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| TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DEVICES LEVELS 2N7225 2N7225U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Drain - Source Voltage Gate - Source Voltage Continuous Drain Current TC = +25C Continuous Drain Current TC = +100C Max. Power Dissipation TC = +25C Drain to Source On State Resistance Operating & Storage Temperature Note: (1) Derated Linearly by 1.2 W/C for TC > +25C (2) VGS = 10Vdc, ID = 17A ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc Gate-Source Voltage (Threshold) VDS VGS, ID = 0.25mA VDS VGS, ID = 0.25mA, Tj = +125C VDS VGS, ID = 0.25mA, Tj = -55C Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C Drain Current VGS = 0V, VDS = 160V VGS = 0V, VDS = 160V, Tj = +125C Static Drain-Source On-State Resistance VGS = 10V, ID = 17A pulsed VGS = 10V, ID = 27.4A pulsed Tj = +125C VGS = 10V, ID = 17A pulsed Diode Forward Voltage VGS = 0V, ID = 27.4A pulsed Symbol V(BR)DSS VGS(th)1 VGS(th)2 VGS(th)3 IGSS1 IGSS2 IDSS1 IDSS2 rDS(on)1 rDS(on)2 rDS(on)3 VSD Min. 200 Max. Unit Vdc Symbol VDS VGS ID1 ID2 Ptl Rds(on) Top, Tstg Value 200 20 27.4 17 150 (1) 0.1 (2) -55 to +150 Unit Vdc Vdc Adc Adc W C TO-254AA 2.0 1.0 4.0 5.0 100 200 25 0.25 0.100 0.105 0.17 1.9 Vdc nAdc U-PKG (U3) TO-276AB Adc mAdc Vdc T4-LDS-0048 Rev. 1 (072806) Page 1 of 2 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/592 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge SWITCHING CHARACTERISTICS Parameters / Test Conditions Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time Diode Reverse Recovery Time ID = 27.4A, VGS = 10Vdc, Gate drive impedance = 7.5, VDD = 100Vdc di/dt 100A/s, VDD 30V, IF = 27.4A Symbol td(on) tr td(off) tf trr Min. Max. 35 190 170 130 950 Unit Symbol Qg(on) Qgs Qgd Min. Max. 115 22 60 Unit nC VGS = 10V, ID = 27.4A VDS = 50V ns ns T4-LDS-0048 Rev. 1 (072806) Page 2 of 2 |
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