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Datasheet File OCR Text: |
SEMiX252GB126HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE 20 V Tj = 125 C VCES 1200 V VGES tpsc Tj = 150 C Tc = 25 C Tc = 80 C 1200 242 170 150 300 -20 ... 20 10 -40 ... 150 Tc = 25 C Tc = 80 C 228 158 150 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 300 1000 -40 ... 150 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R)2s Trench IGBT Modules SEMiX252GB126HDs Tj Inverse diode IF IFnom IFRM IFSM Tj Module It(RMS) Tstg Visol Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Tj = 150 C Typical Applications * AC inverter drives * UPS * Electronic Welding Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) Rth(j-s) per IGBT per IGBT IC = 150 A VGE = 15 V chiplevel Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C VGE = 15 V VGE=VCE, IC = 6 mA VGE = 0 V VCE = 1200 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 600 V IC = 150 A Tj = 125 C RG on = 3 RG off = 3 Tj = 25 C Tj = 125 C f = 1 MHz f = 1 MHz f = 1 MHz 10.7 0.56 0.48 1200 5.00 300 45 20 570 110 21 0.15 Tj = 25 C Tj = 125 C 5 1.7 2.00 1 0.9 4.7 7.3 5.8 0.1 2.1 2.45 1.2 1.1 6.0 9.0 6.5 0.3 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W K/W Remarks * Case temperatur limited to TC=125C max. * Not for new design Conditions min. typ. max. Unit GB (c) by SEMIKRON Rev. 19 - 02.12.2008 1 SEMiX252GB126HDs Characteristics Symbol Conditions Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C Tj = 25 C Tj = 125 C IF = 150 A Tj = 125 C di/dtoff = 4600 A/s T = 125 C j VGE = -15 V Tj = 125 C VCC = 600 V per diode per diode 18 res., terminal-chip per module to heat sink (M5) to terminals (M6) 3 2.5 TC = 25 C TC = 125 C 0.7 1 0.045 5 5 250 0,493 5% 3550 2% 0.9 0.7 3.3 4.7 min. typ. 1.6 1.6 1 0.8 4.0 5.3 260 43 18 max. 1.8 1.8 1.1 0.9 4.7 6.0 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 150 A VGE = 0 V chiplevel VF0 rF IRRM SEMiX(R)2s Trench IGBT Modules SEMiX252GB126HDs Qrr Err Rth(j-c) Rth(j-s) Module LCE RCC'+EE' Rth(c-s) Ms Mt w 0.24 K/W K/W nH m m K/W Nm Nm Nm g Preliminary Data Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * High short circuit capability * UL recognised file no. E63532 Typical Applications * AC inverter drives * UPS * Electronic Welding Temperature sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; k K Remarks * Case temperatur limited to TC=125C max. * Not for new design GB 2 Rev. 19 - 02.12.2008 (c) by SEMIKRON SEMiX252GB126HDs Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic (c) by SEMIKRON Rev. 19 - 02.12.2008 3 SEMiX252GB126HDs Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 Rev. 19 - 02.12.2008 (c) by SEMIKRON SEMiX252GB126HDs SEMiX 2s GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. (c) by SEMIKRON Rev. 19 - 02.12.2008 5 |
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