = 25C Single Pulse 0.01 10 100 1,000 0.01 10 10.00
Fig. 16. Forward-Bias Safe Operating Area @ T C = 75C
RDS(on) Limit 25s 100s
ID - Amperes
ID - Amperes
1ms 10ms 100ms DC TJ = 150C TC = 75C Single Pulse 100 1,000
0.10
0.10
VDS - Volts
VDS - Volts
Fig. 17. Maximum Transient Thermal Impedance
10.0
Z (th)JC - C / W
1.0
0.1 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_08N50D2(1C)8-14-09

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